scholarly journals Charge Compensation in Hard X-ray Photoelectron Spectroscopy by Electron Beam of Several Kilo-eletron-volts

2019 ◽  
Vol 26 (2) ◽  
pp. 202-203
Author(s):  
Satoshi Yasuno
Keyword(s):  
Electron Beam ◽  
Photoelectron Spectroscopy ◽  
Charge Compensation ◽  
X Ray

Deposition of Cobalt Doped Zinc Oxide Thin Film Nano-Composites Via Pulsed Electron Beam Ablation

MRS Advances ◽  
2016 ◽  
Vol 1 (6) ◽  
pp. 433-439 ◽  
Author(s):  
Asghar Ali ◽  
Patrick Morrow ◽  
Redhouane Henda ◽  
Ragnar Fagerberg
Keyword(s):  
Zinc Oxide ◽  
Electron Beam ◽  
Binding Energy ◽  
Photoelectron Spectroscopy ◽  
Xrd Analysis ◽  
Sem Analysis ◽  
Oxide Thin Film ◽  
X Ray ◽  
Pulsed Electron Beam ◽  
Deposited Films

AbstractThis study reports on the preparation of cobalt doped zinc oxide (Co:ZnO) films via pulsed electron beam ablation (PEBA) from a single target containing 20 w% Co on sapphire (0001) and silicon (100) substrates. The films have been deposited at various temperatures (350оC, 400оC, 450оC) and pulse frequencies (2 Hz, 4 Hz), under a background argon (Ar) pressure of about 3 mtorr, and an accelerating voltage of 14 kV. The surface morphology has been examined by atomic force microscopy (AFM) and scanning electron microscopy (SEM). According to SEM analysis, the films consist of nano-globules whose size is in the range of 80-178 nm. Energy dispersive x-ray spectroscopy (EDX) reveals that deposition is congruent and the prepared films contain ∼20±5 w% cobalt. It has been found that the nano-globules in the deposited films are cobalt-rich zones containing ∼70 w% Co. From x-ray photoelectron spectroscopy (XPS) analysis, Co 2p3/2 peaks indicate that the deposited films contain CoO (binding energy = 780.5 eV) as well as metallic Co (binding energy = 778.1-778.5 eV). X-ray diffraction (XRD) analysis supports the presence of metallic Co hcp phase (2ϴ = 44.47° and 47.43°) in the films.

Surface Structure of Sulfur Coated GaAs

1989 ◽  
Vol 163 ◽  
Author(s):  
Yoshihisa Fujisaki ◽  
Shigeo Goto
Keyword(s):  
Electron Beam ◽  
Surface Structure ◽  
Chemical Bond ◽  
Photoelectron Spectroscopy ◽  
Strong Dependence ◽  
High Energy ◽  
Chemical Bonds ◽  
High Energy Electron ◽  
X Ray ◽  
Beam Diffraction

AbstractSurface structure of (NH4)2S treated GaAs. is investigated using PL (PhotoLuminescence), XPS (X-ray Photoelectron Spectroscopy) and RHEED (Reflection of High Energy Electron beam Diffraction). The data taken with these techniques show the strong dependence upon the crystal orientations coming from the stabilities of chemical bonds of Ga-S and As-S on GaAs crystals. The greater enhancement of PL intensity, the clearer RHEED patterns and the smaller amount of oxides on (111)A than (111)B implies the realization of a more stable structure composed mainly of the Ga-S chemical bond.

COMPOSITION AND NANOHARDNESS OF SiC FILMS DEPOSITED BY ELECTRON BEAM PHYSICAL VAPOR DEPOSITION

2009 ◽  
Vol 23 (06n07) ◽  
pp. 1910-1915 ◽  
Author(s):  
MIN TENG ◽  
XIAODONG HE ◽  
YUE SUN
Keyword(s):  
Electron Beam ◽  
Chemical Bonding ◽  
Vapor Deposition ◽  
Photoelectron Spectroscopy ◽  
Physical Vapor Deposition ◽  
Current Intensity ◽  
X Ray ◽  
Deposited Films ◽  
Sic Films

SiC films with a quantity of carbon and silicon were obtained by electron beam physical vapor deposition (EB-PVD) from a sintered SiC target with different current intensity of EB. The X-ray photoelectron spectroscopy (XPS) was used for characterization of chemical bonding states of C and Si elements in SiC films in order to study the influence of current intensity of EB on the compositions in the deposited films. At the same time, the nanohardness of the deposited films was investigated.

