Zum Mechanismus der Spaltfragment-induzierten Desorption / About the Mechanism of Fission-Fragment Induced Desorption

Zeitschrift für Naturforschung A ◽

10.1515/zna-1977-1002 ◽

1977 ◽

Vol 32 (10) ◽

pp. 1084-1092 ◽

Author(s):

Franz R. Krueger

Keyword(s):

Surface Potential ◽

Mass Spectroscopy ◽

Fission Fragment ◽

Bound States ◽

Electron Plasma ◽

Molecular Ions ◽

Time Dependent ◽

Thermally Activated ◽

Fission Fragments ◽

The desorption of even big molecular ions after the passage of fission fragments is described by a short-lived collective perturbation of the surface potential, which is primarily caused by an excitation of the electron plasma. In secondary ion mass spectroscopy and laser induced desorption similar perturbations occur. These processes can be described microscopically as emission of thermally activated ions out of bound states by the time-dependent perturbation, and macroscopically as a temporary lowering of the electrochemical surface potential

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Development of secondary ion mass spectroscopy using medium energy C60 ion impact

Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms ◽

10.1016/j.nimb.2008.03.019 ◽

2008 ◽

Vol 266 (10) ◽

pp. 2450-2452 ◽

Author(s):

K. Hirata ◽

Y. Saitoh ◽

A. Chiba ◽

M. Adachi ◽

K. Yamada ◽

...

Keyword(s):

Mass Spectroscopy ◽

Medium Energy ◽

Secondary Ion Mass Spectroscopy ◽

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Effect of Point Defect Injection on B diffusion in C containing Si and SiGe

MRS Proceedings ◽

10.1557/proc-809-b8.6 ◽

2004 ◽

Vol 809 ◽

Author(s):

Mudith S. A. Karunaratne ◽

Janet M. Bonar ◽

Jing Zhang ◽

Arthur F. W. Willoughby

Keyword(s):

Computer Simulation ◽

Point Defect ◽

Mass Spectroscopy ◽

Diffusion Coefficients ◽

Secondary Ion Mass Spectroscopy ◽

Annealing Conditions ◽

Defect Injection ◽

Before And After ◽

ABSTRACTIn this paper, we compare B diffusion in epitaxial Si, Si with 0.1%C, SiGe with 11% Ge and SiGe:C with 11%Ge and 0.1%C at 1000°C under interstitial, vacancy and non-injection annealing conditions. Diffusion coefficients of B in each material were extracted by computer simulation, using secondary ion mass spectroscopy (SIMS) profiles obtained from samples before and after annealing.Interstitial injection enhances B diffusion considerably in all materials compared to inert annealing. In samples which experienced vacancy injection, B diffusion was suppressed. The results are consistent with the view that B diffusion in these materials occurs primarily via interstitialcy type defects.

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Secondary ion counting for surface-sensitive chemical analysis of organic compounds using time-of-flight secondary ion mass spectroscopy with cluster ion impact ionization

Review of Scientific Instruments ◽

10.1063/1.3541799 ◽

2011 ◽

Vol 82 (3) ◽

pp. 033101 ◽

Author(s):

K. Hirata ◽

Y. Saitoh ◽

A. Chiba ◽

K. Yamada ◽

Y. Takahashi ◽

...

Keyword(s):

Chemical Analysis ◽

Organic Compounds ◽

Mass Spectroscopy ◽

Impact Ionization ◽

Time Of Flight ◽

Secondary Ion Mass Spectroscopy ◽

Cluster Ion ◽

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Quantification of nitrogen impurity and estimated Orowan strengthening through secondary ion mass spectroscopy in aluminum cryomilled for extended durations

Materials Science and Engineering A ◽

10.1016/j.msea.2015.09.007 ◽

2015 ◽

Vol 648 ◽

pp. 412-417 ◽

Author(s):

