scholarly journals Raman Spectroscopy Provides a Powerful Diagnostic Tool for Accurate Determination of Albumin Glycation

PLoS ONE ◽  
2012 ◽  
Vol 7 (2) ◽  
pp. e32406 ◽  
Author(s):  
Narahara Chari Dingari ◽  
Gary L. Horowitz ◽  
Jeon Woong Kang ◽  
Ramachandra R. Dasari ◽  
Ishan Barman
Carbon ◽  
2017 ◽  
Vol 114 ◽  
pp. 141-159 ◽  
Author(s):  
D.I. Levshov ◽  
H.N. Tran ◽  
M. Paillet ◽  
R. Arenal ◽  
X.T. Than ◽  
...  

2017 ◽  
Vol 81 (6) ◽  
pp. 1439-1456 ◽  
Author(s):  
A. I. Apopei ◽  
G. Damian ◽  
N. Buzgar ◽  
A. Buzatu ◽  
P. Andráš ◽  
...  

AbstractNatural samples containing tetrahedrite–tennantite, bournonite–seligmannite and geocronite–jordanite from the Coranda-Hondol ore deposit, Romania, were investigated by Raman spectroscopy to determine its capability to provide estimates of solid solutions in three common and widespread sulfosalt mineral series. Raman measurements were performed on extended solid solution series (Td1 to Td97, Bnn25 to Bnn93 and Gcn24 to Gcn67, apfu). The tetrahedrite–tennantite and bournonite–seligmannite solid solution series show strong correlations between spectroscopic parameters ( position, relative intensity and shape of the Raman bands) and the Sb/(Sb+As) content ratio, while Raman spectra of geocronite–jordanite shows no evolution of Raman bands. In order to simplify the method used to estimate the Sb/(Sb+As) content ratio in tetrahedrite–tennantite and bournonite–seligmannite series, several linear equations of the first-order polynomial fit were obtained. The results are in good agreement with electron microprobe data. Moreover, a computer program was developed as an analytical tool for a fast and accurate determination of Sb/(Sb+As) content ratio by at least one spectroscopic parameter. These results indicate that Raman spectroscopy can provide direct information on the composition and structure of the tetrahedrite–tennantite and bournonite– seligmannite series.


Food Control ◽  
2015 ◽  
Vol 52 ◽  
pp. 119-125 ◽  
Author(s):  
Daniel T. Berhe ◽  
Anders J. Lawaetz ◽  
Søren B. Engelsen ◽  
Marchen S. Hviid ◽  
René Lametsch

2003 ◽  
Vol 799 ◽  
Author(s):  
James E. Maslar ◽  
Wilbur S. Hurst ◽  
Christine A. Wang ◽  
Daniel A. Shiau

ABSTRACTGaSb-based semiconductors are of interest for mid-infrared optoelectronic and high-speed electronic devices. Accurate determination of electrical properties is essential for optimizing the performance of these devices. However, electrical characterization of these semiconductors is not straightforward since semi-insulating (SI) GaSb substrates for Hall measurements are not available. In this work, the capability of Raman spectroscopy for determination of the majority carrier concentration in n-GaInAsSb epilayers was investigated. Raman spectroscopy offers the advantage of being non-contact and spatially resolved. Furthermore, the type of substrate used for the epilayer does not affect the measurement. However, for antimonide-based materials, traditionally employed Raman laser sources and detectors are not optimized for the analysis wavelength range dictated by the narrow band gap of these materials. Therefore, a near-infrared Raman spectroscopic system, optimized for antimonide-based materials, was developed.Ga0.85In0.15As0.13Sb0.87 epilayers were grown by organometallic vapor phase epitaxy with doping levels in the range 2 to 80 × 1017 cm-3, as measured by secondary ion mass spectrometry. For a particular nominal doping level, epilayers were grown both lattice matched to n-GaSb substrates and lattice-mismatched to SI GaAs substrates under nominally identical conditions. Single magnetic field Hall measurements were performed on the epilayers grown on SI GaAs substrates, while Raman spectroscopy was used to measure the carrier concentration of epilayers grown on GaSb and the corresponding SI GaAs substrates. Contrary to Hall measurements, Raman spectra indicated that the GaInAsSb epilayers grown on GaSb substrates have higher free carrier concentrations than the corresponding epilayers grown on SI GaAs substrates under nominally identical conditions. This is contrary to the assumption that for nominally identical growth conditions, the resulting carrier concentration is independent of substrate, and possible mechanisms will be discussed.


