scholarly journals High-Temperature-Induced Defects in Tomato (Solanum lycopersicum) Anther and Pollen Development Are Associated with Reduced Expression of B-Class Floral Patterning Genes

PLoS ONE ◽  
2016 ◽  
Vol 11 (12) ◽  
pp. e0167614 ◽  
Author(s):  
Florian Müller ◽  
Jiemeng Xu ◽  
Lieke Kristensen ◽  
Mieke Wolters-Arts ◽  
Peter F. M. de Groot ◽  
...  
Keyword(s):  
High Temperature ◽  
Solanum Lycopersicum ◽  
Pollen Development ◽  
Patterning Genes ◽  
Induced Defects

scholarly journals An Ethylene Over-Producing Mutant of Tomato (<i>Solanum lycopersicum</i>), Epinastic, Exhibits Tolerance to High Temperature Conditions

2021 ◽  
Vol 12 (04) ◽  
pp. 487-497
Author(s):  
Sridharan Jegadeesan ◽  
Etan Pressman ◽  
Avital Beery ◽  
Vikram Singh ◽  
Lázaro Eustáquio Pereira Peres ◽  
...  
Keyword(s):  
High Temperature ◽  
Solanum Lycopersicum ◽  
Temperature Conditions

Formation of Thermally Induced Defects in Silica Optical Material

2013 ◽  
Vol 853 ◽  
pp. 62-67
Author(s):  
Zhong Yin Xiao ◽  
Jian Xiang Wen ◽  
Wen Yun Luo ◽  
Wen Kai Wu ◽  
Ren Xiang Gong ◽  
...  
Keyword(s):  
High Temperature ◽  
Formation Process ◽  
Thermal History ◽  
Defect Formation ◽  
Annealing Process ◽  
Optical Material ◽  
Thermally Induced ◽  
Silica Material ◽  
Heating Treatment ◽  
Induced Defects

Characteristics of silica optical material largely depend on its thermal history. In this paper, formation of thermally induced defects in silica optical material is studied. The formation process of defect is analyzed in detail. The results show that there is an obvious difference in defect formation induced by heating treatment when the composition of silica optical material changes. Defect formation mainly displays as the produce process when the initial defects of the silica material are zero. However, defect formation expresses as the produce and annealing process when the initial defects of the silica material are not zero. The initial defect concentration can be decreased significantly when the silica material is heated in high temperature. At the same time, the new defect is also produced. These theoretic results are consistent with the previous experimental ones.

scholarly journals Melatonin Alleviates High Temperature-Induced Pollen Abortion in Solanum lycopersicum

Molecules ◽  
2018 ◽  
Vol 23 (2) ◽  
pp. 386 ◽  
Author(s):  
Zhen-Yu Qi ◽  
Kai-Xin Wang ◽  
Meng-Yu Yan ◽  
Mukesh Kanwar ◽  
Dao-Yi Li ◽  
...  
Keyword(s):  
High Temperature ◽  
Solanum Lycopersicum ◽  
Pollen Abortion

Pollen development at high temperature and role of carbon and nitrogen metabolites

2019 ◽  
Vol 42 (10) ◽  
pp. 2759-2775 ◽  
Author(s):  
James P. Santiago ◽  
Thomas D. Sharkey
Keyword(s):  
High Temperature ◽  
Pollen Development ◽  
Carbon And Nitrogen

Reverse martensitic phase transformation induced in Nb–Co multilayers by ion irradiation

1994 ◽  
Vol 9 (2) ◽  
pp. 357-361 ◽  
Author(s):  
B.X. Liu ◽  
Z.J. Zhang
Keyword(s):  
Phase Transformation ◽  
High Temperature ◽  
Solid State ◽  
Room Temperature ◽  
Ion Irradiation ◽  
Martensitic Phase ◽  
Martensitic Phase Transformation ◽  
Step Transition ◽  
Induced Defects ◽  
Irradiation Induced Defects

A reverse martensitic phase transformation was observed in Nb-enriched Nb-Co multilayers induced by room temperature 200 ke V xenon ion mixing. Further experiments revealed that this bcc-fcc transition proceeds in two steps, i.e., bcc-hcp and hcp-fcc. A crystallographic model is proposed to explain the two-step transition through shearing and sliding, which are mediated by irradiation-induced defects and strain in the films. In addition, the existence of the hcp and fcc metastable states in the Nb-Co system was confirmed by high-temperature solid state interdiffusion of the corresponding multilayers.

Process-Induced Defects in High-Purity GaAs

1982 ◽  
Vol 14 ◽  
Author(s):  
P. H. Campbell ◽  
O. Aina ◽  
B. J. Baliga ◽  
R. Ehle
Keyword(s):  
High Temperature ◽  
High Purity ◽  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Deep Levels ◽  
Schottky Contacts ◽  
High Temperature Annealing ◽  
Order Of Magnitude ◽  
Transient Spectroscopy ◽  
Induced Defects

ABSTRACTHigh temperature annealing of Si 3 N4 and SiO2 capped high purity LPE GaAs is shown to result in a reduction in the surface carrier concentration by about an order of magnitude. Au Schottky contacts made on the annealed samples were found to have severely degraded breakdown characteristics. Using deep level transient spectroscopy, deep levels at EC–.58eV, EC–.785eV were detected in the SiO2, capped samples and EC–.62eV, EC–.728eV in the Si3N4 capped Samples while none was detected in the unannealed samples.The electrical degradations are explained in terms of compensation mechanisns and depletion layer recombination-generation currents due to the deep levels.

scholarly journals Optical properties revealing annealing behavior of high-temperature He-implantation induced defects in silicon carbide

2009 ◽  
Vol 58 (5) ◽  
pp. 3302
Author(s):  
Zhang Hong-Hua ◽  
Zhang Chong-Hong ◽  
Li Bing-Sheng ◽  
Zhou Li-Hong ◽  
Yang Yi-Tao ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Optical Properties ◽  
High Temperature ◽  
Annealing Behavior ◽  
Induced Defects

scholarly journals High Temperature Has Negative Impact on Pollen Development in Chili Pepper (Capsicum annuum L.) cv. Tanjung-2

2020 ◽  
Vol 25 (1) ◽  
pp. 19-25
Author(s):  
Iriawati Iriawati ◽  
◽  
Isqim Oktaviani ◽  
Ahmad Faizal ◽  
◽  
...  
Keyword(s):  
High Temperature ◽  
Capsicum Annuum ◽  
Pollen Development ◽  
Negative Impact ◽  
Chili Pepper ◽  
Capsicum Annuum L
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