scholarly journals GaAs Nanomembranes in the High Electron Mobility Transistor Technology

Materials ◽  
2021 ◽  
Vol 14 (13) ◽  
pp. 3461
Author(s):  
Dagmar Gregušová ◽  
Edmund Dobročka ◽  
Peter Eliáš ◽  
Roman Stoklas ◽  
Michal Blaho ◽  
...  

A 100 nm MOCVD-grown HEMT AlGaAs/InGaAs/GaAs heterostructure nanomembrane was released from the growth GaAs substrate by ELO using a 300 nm AlAs layer and transferred to sapphire. The heterostructure contained a strained 10 nm 2DEG In0.23Ga0.77As channel with a sheet electron concentration of 3.4 × 1012 cm−2 and Hall mobility of 4590 cm2V−1s−1, which was grown close to the center of the heterostructure to suppress a significant bowing of the nanomembrane both during and after separation from the growth substrate. The as-grown heterostructure and transferred nanomembranes were characterized by HRXRD, PL, SEM, and transport measurements using HEMTs. The InGaAs and AlAs layers were laterally strained: ~−1.5% and ~−0.15%. The HRXRD analysis showed the as-grown heterostructure had very good quality and smooth interfaces, and the nanomembrane had its crystalline structure and quality preserved. The PL measurement showed the nanomembrane peak was shifted by 19 meV towards higher energies with respect to that of the as-grown heterostructure. The HEMTs on the nanomembrane exhibited no degradation of the output characteristics, and the input two-terminal measurement confirmed a slightly decreased leakage current.

2020 ◽  
Vol 70 (5) ◽  
pp. 511-514
Author(s):  
Subhash Chander ◽  
Partap Singh ◽  
Samuder Gupta ◽  
D. S. Rawal ◽  
Mridula Gupta

In this paper effect of self-heating has been studied of AlGaN/GaN high electron mobility transistor (HEMT) for different passivation layers which is promising device for high power at high frequencies. The different passivation layers used are aluminium oxide (Al2O3), silicon nitride (SiN) and silicon dioxide (SiO2). The device GaN HEMT has been simulated and characterised for its thermal behaviour by the distribution of lattice temperature inside the device using device simulation tool ATLAS from SILVACO. The transfer and output characteristics with and without self-heating has been studied for electrical characterisation. The channel temperature for different passivation observed is 448 K, 456 K and 471 K forAl2O3, SiN and SiO2 respectively. The observed different temperatures are due to difference in their thermal conductivity. This channel temperature information is critical to study the reliability of the device at high power levels.


2003 ◽  
Vol 42 (Part 2, No. 6B) ◽  
pp. L658-L659
Author(s):  
Chang-Soon Choi ◽  
Hyo-Soon Kang ◽  
Dae-Hyun Kim ◽  
Kwang-Seok Seo ◽  
Woo-Young Choi

2019 ◽  
Vol 217 (7) ◽  
pp. 1900694
Author(s):  
Uiho Choi ◽  
Donghyeop Jung ◽  
Kyeongjae Lee ◽  
Taemyung Kwak ◽  
Taehoon Jang ◽  
...  

2006 ◽  
Vol 45 (No. 35) ◽  
pp. L932-L934 ◽  
Author(s):  
Li-Hsin Chu ◽  
Heng-Tung Hsu ◽  
Edward-Yi Chang ◽  
Tser-Lung Lee ◽  
Sze-Hung Chen ◽  
...  

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