2019 ◽  
Vol 15 (1) ◽  
pp. 39-53
Author(s):  
M. P. Krasheninina ◽  
M. Yu. Medvedevskikh ◽  
E. V. Galeeva ◽  
R. R. Galeev

This paper presents the results of the identification procedure certification and subsequent quantitative determination of the active ingredients of two-component injectable medicines (active ingredient and solvent) using Raman spectroscopy. The main objective of the research was to select approaches for estimating the metrological characteristics of the measurement procedure, which include consideration of the methodological parameters and provide the metrological traceability of measurement results to SI units. According to this purpose, the GVET 176‑1‑2010 State Secondary Measurement Standard for units of mass fraction, mass (molar) concentration of components in solid and liquid substances and materials based on volumetric titration was used. The following substances were chosen as the research objects for estimating the metrological characteristics of the measurement procedure: ascorbic acid, novocaine and sodium thiosulphate. The authors of the work have demonstrated the measurement-procedure certification results, whose accurate determination was confirmed by the results of interlaboratory comparisons. The obtained results confirmed the accuracy of the identification procedure and subsequent quantitative determination, which proves its applicability for the determination of the active ingredients in two-component injectable medicines. In addition, the possibility of developing reference materials based on the medicines under study is indicated. Further development of this study may be directed at the development of an identification procedure and its certification, with subsequent quantitative determination of the active ingredients of injectable medicines having three components as well as those having a more complex composition.


2013 ◽  
Vol 32 (2) ◽  
pp. 96-103 ◽  
Author(s):  
Snežana Uskoković-Marković ◽  
Milena Jelikić-Stankov ◽  
Ivanka Holclajtner-Antunović ◽  
Predrag Đurđević

Summary In this review, Raman spectroscopy is described as a new and potentially powerful diagnostic tool in comparison to routine biochemical tests. Advanced instrumentation and new Raman spectroscopy techniques enable rapid and simultaneous identification and/or determination of several biochemical parameters, such as glucose, acetone, creatinine, urea, lipid profile, uric acid, total protein, etc, with a very low limit of detection. Raman spectroscopy could also be applied in molecule and cell characterization, as well as diagnostics of atherosclerosis in its early stage. Raman spectroscopy is nondestructive and could be applied to all kinds of samples, which simplifies the diagnostics of numerous diseases and pathologic states. Special attention is paid to literature data illustrating the application of Raman spectroscopy for transdermal glucose monitoring and cancer diagnostics.


Author(s):  
R.D. Leapman ◽  
P. Rez ◽  
D.F. Mayers

Microanalysis by EELS has been developing rapidly and though the general form of the spectrum is now understood there is a need to put the technique on a more quantitative basis (1,2). Certain aspects important for microanalysis include: (i) accurate determination of the partial cross sections, σx(α,ΔE) for core excitation when scattering lies inside collection angle a and energy range ΔE above the edge, (ii) behavior of the background intensity due to excitation of less strongly bound electrons, necessary for extrapolation beneath the signal of interest, (iii) departures from the simple hydrogenic K-edge seen in L and M losses, effecting σx and complicating microanalysis. Such problems might be approached empirically but here we describe how computation can elucidate the spectrum shape.The inelastic cross section differential with respect to energy transfer E and momentum transfer q for electrons of energy E0 and velocity v can be written as


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