Abstraction NBTI model
Keyword(s):
Abstract Negative Bias Temperature Instability (NBTI) is one of the major transistor aging effects, possibly leading to timing failures during run-time of a system. Thus one is interested in predicting this effect during design time. In this work an Abstraction NBTI model is introduced reducing the state space of trap-based NBTI models using two abstraction parameters, applying a state transformation to incorporate variable stress conditions. This transformation is faster than traditional approaches. Currently the conversion into estimated threshold voltage damages is a very time consuming process.
2016 ◽
Vol 4
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pp. 01-05
2001 ◽
2015 ◽
Vol 33
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pp. 022201
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2010 ◽
Vol 49
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pp. 04DC24
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2002 ◽
Vol 41
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pp. 2423-2425
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2013 ◽
Vol 52
(4S)
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pp. 04CC06
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