Measurements of Metal Alkylamide Density during Atomic Layer Deposition Using a Mid-Infrared Light-Emitting Diode (LED) Source

2015 ◽  
Vol 69 (3) ◽  
pp. 332-341 ◽  
Author(s):  
James E. Maslar ◽  
John Hoang ◽  
William A. Kimes ◽  
Brent A. Sperling
Keyword(s):  
Atomic Layer Deposition ◽  
Light Emitting Diode ◽  
Atomic Layer ◽  
Infrared Light ◽  
Mid Infrared ◽  
Light Emitting ◽  
Layer Deposition

Optimization of Al2O3/TiO2 nanolaminate thin films prepared with different oxide ratios, for use in organic light-emitting diode encapsulation, via plasma-enhanced atomic layer deposition

2016 ◽  
Vol 18 (2) ◽  
pp. 1042-1049 ◽  
Author(s):  
Lae Ho Kim ◽  
Yong Jin Jeong ◽  
Tae Kyu An ◽  
Seonuk Park ◽  
Jin Hyuk Jang ◽  
...  
Keyword(s):  
Thin Films ◽  
Atomic Layer Deposition ◽  
Shelf Life ◽  
Light Emitting Diode ◽  
Atomic Layer ◽  
Light Emitting ◽  
Organic Light Emitting Diode ◽  
Organic Light ◽  
Layer Deposition

The shelf-life of the OLED devices passivated with and without PEALD-based films at 60 °C and 90% RH.

scholarly journals STRUCTURAL INVESTIGATION OF n-ZnO/p-GaN ULTRAVIOLET LIGHT-EMITTING DIODES GROWN BY ATOMIC LAYER DEPOSITION

2011 ◽  
Vol 04 (03) ◽  
pp. 221-224 ◽  
Author(s):  
W. C. LI ◽  
H. L. TSAI ◽  
H. C. CHEN ◽  
M. K. WU ◽  
H. R. CHEN ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Interfacial Layer ◽  
Uv Light ◽  
Light Emitting Diode ◽  
Atomic Layer ◽  
Transmission Microscopy ◽  
Light Emitting ◽  
Layer Deposition ◽  
Scanning Transmission ◽  
Zno Crystal

Electron microscopy investigation has been carried for an n- ZnO /p- GaN:Mg heterojunction ultraviolet (UV) light-emitting diode device, where the n- ZnO layer was grown by atomic layer deposition on the p-type GaN:Mg /undoped GaN structure prepared on c- Al 2 O 3 substrate. Threading dislocations, formed at the interface of the GaN/Al2O3 , disappeared at the interface of n- ZnO /p- GaN during post-deposited rapid thermal annealing and accordingly the n- ZnO layer became an almost perfect single crystal including only a few surviving dislocations. An interfacial layer was found along the (0001) interface between the n- ZnO and p- GaN:Mg layers. Scanning transmission microscopy analysis revealed that the interfacial layer was composed of ZnO crystal, which connected coherently with the neighboring n- ZnO and p- GaN:Mg . This interfacial layer contained a few atomic percents of Mg , the atoms of which had been diffused from the p- GaN:Mg . The high quality crystalline n- ZnO and the interfacial layer forming a ZnO/GaN interface states are responsible for the UV electroluminescence from the ZnO .

Enhanced Brightness and Device Lifetime of Quantum Dot Light‐Emitting Diodes by Atomic Layer Deposition

2020 ◽  
Vol 7 (12) ◽  
pp. 2000343 ◽  
Author(s):  
Gi‐Hwan Kim ◽  
Kyeongchan Noh ◽  
Jisu Han ◽  
Minsu Kim ◽  
Nuri Oh ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Quantum Dot ◽  
Light Emitting Diodes ◽  
Atomic Layer ◽  
Light Emitting ◽  
Layer Deposition ◽  
Device Lifetime
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