Al-2.47 Dry-Etch Resistance

2021 ◽  
Author(s):  
Richard G. Jones ◽  
Christopher K. Ober ◽  
Teruaki Hayakawa ◽  
Christine K. Luscombe ◽  
Natalie Stingelin
Keyword(s):  
Dry Etch

A Study of Pad Contamination Defect and Removal

2008 ◽  
Author(s):  
K.A. Mohammad ◽  
L.J. Liu ◽  
S.F. Liew ◽  
S.F. Chong ◽  
D.G. Lee ◽  
...  
Keyword(s):  
Failure Analysis ◽  
Gate Oxide ◽  
Action Plans ◽  
Preventive Action ◽  
Oxide Breakdown ◽  
Reliability Level ◽  
The Future ◽  
Dry Etch ◽  
Removal Technique

Abstract The paper focuses on the pad contamination defect removal technique. The defect is detected at the outgoing inspection step. The failure analysis results showed that the defect is Fluorine type contamination. The failure analysis indicated many source contributors mainly from Fluorine based processes. The focus is in the present work is in the rework method for the removal of this defect. The combination of wet and dry etch processing in the rework routine is utilized for the removal of the defect and preventive action plans for in-line were introduced and implemented to avoid this event in the future. The reliability of the wafer is verified using various tests including full map electrical, electrical sort, gate oxide breakdown (GOI) and wafer reliability level, passivation quick kill to ensure the integrity of the wafer after undergoing the rework routine. The wafer is monitored closely over a period of time to ensure it has no mushroom defect.

Polymer designs for dense metal infiltration for higher dry-etch resistance

2020 ◽  
Vol 59 (SI) ◽  
pp. SIIC02
Author(s):  
Norikatsu Sasao ◽  
Shinobu Sugimura ◽  
Koji Asakawa
Keyword(s):  
Dry Etch ◽  
Metal Infiltration

Stability of Co/Ni Silicide in Metal Contact Dry Etch

2004 ◽  
Vol 14 (8) ◽  
pp. 573-578
Author(s):  
Ohsung Song ◽  
Sungjin Beom ◽  
Dugjoong Kim
Keyword(s):  
Metal Contact ◽  
Dry Etch

New high-rate dry etch mixture for InP-based heterostructures

1992 ◽  
Vol 28 (5) ◽  
pp. 448 ◽  
Author(s):  
S.J. Pearton ◽  
U.K. Chakrabarti ◽  
D. Coblentz ◽  
F. Ren ◽  
T.R. Fullowan ◽  
...  
Keyword(s):  
High Rate ◽  
Dry Etch

High-temperature electrostatic chuck for nonvolatile materials dry etch

2005 ◽  
Vol 23 (1) ◽  
pp. 113 ◽  
Author(s):  
S. Kanno ◽  
M. Edamura ◽  
K. Yoshioka ◽  
R. Nishio ◽  
S. Kanai ◽  
...  
Keyword(s):  
High Temperature ◽  
Dry Etch

scholarly journals Sidewall Slope Control of InP Via Holes for 3D Integration

Micromachines ◽  
2021 ◽  
Vol 12 (1) ◽  
pp. 89
Author(s):  
Jongwon Lee ◽  
Kilsun Roh ◽  
Sung-Kyu Lim ◽  
Youngsu Kim
Keyword(s):  
Inductively Coupled Plasma ◽  
Sio2 Layer ◽  
Etch Depth ◽  
Rf Power ◽  
3D Integration ◽  
Inductively Coupled ◽  
Wide Range ◽  
Via Holes ◽  
Dry Etch ◽  
Icp Etcher

This is the first demonstration of sidewall slope control of InP via holes with an etch depth of more than 10 μm for 3D integration. The process for the InP via holes utilizes a common SiO2 layer as an InP etch mask and conventional inductively coupled plasma (ICP) etcher operated at room temperature and simple gas mixtures of Cl2/Ar for InP dry etch. Sidewall slope of InP via holes is controlled within the range of 80 to 90 degrees by changing the ICP power in the ICP etcher and adopting a dry-etched SiO2 layer with a sidewall slope of 70 degrees. Furthermore, the sidewall slope control of the InP via holes in a wide range of 36 to 69 degrees is possible by changing the RF power in the etcher and introducing a wet-etched SiO2 layer with a small sidewall slope of 2 degrees; this wide slope control is due to the change of InP-to-SiO2 selectivity with RF power.

Photoreflectance investigation of dry-etch-induced damage in semi-insulating GaAs substrates

1993 ◽  
Vol 63 (1-4) ◽  
pp. 158-162 ◽  
Author(s):  
M. Murtagh ◽  
P.V. Kelly ◽  
P.A.F. Herbert ◽  
M. O'Connor ◽  
G. Duffy ◽  
...  
Keyword(s):  
Gaas Substrates ◽  
Dry Etch

Selective High-Throughput TiN Etching Methods

2012 ◽  
Vol 195 ◽  
pp. 143-145 ◽  
Author(s):  
Emanuel I. Cooper ◽  
Rekha Rajaram ◽  
Makonnen Payne ◽  
Steven Lippy
Keyword(s):  
Titanium Nitride ◽  
High Throughput ◽  
Seed Layer ◽  
Wet Etching ◽  
Thermochemical Properties ◽  
Hard Mask ◽  
Acidic Solutions ◽  
Layer Deposition ◽  
Wet Etch ◽  
Dry Etch

Titanium nitride (TiN) is widely used as a hard mask film protecting the inter-level dielectric (ILD) before metal or plating seed layer deposition steps. It is common practice to use a wet etch in order to remove residues formed during the ILD dry-etch step, and at the same time to remove some or all of the exposed TiN. From its thermochemical properties, it might be predicted that wet etching of TiN should be easy, since it is quite unstable with respect to both plain and oxidative hydrolysis. For example, in acidic solutions at 25°C [1, :

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