scholarly journals Realization of trophy shaped flexible wearable antenna based on foam substrate

2018 ◽  
Vol 7 (2.12) ◽  
pp. 222
Author(s):  
Reema Dubey ◽  
Vinod Kumar Singh ◽  
Akash Kumar Bhoi ◽  
Zakir Ali
Keyword(s):  
Dielectric Constant ◽  
Reflection Coefficient ◽  
Loss Tangent ◽  
Low Dielectric Constant ◽  
Polystyrene Foam ◽  
Low Loss ◽  
Wearable Antenna ◽  
Low Dielectric ◽  
Large Bandwidth ◽  
Flexible Antenna

The endeavor of this paper is to analyze a light weighted flexible antenna for modern communication system. There are three different patch designs with operating frequency 4GHz. These proposed antennas are compact in size, shows high directivity and large bandwidth. Ex-pandable polystyrene foam is used as a substrate because such antenna are bendable, wearable, cheap, require less attention and having good features like low dielectric constant, low loss tangent and better efficiency. The antenna parameters like reflection coefficient, gain, band-width, radiation pattern are analyzed. The reflection coefficient of anticipated antenna provides a good concurrence between simulated and measured result. Foam based design is simulated by using CST studio. 

Photosensitive Polyimide having low loss tangent for RF application

2018 ◽  
Vol 2018 (1) ◽  
pp. 000476-000482 ◽  
Author(s):  
Masao Tomikawa ◽  
Hitoshi Araki ◽  
Yohei Kiuchi ◽  
Akira Shimada
Keyword(s):  
Molecular Structure ◽  
Dielectric Constant ◽  
Dielectric Properties ◽  
Dielectric Loss ◽  
High Frequency ◽  
Low Dielectric Constant ◽  
Low Loss ◽  
Elongation At Break ◽  
Low Dielectric ◽  
The Poor

Abstract Progress of 5G telecommunication and mm radar for autopilot, high frequency operation is required. Insulator materials having low loss at high frequency is desired for the applications. We designed the low dielectric constant, and low dielectric loss materials examined molecular structure of the polyimide and found that permittivity 2.6 at 20GHz, dielectric loss 0.002. Furthermore, in consideration of mechanical properties such as the toughness and adhesion to copper from a point of practical use. Dielectric properties largely turned worse when giving photosensitivity. To overcome the poor dielectric properties, we designed the photosensitive system. After all, we successfully obtained 3.5 of dielectric constant and 0.004 of dielectric loss, and 100% of elongation at break. In addition, we offered a B stage sheet as well as varnish. These materials are applicable to re-distribution layer of FO-WLP, Interposer and other RF applications for microelectronics.

Low Loss LTCC Ag System for 5G Applications

2021 ◽  
Vol 2021 (HiTEC) ◽  
pp. 000105-000111
Author(s):  
Ellen Tormey ◽  
Chao Ma ◽  
John Maloney ◽  
Bradford Smith ◽  
Sid Sridharan ◽  
...  
Keyword(s):  
Dielectric Constant ◽  
High Frequency ◽  
Lower Cost ◽  
Low Dielectric Constant ◽  
Low Latency ◽  
Frequency Range ◽  
Low Loss ◽  
Green Tape ◽  
Low Dielectric ◽  
Wireless Telecommunications

Abstract Low dielectric constant/low loss LTCC materials have drawn much attention with the emergence of 5G wireless telecommunications. LTCC offers unique properties in the millimeter wave frequency range. The low dielectric constant and dielectric loss enable low latency devices with enhanced performance. To meet the market demands of higher performance and lower cost, Ferro has developed a new M7 LTCC/Ag cofireable system suitable for antenna in 5G and other high frequency applications. M7 LTCC ceramic green tape and cofireable Ag conductors have been developed and tested. Properties of the LTCC/Ag system are included herein including high frequency dielectric properties.

Structural-Functional Integrative Mullitef/SiBN Composites with Excellent Wave-Transparent and Mechanical Properties

2016 ◽  
Vol 697 ◽  
pp. 498-505
Author(s):  
Guang Ya Li ◽  
Yan Yuan Liang ◽  
Jia Chen Liu
Keyword(s):  
Dielectric Constant ◽  
Room Temperature ◽  
Bending Strength ◽  
Low Dielectric Constant ◽  
Low Loss ◽  
Transparent Material ◽  
Technical Parameters ◽  
Low Dielectric ◽  
Dielectric Performance ◽  
Changing Rate

A structural-functional integrative wave-transparent material, consisted of BN coating and SiBN substrate, is synthesized through precursor infiltration pyrolysis (PIP) process. Then the technical parameters and procedures are obtained according to the key properties of the precursors. Studies on the microstructures and properties of the composite show that compact substrate and weak interface enhance the strength, and porous structure improves the dielectric performance of the composite. The composite exhibites good bending strength (~95.12 MPa), tensile strength (~34.95 MPa) and compressive strength (~80.92 MPa). Moreover the composite displays a low dielectric constant (4.17) and a low loss tangent (9.7×10-3) at room temperature. The composite has a low changing rate of dielectric constant (~2.01% per 100°C). These results imply that the composite with excellent mechanical and dielectric properties can be an excellent wave-transparent material applied in the fields of aerospace.

Structire, Properties, and Process Characteristics of Low-K Materials Prepared by PECVD

1999 ◽  
Vol 565 ◽  
Author(s):  
Y. Shimogaki ◽  
S. W. Lim ◽  
E. G. Loh ◽  
Y. Nakano ◽  
K. Tada ◽  
...  
Keyword(s):  
Growth Rate ◽  
Dielectric Constant ◽  
Gas Flow ◽  
Structural Changes ◽  
Silicon Oxide ◽  
Reactive Species ◽  
Low Dielectric Constant ◽  
Low Dielectric ◽  
Step Coverage ◽  
Low K

AbstractLow dielectric constant F-doped silicon oxide films (SiO:F) can be prepared by adding fluorine source, like as CF4 to the conventional PECVD processes. We could obtain SiO:F films with dielectric constant as low as 2.6 from the reaction mixture of SiH4/N2 O/CF4. The structural changes of the oxides were sensitively detected by Raman spectroscopy. The three-fold ring and network structure of the silicon oxides were selectively decreased by adding fluorine into the film. These structural changes contribute to the decrease ionic polarization of the film, but it was not the major factor for the low dielectric constant. The addition of fluorine was very effective to eliminate the Si-OH in the film and the disappearance of the Si-OH was the key factor to obtain low dielectric constant. A kinetic analysis of the process was also performed to investigate the reaction mechanism. We focused on the effect of gas flow rate, i.e. the residence time of the precursors in the reactor, on growth rate and step coverage of SiO:F films. It revealed that there exists two species to form SiO:F films. One is the reactive species which contributes to increase the growth rate and the other one is the less reactive species which contributes to have uniform step coverage. The same approach was made on the PECVD process to produce low-k C:F films from C2F4, and we found ionic species is the main precursor to form C:F films.

Defect free monolayer and bilayer graphene exfoliated by solvent with low dielectric constant

2020 ◽  
Author(s):  
Vedanki ◽  
Chandrabhan Dohare ◽  
Pawan KumarSrivastava ◽  
Premlata Yadav ◽  
Subhasis Ghosh
Keyword(s):  
Dielectric Constant ◽  
Bilayer Graphene ◽  
Low Dielectric Constant ◽  
Low Dielectric
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