Clara Hofmeister ◽

Mikhail Klimov ◽

Tim Deleghanty ◽

Kyu Cho ◽

Yongho Sohn

Keyword(s):

Mass Spectroscopy ◽

Secondary Ion Mass Spectroscopy ◽

Nitrogen Impurity ◽

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Carbon Enhancement of SiO[sub 2] Nucleation in Buried Oxide Synthesis Computer Simulations and Secondary Ion Mass Spectroscopy Depth Profiling

Journal of The Electrochemical Society ◽

10.1149/1.1362550 ◽

2001 ◽

Vol 148 (5) ◽

pp. F92 ◽

Author(s):

A. A. Efremov ◽

V. G. Litovchenko ◽

G. Ph. Romanova ◽

A. V. Sarikov ◽

C. Claeys

Keyword(s):

Computer Simulations ◽

Mass Spectroscopy ◽

Depth Profiling ◽

Secondary Ion Mass Spectroscopy ◽

Buried Oxide ◽

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Development of environmental scanning electron microscopy electron beam profile imaging with self-assembled monolayers and secondary ion mass spectroscopy

Scanning ◽

10.1002/sca.4950190202 ◽

1997 ◽

Vol 19 (2) ◽

pp. 71-74 ◽

Author(s):

Scott Wight ◽

Greg Gillen ◽

Tonya Herne

Keyword(s):

Electron Microscopy ◽

Scanning Electron Microscopy ◽

Electron Beam ◽

Mass Spectroscopy ◽

Environmental Scanning Electron Microscopy ◽

Self Assembled Monolayers ◽

Environmental Scanning ◽

Assembled Monolayers ◽

Secondary Ion ◽

Scanning Electron

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Metal—Polyimide Interfaces Characterized by Secondary Ion Mass Spectroscopy

ACS Symposium Series - Metallization of Polymers ◽

10.1021/bk-1990-0440.ch022 ◽

1990 ◽

pp. 297-311 ◽

Author(s):

B. K. Furman ◽

S. Purushothaman ◽

E. Castellani ◽

S. Renick ◽

D. Neugroshl

Keyword(s):

Mass Spectroscopy ◽

Secondary Ion Mass Spectroscopy ◽

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Comparative study of the oxidation of thin porous silicon layers studied by reflectometry, spectroscopic ellipsometry and secondary ion mass spectroscopy

Journal of Luminescence ◽

10.1016/s0022-2313(98)00086-6 ◽

1998 ◽

Vol 80 (1-4) ◽

pp. 147-152 ◽

Author(s):

M Fried ◽

O Polgár ◽

T Lohner ◽

S Strehlke ◽

C Levy-Clement

Keyword(s):

Porous Silicon ◽

Comparative Study ◽

Mass Spectroscopy ◽

Spectroscopic Ellipsometry ◽

Secondary Ion Mass Spectroscopy ◽

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Intermolecular rovibrational bound states of H2O H2 dimer from a MultiConfiguration Time Dependent Hartree approach

Chemical Physics Letters ◽

10.1016/j.cplett.2018.11.035 ◽

2019 ◽

Vol 715 ◽

pp. 347-353 ◽

Author(s):

Steve A. Ndengué ◽

Yohann Scribano ◽

David M. Benoit ◽

Fabien Gatti ◽

Richard Dawes

Keyword(s):

Bound States ◽

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Cr diffusion inα-Al2O3: Secondary ion mass spectroscopy and first-principles study

Physical Review B ◽

10.1103/physrevb.82.174302 ◽

2010 ◽

Vol 82 (17) ◽

Author(s):

Nobuaki Takahashi ◽

Teruyasu Mizoguchi ◽

Tsubasa Nakagawa ◽

Tetsuya Tohei ◽

Isao Sakaguchi ◽

...

Keyword(s):

Mass Spectroscopy ◽

First Principles ◽

Secondary Ion Mass Spectroscopy ◽

First Principles Study ◽

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