scholarly journals Ion Beam Sharpening of a Diamond Knife without Facet and Ripple Formation by Swinging It

2012 ◽  
Vol 10 (0) ◽  
pp. 210-215
Author(s):  
S. F. Mahmud ◽  
R. Fukuyama ◽  
S. A. Pahlovy ◽  
I. Miyamoto
2007 ◽  
Vol 19 (3) ◽  
pp. 035304 ◽  
Author(s):  
D Carbone ◽  
A Alija ◽  
O Plantevin ◽  
R Gago ◽  
S Facsko ◽  
...  

2013 ◽  
Vol 46 (2) ◽  
pp. 505-511 ◽  
Author(s):  
B. Khanbabaee ◽  
A. Biermanns ◽  
S. Facsko ◽  
J. Grenzer ◽  
U. Pietsch

This article reports on surface density variations that are accompanied by ion-beam-induced pattern formation processes on Si. The density profiles perpendicular to Si(100) surfaces were investigated after off-normal implantation with 5 keV Fe+ions at fluences ranging from 1 × 1016to 5 × 1017 ions cm−2. Ripple formation was observed for ion fluences above 1 × 1016 ions cm−2. X-ray reflectivity (XRR) revealed the formation of a nanometre subsurface layer with incorporated Fe. Using XRR, no major dependence of the surface density on the ion fluence could be found. In order to improve the surface sensitivity, extremely asymmetric X-ray diffraction was applied. Depth profiling was achieved by measuring X-ray rocking curves as a function of the decreasing incidence angle down to 0° using this noncoplanar scattering geometry. The density information was extracted from the dynamical Bragg shift of the diffraction peak caused by refraction of the X-ray beam at the air–sample interface. Simulations based on the dynamical theory of X-ray diffraction revealed a decrease of density for increasing ion fluence in a region close to the surface, caused by the amorphization and surface roughening.


Materials ◽  
2017 ◽  
Vol 10 (9) ◽  
pp. 1056 ◽  
Author(s):  
Buddhi Tilakaratne ◽  
Quark Chen ◽  
Wei-Kan Chu

1999 ◽  
Vol 5 (S2) ◽  
pp. 890-891
Author(s):  
T. Malis ◽  
P.R. Buseck ◽  
J.P. Bradley ◽  
J. Li ◽  
M. Phaneuf

There is a trend in electron microscopy towards centralization of the more sophisticated EM systems. The rationale is that the techniques associated with such instrumentation are more efficiently practiced and developed by dedicated specialists in a regional or national centre surrounded by an extensive infrastructure. A similar argument can be used for the preparation of TEM specimens, especially as the demand grows for more precise location of the thin area to be examined. A new trio of techniques - tripod polishing, ultramicrotomy, and focused ion beam (FIB) thinning - can locate the thin area to within a micron or less. In the first two, a linear feature first located via light or scanning electron microscopy can be cross-sectioned by controlled material removal via mechanical polishing or diamond knife sectioning, respectively. With FIB, feature location and material removal are carried out in-situ, first imaging with a low intensity beam, then milling trenches on either side of the feature with a high intensity beam that is decreased as the feature is approached.


2004 ◽  
Vol 849 ◽  
Author(s):  
Jonah Erlebacher ◽  
Ari-David Brown

ABSTRACTSputter rippling refers to the formation of regular surface patterns during glancing incidence energetic ion beam etching of surfaces, usually as a result of a competition between etching (from the ion beam) and capillary action (driving smoothening via surface diffusion). Many different kinds of morphologies are often observed, including ripples oriented parallel and perpendicular to the projected ion beam direction and “quantum dots” arranged in hexagonal or rectangular arrays. Theoretical analyses of ripple evolution have concentrated on the initial stages of the surface instability leading to pattern formation, and the details associated with the nonlinear mechanisms leading to amplitude saturation and pattern stabilization remain a subject of active interest. The Si(111) surface is a single component surface with isotropic surface diffusion kinetics; for these reasons, this system provides a useful probe of surface evolution without complicating effects of compositional inhomogeneities and anisotropic terrace diffusion. Our examination of the Si(111) surface indicates that step-step interactions may play an important role in the evolution of sputter ripples in this system. To argue for this conclusion, a comparison with sputter ripple evolution on Si(001) is made.


2006 ◽  
Vol 14 (6) ◽  
pp. 58-59
Author(s):  
Ron Anderson

Arecent discussion on the Microscopy Listserver on the subject of microtoming Si reminded many of us of this decades-old issue. Silicon is one of the easiest materials to prepare for TEM analysis with dozens of protocols available including chemical etching, electropolishing, mechanical polishing with and without ion milling, microcleaving, and the use of a focused ion beam instrument. The time involved in Si preparation can range from minutes to a few hours. Things become more complex if it is desired to prepare a Si semiconductor device with high specimen preparation spatial resolution i.e. prepping a prespecified, very small, structure.Now and then a technologist, often times in the biological sciences, is asked to prepare a Si TEM specimen and wonders if Si can be microtomed. The results are almost always a pile of Si dust and frequently a damaged diamond knife.


Coatings ◽  
2020 ◽  
Vol 10 (10) ◽  
pp. 949 ◽  
Author(s):  
Qian Bi ◽  
Zhili Chen ◽  
Yuzhao Liu ◽  
Li Tang ◽  
Yingxue Xi ◽  
...  

The metal impurity assisted ion beam technology has shown its uniqueness and effectiveness in the formation and precise control of nanostructures on the surface of materials. Hence, the investigation in this area is vital. The morphology evolution of self-organized nanostructures induced by Fe co-deposition assisted Ar+ ion beam sputtering at a different distance from the impurity target was investigated on sapphire, using atomic force microscopy (AFM) and X-ray photoelectron spectroscopy (XPS). We also investigated the role of metal impurities on sapphire ripple formation. Experiments were carried out at an oblique angle of incidence 65° with constant ion beam current density 487 μA/cm2 and the erosion duration of 60 min at room temperature (20 °C). The introduction of Fe impurity increased the longitudinal height and roughness of the surface nanostructures. Moreover, the amounts of Fe deposited on the surface decreased with increasing distance, and the morphology of the smooth sapphire surface demonstrated a strong distance dependence. Differences in surface morphology were attributed to changes in metal impurity concentration. With an increase of impurity target distance, island-like structures gradually evolved into continuous ripples. At the same time, the orderliness of nanostructures was enhanced, the longitudinal height gradually decreased, while the spatial frequency was unchanged. In addition, there were very few metal impurities on the etched sample. During the ion beam sputtering process, island-like structures promoted the growth of ripples but destroyed their orderliness.


2009 ◽  
Vol 1181 ◽  
Author(s):  
Jens Völlner ◽  
Bashkim Ziberi ◽  
Frank Frost ◽  
Bernd Rauschenbach

AbstractRipple formation and smoothing of pre-patterned fused silica surfaces by low-energy ion beam erosion have been investigated. As pre-pattern ripple surfaces produced by low-energy Ar+ ion beam erosion were used. In addition to the enhanced ripple formation on the pre-patterned surfaces also the smoothing characteristics of surface is changed. Due to the anisotropic surface roughness of the ripple pattern the irradiation direction with respect to the pre-pattern becomes important. It is suggested that all of these effects are related to surface gradient dependent sputtering and therefore it is an important mechanisms also in the low-energy ion beam erosion of fused silica surfaces.


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