scholarly journals Kinetics of silver photodiffusion into amorphous S-rich germanium sulphide – neutron and optical reflectivity

2019 ◽  
Vol 91 (11) ◽  
pp. 1821-1835 ◽  
Author(s):  
Yoshifumi Sakaguchi ◽  
Hidehito Asaoka ◽  
Maria Mitkova

Abstract Silver photodiffusion is one of the attractive photo-induced changes observed in amorphous chalcogenides. In this research, we focus on amorphous S-rich germanium sulphide and study the kinetics of the silver photodiffusion by neutron reflectivity, as well as optical reflectivity. It was found from the neutron reflectivity profiles with 30 s time resolution that silver dissolved into the germanium sulphide layer, forming a metastable reaction layer between the Ag and the germanium sulphide layers, within 2 min of light exposure. Subsequently, silver slowly diffused from the metastable reaction layer to the germanium sulphide host layer until the Ag concentration in both layers became identical, effectively forming one uniform layer; this took approximately 20 min. Optical reflectivity reveals the electronic band structure of the sample, complementary to neutron reflectivity. It was found from the optical reflectivity measurement that the metastable reaction layer was a metallic product. The product could be Ag8GeS6-like form, which is regarded as the combination of GeS2 and Ag2S, and whose backbone is composed of the GeS4 tetrahedral units and the S atoms. We attribute the first quick diffusion to the capture of Ag ions by the latter S atoms, which is realised by the S–S bond in amorphous S-rich germanium sulphide, while we attribute the second slow diffusion to the formation of the Ag–Ge–S network, in which Ag ions are captured by the former GeS4 tetrahedral units.

2003 ◽  
Vol 762 ◽  
Author(s):  
M. Zeman ◽  
V. Nádaždy ◽  
R.A.C.M.M. van Swaaij ◽  
R. Durný ◽  
J.W. Metselaar

AbstractThe charge deep-level transient spectroscopy (Q-DLTS) experiments on undoped hydrogenated amorphous silicon (a-Si:H) demonstrate that during light soaking the states in the upper part of the gap disappear, while additional states around and below midgap are created. Since no direct correlation is observed in light-induced changes of the three groups of states that we identify from the Q-DLTS signal, we believe that we deal with three different types of defects. Positively charged states above midgap are related to a complex formed by a hydrogen molecule and a dangling bond. Negatively charged states below midgap are attributed to floating bonds. Various trends in the evolution of dark conductivity due to light soaking indicate that the kinetics of light-induced changes of the three gap-state components depend on their initial energy distributions and on the spectrum and intensity of light during exposure.


1983 ◽  
Vol 27 ◽  
Author(s):  
L.E Mcneil ◽  
B.S. Elman ◽  
M.S Dresselhaus ◽  
G. Dresselhaus ◽  
T. Venkatesan

ABSTRACTThe use of a hot stage (T ∼ 600°C) for ion implantation into graphite permits the introduction of foreign species into the host material while eliminating most of the lattice damage associated with ion implantation at room temperature. This permits the use of the magnetoreflection technique for examination of changes in the electronic band structure induced by implantation Samples of graphite implanted with 31P and 11B at various energies and fluences are examined, and the in-plane and c-axis disorder are characterized using Raman spectroscopy and Rutherford Backscattering Spectrometer (RBS) techniques. Implantation-induced changes in the electronic band structure are interpreted in terms of the Slonczewski-Weiss- McClure band model. Small changes are found relative to the band parameters that describe pristine graphite.


2016 ◽  
Vol 34 (3) ◽  
pp. 617-626 ◽  
Author(s):  
Maciej Łuszczek

AbstractThe hypothetical stoichiometric CeBa2Cu3O7 (Ce123) compound, which has not been synthesized as a single phase yet, was studied by the density functional theory (DFT). We utilized a method which merges the local spin density approximation (LSDA) with the dynamical mean-field theory (DMFT) to account for the electronic correlations. The LSDA+DMFT calculations were performed in the high-temperature range. The particular emphasis was put on the pressure-induced changes in the electronic band structure related to strongly correlated 4f states. The computational results indicate the occurrence of a large negative volumetric thermal expansion coefficient near T = 500 K and a trace of a low-volume isostructural metastable state at high temperatures.


Graphene ◽  
2013 ◽  
Vol 02 (01) ◽  
pp. 1-7 ◽  
Author(s):  
Leif I. Johansson ◽  
Chao Xia ◽  
Chariya Virojanadara

Physica ◽  
1954 ◽  
Vol 3 (7-12) ◽  
pp. 967-970
Author(s):  
D JENKINS

1972 ◽  
Vol 33 (C3) ◽  
pp. C3-223-C3-233 ◽  
Author(s):  
I. B. GOLDBERG ◽  
M. WEGER

2018 ◽  
Vol 1 (1) ◽  
pp. 46-50
Author(s):  
Rita John ◽  
Benita Merlin

In this study, we have analyzed the electronic band structure and optical properties of AA-stacked bilayer graphene and its 2D analogues and compared the results with single layers. The calculations have been done using Density Functional Theory with Generalized Gradient Approximation as exchange correlation potential as in CASTEP. The study on electronic band structure shows the splitting of valence and conduction bands. A band gap of 0.342eV in graphene and an infinitesimally small gap in other 2D materials are generated. Similar to a single layer, AA-stacked bilayer materials also exhibit excellent optical properties throughout the optical region from infrared to ultraviolet. Optical properties are studied along both parallel (||) and perpendicular ( ) polarization directions. The complex dielectric function (ε) and the complex refractive index (N) are calculated. The calculated values of ε and N enable us to analyze optical absorption, reflectivity, conductivity, and the electron loss function. Inferences from the study of optical properties are presented. In general the optical properties are found to be enhanced compared to its corresponding single layer. The further study brings out greater inferences towards their direct application in the optical industry through a wide range of the optical spectrum.


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