scholarly journals A novel fully automatic design approach of a 3D printed face specific mask: Proof of concept

PLoS ONE ◽  
2020 ◽  
Vol 15 (12) ◽  
pp. e0243388
Author(s):  
Eman Shaheen ◽  
Robin Willaert ◽  
Isabel Miclotte ◽  
Ruxandra Coropciuc ◽  
Michel Bila ◽  
...  
Keyword(s):  
Three Dimensional ◽  
High Volume ◽  
Subjective Assessment ◽  
Computer Assisted ◽  
International Regulations ◽  
High Volume Production ◽  
The Face ◽  
Volume Production ◽  
Fully Automatic ◽  
The Individual

The use of high quality facemasks is indispensable in the light of the current COVID pandemic. This study proposes a fully automatic technique to design a face specific mask. Through the use of stereophotogrammetry, computer-assisted design and three-dimensional (3D) printing, we describe a protocol for manufacturing facemasks perfectly adapted to the individual face characteristics. The face specific mask was compared to a universal design of facemask and different filter container’s designs were merged with the mask body. Subjective assessment of the face specific mask demonstrated tight closure at the nose, mouth and chin area, and permits the normal wearing of glasses. A screw-drive locking system is advised for easy assembly of the filter components. Automation of the process enables high volume production but still allows sufficient designer interaction to answer specific requirements. The suggested protocol can be used to provide more comfortable, effective and sustainable solution compared to a single use, standardized mask. Subsequent research on printing materials, sterilization technique and compliance with international regulations will facilitate the introduction of the face specific mask in clinical practice as well as for general use.

Advanced warpage characterization for FOWLP

2013 ◽  
Vol 2013 (1) ◽  
pp. 000641-000646
Author(s):  
Jorge Teixeira ◽  
Mário Ribeiro ◽  
Nélson Pinho
Keyword(s):  
Three Dimensional ◽  
High Volume ◽  
Thermomechanical Properties ◽  
Silicon Wafers ◽  
Wafer Level ◽  
Height Range ◽  
High Volume Production ◽  
Volume Production ◽  
The Mean ◽  
Processing Steps

Current standards for silicon wafers shape characterization use simple metrics. Warpage and bow are computed as the mean surface wafer height range or the mean surface wafer center height, respectively [1]. These metrics are valid for silicon wafers because of their homogenous and linear thermomechanical properties [2]. In fan-out wafer level package (FO-WLP), embedded Wafer Level Ball Grid Array in specific (eWLB), the use of epoxy mold compound that works both as the physical carrier of the dies and as the base of second level connections has a major impact on the overall macroscopic behavior of the wafer, inducing shapes that do not follow a simple bended or bowed wafer, impacting wafer processability [3]. Warped wafers can affect device performance, reliability, and linewidth control in various processing steps [3]. Early detection will minimize cost and processing time. In our research, we present a solution for wafer characterization in FO-WLP by increasing the information vector that one obtains from standard automated non-contact scanning equipment. For this, we defined wafer shape and wafer ratio as the two new metrics besides warpage, creating a three dimensional vector that can be used to compare and evaluate wafers in high volume production or even single wafer analysis. This is a major improvement over previously used approaches, in which only the average warpage is considered. These metrics were determined by the developed numeric algorithm and their validity was demonstrated through the use of different production conditions, wafer constructions and production monitoring. The proposed approach requires no extra processing steps and time, as compared to conventional off-line methods. Experimental results demonstrate its feasibility and repeatability. This methodology was successfully used in the field and proved to be of high value when evaluating wafer geometrical requirements for both product development and process monitoring.

Performance Characterization of Micromachined Tunneling Infrared Detectors

2001 ◽  
Author(s):  
Olaleye Ajakaiye ◽  
Choongsoo Shin ◽  
John Grade ◽  
Thomas W. Kenny
Keyword(s):  
Infrared Detectors ◽  
State Of The Art ◽  
High Volume ◽  
Scale Production ◽  
Early Generation ◽  
High Volume Production ◽  
Volume Production ◽  
Uncooled Infrared Detectors ◽  
The Individual

Abstract The individual assembly of early generation tunneling infrared detectors required time and skill that were incompatible with high volume production and resulted in large variations in key device operating parameters. The parts of the sensor were glued together and the yield was poor. This paper describes the first successful wafer scale production of micromachined tunneling infrared detectors. The detectors produced with this process feature performance consistent with the best tunneling sensors developed so far and are suitable for use as state-of-the-art uncooled infrared detectors. The noise in these detectors is measured to be below 30 μV/rtHz with a corresponding noise equivalent power (NEP) of less than 10−8 W/rtHz.