Chemistry, microstructure, and electrical properties at interfaces between thin films of cobalt and alpha (6H) silicon carbide (0001)

1995 ◽  
Vol 10 (1) ◽  
pp. 26-33 ◽  
Author(s):  
L.M. Porter ◽  
R.F. Davis ◽  
J.S. Bow ◽  
M.J. Kim ◽  
R.W. Carpenter
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Transmission Electron Microscopy ◽  
Electron Beam ◽  
Electrical Properties ◽  
Photoelectron Spectroscopy ◽  
Electron Beam Evaporation ◽  
Leakage Currents ◽  
X Ray ◽  
Transmission Electron

Thin films (4–1000 Å) of Co were deposited onto n-type 6H-SiC(0001) wafers by UHV electron beam evaporation. The chemistry, microstructure, and electrical properties were determined using x-ray photoelectron spectroscopy, high resolution transmission electron microscopy, and I-V and C-V measurements, respectively. The as-deposited contacts exhibited excellent rectifying behavior with low ideality factors and leakage currents of n < 1.06 and 2.0 × 10−8 A/cm2 at −10 V, respectively. During annealing at 1000 °C for 2 min, significant reaction occurred resulting in the formation of CoSi and graphite. These annealed contacts exhibited ohmic-like character, which is believed to be due to defects created in the interface region.

Electron beam effects on diethylsilane-covered Si(100) surfaces investigated by x-ray photoelectron spectroscopy

2003 ◽  
Vol 35 (13) ◽  
pp. 1041-1045 ◽  
Author(s):  
P. W. Wang ◽  
J. Lozano ◽  
K. R. Kimberlin ◽  
J. H. Craig
Keyword(s):  
Electron Beam ◽  
Photoelectron Spectroscopy ◽  
X Ray

Electron and Photon Irradiation Effects in Metal/Amorphous Chalcogenide Bilayers

1994 ◽  
Vol 337 ◽  
Author(s):  
Andreas Ploessl ◽  
B.J. Dhanjal ◽  
A.G. Fitzgerald ◽  
R.A.G. Gibson ◽  
A.D. Gillies
Keyword(s):  
Electron Beam ◽  
Ultraviolet Light ◽  
Photoelectron Spectroscopy ◽  
Structural Changes ◽  
X Ray ◽  
Photon Irradiation ◽  
Amorphous Chalcogenides ◽  
Potential Benefits ◽  
Electron And Photon ◽  
Better Than

ABSTRACTThin film bilayers of metal and amorphous chalcogenides have been prepared by evaporation. The metals were silver and zinc, while the chalcogenides were P2Se3 and arsenic sulphides, mainly As2S3. The metals dissolved into the chalcogenide films when illuminated with ultraviolet light or when irradiated with an electron beam. The changes in composition and chemical bonding which were caused by this irradiation, were investigated by x-ray photoelectron spectroscopy. The concomitant structural changes have been investigated by electron diffraction.After the metal and chalcogenide had intermixed, either due to photon or electron irradiation, the layers became sensitive to an electron beam; this sensitivity depended on the composition of the chalcogenide. Energy-dispersive x-ray microanalysis showed that the electron beam rapidly, but reversibly, depleted the irradiated areas of the dissolved metal. Very fine patterns, of better than half-micron resolution, could be written. By exposing a pure arsenic sulphide film through a shadow mask to ultraviolet light, zinc could be deposited selectively to form fine patterns. Plasma processing developed either kind of pattern reliably, thus rendering the material a dry inorganic resist for photo- and electron-beam-lithography with potential benefits in particular for GaAs.

5MeV Si Ion Modification on Thermoelectric SiO2/SiO2+Cu Multilayer Films

2011 ◽  
Vol 1354 ◽  
Author(s):  
C. Smith ◽  
S. Budak ◽  
T. Jordan ◽  
J. Chacha ◽  
B. Chhay ◽  
...  
Keyword(s):  
Electron Beam ◽  
Vapor Deposition ◽  
Photoelectron Spectroscopy ◽  
Physical Vapor Deposition ◽  
Ion Bombardment ◽  
Multilayer Films ◽  
Binding Energies ◽  
X Ray ◽  
Available Energy ◽  
Energy States

AbstractWe prepared samples by electron beam physical vapor deposition EB-PVD followed by ion bombardment. The samples were than characterized by photoluminescence (PL), x-ray photoelectron spectroscopy (XPS). PL was used to characterize the available energy states. XPS was used to determine the binding energies. The ML’s are comprised of 100 alternating layers of SiO2/SiO2+Cu.

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