Tunneling-induced broadband and tunable optical emission from plasmonic nanorod metamaterials

AbstractWe demonstrate a metamaterial platform for electrically driven broadband light emission induced by electron tunneling. Both the Fabry-Perot and waveguided modes of the metamaterial slab as well the plasmonic mode of the tunneling gap are identified as contributing to shaping the emission spectrum. This opens up an opportunity to design the spectrum and polarization of the emitted light by tuning the metamaterial modes via the geometric parameters of the nanostructure throughout the visible and near-infrared spectral ranges. The efficient coupling of the tunneling-induced emission to the waveguided modes is beneficial for the development of integrated incoherent light sources, while the outcoupled emission provides a source of free-space radiation. The demonstrated incoherent nanoscale light sources may find applications in the development of integrated opto-electronic circuits, optical sensing platforms, imaging, and metrology.

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Integrated Optical Phased Arrays for Beam Forming and Steering

Applied Sciences ◽

10.3390/app11094017 ◽

2021 ◽

Vol 11 (9) ◽

pp. 4017

Author(s):

Yongjun Guo ◽

Yuhao Guo ◽

Chunshu Li ◽

Hao Zhang ◽

Xiaoyan Zhou ◽

...

Keyword(s):

Near Infrared ◽

Phased Arrays ◽

Mechanical Stability ◽

Building Blocks ◽

High Yield ◽

Beam Forming ◽

Integrated Optical ◽

Optical Phased Arrays ◽

Infrared Spectral ◽

Spectral Ranges

Integrated optical phased arrays can be used for beam shaping and steering with a small footprint, lightweight, high mechanical stability, low price, and high-yield, benefiting from the mature CMOS-compatible fabrication. This paper reviews the development of integrated optical phased arrays in recent years. The principles, building blocks, and configurations of integrated optical phased arrays for beam forming and steering are presented. Various material platforms can be used to build integrated optical phased arrays, e.g., silicon photonics platforms, III/V platforms, and III–V/silicon hybrid platforms. Integrated optical phased arrays can be implemented in the visible, near-infrared, and mid-infrared spectral ranges. The main performance parameters, such as field of view, beamwidth, sidelobe suppression, modulation speed, power consumption, scalability, and so on, are discussed in detail. Some of the typical applications of integrated optical phased arrays, such as free-space communication, light detection and ranging, imaging, and biological sensing, are shown, with future perspectives provided at the end.

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Three-dimensional silicon-based nanostructures in opal matrix: Preparation and properties

MRS Proceedings ◽

10.1557/proc-638-f14.45.1 ◽

2000 ◽

Vol 638 ◽

Author(s):

A.B. Pevtsov ◽

V.G. Golubev ◽

V.A. Kosobukin ◽

D.A. Kurdyukov ◽

A.V. Medvedev

Keyword(s):

Near Infrared ◽

Photonic Band Gap ◽

Three Dimensional ◽

Opal Matrix ◽

Variable Extent ◽

Infrared Spectral ◽

Spectral Ranges ◽

Silicon Based ◽

Photonic Band ◽

Matrix Preparation

AbstractThree-dimensional opal-silicon composites with both direct (a variable extent of filling of opal voids with silicon) and inverted structures have been synthesized. A structural analysis of these fabricated systems is performed. Reflectance spectra from the (111) surface of the composites are measured within the spectral range 400-900 nm. Observed spectral features are interpreted as a manifestation of the [111] direction photonic band gap that is tunable in position and width in the visible and near-infrared spectral ranges.

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An optical system for remote sensing in the UV, visible, and NIR spectral ranges

Computer Optics ◽

10.18287/2412-6179-co-611 ◽

2020 ◽

Vol 44 (2) ◽

pp. 195-202

Author(s):

V.M. Vladimirov ◽

V.A. Yukseev ◽

E.G. Lapukhin

Keyword(s):

Remote Sensing ◽

Optical System ◽

Near Infrared ◽

Ultra Violet ◽

Field Of View ◽

Structural Elements ◽

Earth Remote Sensing ◽

Infrared Spectral ◽

Uv Visible ◽

Spectral Ranges

In this work, we propose a high-resolution optical system for Earth remote sensing, operating at 200-3300-nm wavelengths and providing a 4º field of view. Parameters of the system's structural elements are calculated and presented. Dot charts of the spots of confusion for the center, intermediate zones, and the edge of the field are considered. Over most of the operating wavelengths, the optical system is shown to be diffraction-limited, which provides attaining the highest possible spatial resolution. This system is considered as a tool for monitoring of the Earth's surface and collection of information in the ultra-violet, visible and near infrared spectral ranges (200-3300 nanometers).

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Quantum-Sized Silicon Precipitates in Silicon-Implanted and Pulse-Annealed Silicon Dioxide Films: Photoluminescence and Structural Transformations

MRS Proceedings ◽

10.1557/proc-438-453 ◽

1996 ◽

Vol 438 ◽

Cited By ~ 7

Author(s):

I. E. Tyschenko ◽

G. A. Kachurin ◽

K. S. Zhuravlev ◽

N. A. Pazdnikov ◽

V. A. Volodin ◽

...