scholarly journals Congener-specific partition properties of chlorinated paraffins evaluated with COSMOtherm and gas chromatographic retention indices

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Jort Hammer ◽  
Hidenori Matsukami ◽  
Satoshi Endo
Keyword(s):  
Chemical Properties ◽  
High Volume ◽  
Retention Indices ◽  
Chromatographic Retention ◽  
Linear Free Energy Relationship ◽  
Linear Free Energy ◽  
Chlorinated Paraffins ◽  
Gas Chromatographic Retention Indices ◽  
High Volume Production ◽  
Volume Production

AbstractChlorinated Paraffins (CPs) are high volume production chemicals and have been found in various organisms including humans and in environmental samples from remote regions. It is thus of great importance to understand the physical–chemical properties of CPs. In this study, gas chromatographic (GC) retention indexes (RIs) of 25 CP congeners were measured on various polar and nonpolar columns to investigate the relationships between the molecular structure and the partition properties. Retention measurements show that analytical standards of individual CPs often contain several stereoisomers. RI values show that chlorination pattern have a large influence on the polarity of CPs. Single Cl substitutions (–CHCl–, –CH2Cl) generally increase polarity of CPs. However, many consecutive –CHCl– units (e.g., 1,2,3,4,5,6-C11Cl6) increase polarity less than expected from the total number of –CHCl– units. Polyparameter linear free energy relationship descriptors show that polarity difference between CP congeners can be explained by the H-bond donating properties of CPs. RI values of CP congeners were predicted using the quantum chemically based prediction tool COSMOthermX. Predicted RI values correlate well with the experimental data (R2, 0.975–0.995), indicating that COSMOthermX can be used to accurately predict the retention of CP congeners on GC columns.

High Volume Production Growth of GaAs on Silicon Substrates

1986 ◽  
Vol 67 ◽  
Author(s):  
Chris R. Ito ◽  
M. Feng ◽  
V. K. Eu ◽  
H. B. Kim
Keyword(s):  
Schottky Diodes ◽  
High Volume ◽  
Wafer Surface ◽  
Silicon Substrates ◽  
Growth Technique ◽  
Wafer Thickness ◽  
Production Growth ◽  
High Volume Production ◽  
Volume Production ◽  
P Type

ABSTRACTA high-volume epitaxial reactor has been used to investigate the feasibility for the production growth of GaAs on silicon substrates. The reactor is a customized system which has a maximum capacity of 39 three-inch diameter wafers and can accommodate substrates as large as eight inches in diameter. The MOCVD material growth technique was used to grow GaAs directly on p-type, (100) silicon substrates, three and five inches in diameter. The GaAs surfaces were textured with antiphase boundaries. Double-cyrstal rocking curve measurements showed single-cyrstal GaAs with an average FWHMof 520 arc seconds measured at four points over the wafer surface. Within-wafer thickness uniformity was ± 4% with a wafer-to-wafer uniformity of ± 2%. Photoluminescence spectra showed Tour peaks at 1.500, 1.483, 1.464, and 1.440 ev. Schottky diodes were fabricated on the GaAs on silicon material.

Determination of transverse flexural and shear moduli of chopped carbon fiber tape-reinforced thermoplastic by vibration

2017 ◽  
Vol 52 (3) ◽  
pp. 395-404
Author(s):  
Xiuqi Lyu ◽  
Jun Takahashi ◽  
Yi Wan ◽  
Isamu Ohsawa
Keyword(s):  
Carbon Fiber ◽  
Beam Theory ◽  
Transversely Isotropic ◽  
High Volume ◽  
Bending Test ◽  
Thermoplastic Material ◽  
Shear Moduli ◽  
High Volume Production ◽  
Volume Production

Chopped carbon fiber tape-reinforced thermoplastic material is specifically developed for the high-volume production of lightweight automobiles. With excellent design processability and flexibility, the carbon fiber tape-reinforced thermoplastic material is manufactured by compressing large amounts of randomly oriented, pre-impregnated unidirectional tapes in a plane. Therefore, the carbon fiber tape-reinforced thermoplastic material presents transversely isotropic properties. Transverse shear effect along the thickness direction of carbon fiber tape-reinforced thermoplastic beam has a distinct influence on its flexural deformation. Accordingly, the Timoshenko beam theory combined with vibration frequencies was proposed to determine the set of transverse flexural and shear moduli. Meanwhile, the transverse flexural and shear moduli of carbon fiber tape-reinforced thermoplastic beam were finally determined by fitting all the first seven measured and calculated eigenfrequencies with the least squares criterion. In addition, the suggested thickness to length ratio for the 3-point bending test and Euler–Bernoulli model was given.

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