Design of a New Power Efficient Explicit-Pulsed Dual Edge Triggered Sense-Amplifier Flip-Flop

As the demand for low-power and high-speed logic circuits increases, the design of differential flip-flops based on sense-amplifier (SAFF), which have excellent power and speed characteristics, has become more and more popular. Conventional SAFF (Con SAFF) and improved SAFF designs focus more on the improvement of speed and power consumption, but ignore their Single-Event-Upset (SEU) sensitivity. In fact, SAFF is more susceptible to particle impacts due to the small voltage swing required for differential input in the master stage. Based on the SEU vulnerability of SAFF, this paper proposes a novel scheme, namely cross-layer Dual Modular Redundancy (DMR), to improve the robustness of SAFF. That is, unit-level DMR technology is performed in the master stage, while transistor-level stacking technology is used in the slave stage. This scheme can be applied to some current typical SAFF designs, such as Con SAFF, Strollo SAFF, Ahmadi SAFF, Jeong SAFF, etc. Detailed HSPICE simulation results demonstrate that hardened SAFF designs can not only fully tolerate the Single Node Upset of sensitive nodes, but also partially tolerate the Double Node Upset caused by charge sharing. Besides, compared with the conventional DMR hardened scheme, the proposed cross-layer DMR hardened scheme not only has the same fault-tolerant characteristics, but also greatly reduces the delay, area and power consumption.

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Design and Analysis of Power Efficient TG Based Dual Edge Triggered Flip-Flops with Stacking Technique

Journal of Circuits System and Computers ◽

10.1142/s0218126620501236 ◽

2019 ◽

Vol 29 (08) ◽

pp. 2050123 ◽

Cited By ~ 1

Author(s):

Neethu Anna Sabu ◽

K. Batri

Keyword(s):

Vlsi Design ◽

Cmos Technology ◽

Flip Flop ◽

Circuit Performance ◽

Power Efficient ◽

Transmission Gate ◽

Double Edge ◽

Speed Performance ◽

Layout Area ◽

Power Delay Product

One of the paramount issues in the field of VLSI design is the rapid increase in power consumption. Therefore, it is necessary to develop power-efficient circuits. Here, three new simple architectures are presented for a Dynamic Double Edge Triggered Flip-flop named as Transistor Count Reduction Flip-flop, S-TCRFF (Series Stacking in TCRFF) and FST in TCRFF (Forced Stacking of Transistor in TCRFF). The first one features a dynamic design comprising of transmission gate in which total transistor count has greatly reduced without affecting the logic, thereby attaining better power and speed performance. For the reduction of static power, two types of stacking called series and forced transistor stacking are applied. The circuits are simulated using Cadence Virtuoso in 45[Formula: see text]nm CMOS technology with a power supply of 1[Formula: see text]V at 500[Formula: see text]MHz when input switching activity is 25%. The simulated results indicated that the new designs (TCRFF, S-TCRFF and FST in TCRFF) excelled in different circuit performance indices like Power-Delay-Product (PDP), Energy-Delay-Product (EDP), average and leakage power with less layout area compared with the performance of nine recently proposed FF designs. The improvement in PDPdq value was up to 89.2% (TCRFF), 89.9% (S-TCRFF) and 90.3% (FST in TCRFF) with conventional transmission gate FF (TGFF).

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