Keyword(s):

Electron Microscopy ◽

Silicon Dioxide ◽

Near Infrared ◽

Light Emission ◽

High Resolution Electron Microscopy ◽

Structural Transformations ◽

Light Sources ◽

Furnace Annealing ◽

Si Nanocrystals ◽

Resolution Electron

AbstractStrong blue, red and near-infrared photoluminescence has been observed from Si+-implanted and pulse-annealed SiO2 layers. Raman scattering and high-resolution electron microscopy analyses have revealed a correlation between the structure of the Si inclusions in the SiO2 matrix and the photoluminescence. Structural transformations in the Si-rich SiO2 layers during pulse and furnace annealing have been discussed in terms of the changes in the light emission observed experimentally. Small Si clusters, non-crystalline inclusions and nanocrystals are believed to be the light sources. The blue, red and near-infrared photoluminescence is associated with small complexes of excess Si atoms, non-crystalline Si nanoinclusions and quantum-confined Si nanocrystals, respectively.

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Semiconductor light sources for near- and mid-infrared spectral ranges

Journal of Physics Conference Series ◽

10.1088/1742-6596/917/2/022003 ◽

2017 ◽

Vol 917 ◽

pp. 022003

Author(s):

L Ya Karachinsky ◽

A V Babichev ◽

A G Gladyshev ◽

D V Denisov ◽

A V Filimonov ◽

...

Keyword(s):

Light Sources ◽

Mid Infrared ◽

Infrared Spectral ◽

Spectral Ranges

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Progress Toward Crystalline-Silicon-Based Light-Emitting Diodes

MRS Bulletin ◽

10.1557/s0883769400037490 ◽

1993 ◽

Vol 18 (7) ◽

pp. 22-28 ◽

Cited By ~ 59

Author(s):

Leigh Canham

Keyword(s):

Near Infrared ◽

Crystalline Silicon ◽

Light Emitting Diode ◽

Holy Grail ◽

Light Emitting ◽

Vlsi Technology ◽

Materials Research ◽

Infrared Spectral ◽

Spectral Ranges ◽

Silicon Based

The semiconductor silicon is the dominant material in microelectronics and is one of the best-studied materials known to humanity. Its inability to emit light efficiently is therefore well documented. Nevertheless, a “holy grail” of semiconductor materials research has for decades been the realization of an efficient Si light-emitting diode (LED). Such a device would enable optoelectronic circuitry to be based entirely on silicon and would revolutionize VLSI technology since the other required Si-based devices (detectors, waveguides, modulators, etc.) have already been demonstrated. Although this holy grail has proved elusive, the 1990s have heralded greatly renewed interest and optimism in the development of such devices for both the visible and near-infrared spectral ranges. Dramatic progress is at last being made. This review focuses, in a somewhat chronological manner, on the progress of specific approaches to realizing crystalline structures of high radiative efficiency, and the materials constraints involved.

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A Molecular Chameleon: Reversible pH- and Cation-Induced Control of the Optical Properties of Phthalocyanine-Based Complexes in the Visible and Near-Infrared Spectral Ranges

Inorganic Chemistry ◽

10.1021/acs.inorgchem.5b02831 ◽

2016 ◽

Vol 55 (5) ◽

pp. 2450-2459 ◽

Cited By ~ 28

Author(s):

Evgeniya A. Safonova ◽

Alexander G. Martynov ◽

Sergey E. Nefedov ◽

Gayane A. Kirakosyan ◽

Yulia G. Gorbunova ◽

...

Keyword(s):

Optical Properties ◽

Near Infrared ◽

Infrared Spectral ◽

Spectral Ranges

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Optical Constants of Chemical Vapor Deposited Graphene for Photonic Applications

Nanomaterials ◽

10.3390/nano11051230 ◽

2021 ◽

Vol 11 (5) ◽

pp. 1230

Author(s):

Marwa A. El-Sayed ◽

Georgy A. Ermolaev ◽

Kirill V. Voronin ◽

Roman I. Romanov ◽

Gleb I. Tselikov ◽

...

Keyword(s):

Optical Properties ◽

Optical Constants ◽

Near Infrared ◽

Optoelectronic Devices ◽

Chemical Vapor ◽

Multilayer Graphene ◽

Practical Applications ◽

Chemical Vapor Deposited ◽

Infrared Spectral ◽

Spectral Ranges

Graphene is a promising building block material for developing novel photonic and optoelectronic devices. Here, we report a comprehensive experimental study of chemical-vapor deposited (CVD) monolayer graphene’s optical properties on three different substrates for ultraviolet, visible, and near-infrared spectral ranges (from 240 to 1000 nm). Importantly, our ellipsometric measurements are free from the assumptions of additional nanometer-thick layers of water or other media. This issue is critical for practical applications since otherwise, these additional layers must be included in the design models of various graphene photonic, plasmonic, and optoelectronic devices. We observe a slight difference (not exceeding 5%) in the optical constants of graphene on different substrates. Further, the optical constants reported here are very close to those of graphite, which hints on their applicability to multilayer graphene structures. This work provides reliable data on monolayer graphene’s optical properties, which should be useful for modeling and designing photonic devices with graphene.

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