The Separation of Fe from Ga to Produce Ultrapure 67Ga

The production of 67Ga at iThemba LABS is performed by the proton bombardment of a tandem natZn/natZn target. 67Ga is separated from the target material using a method based on target dissolution, in acidic media, and dual chromatographic methods on Amberchrom CG-161M. The result is a product with a high radionuclidic purity 67Ga having such a low Fe content in the final product that it may be used in the labelling of peptides.

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Atomic orientation effects in proton stopping at low velocity

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100077116 ◽

1983 ◽

Vol 41 ◽

pp. 708-709

Author(s):

Kin Lam

Keyword(s):

Polycrystalline Material ◽

Charged Particles ◽

Target Material ◽

Stopping Power ◽

Low Velocity ◽

Electronic Density ◽

Interatomic Distances ◽

Frame Work ◽

Image Position ◽

Atomic Orientation

The energy of moving ions in solid is dependent on the electronic density as well as the atomic structural properties of the target material. These factors contribute to the observable effects in polycrystalline material using the scanning ion microscope. Here we outline a method to investigate the dependence of low velocity proton stopping on interatomic distances and orientations.The interaction of charged particles with atoms in the frame work of the Fermi gas model was proposed by Lindhard. For a system of atoms, the electronic Lindhard stopping power can be generalized to the formwhere the stopping power function is defined as

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Spatially Resolved Photoelectron Spectroscopy: Recent Progress and Future Plans

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s042482010013554x ◽

1990 ◽

Vol 48 (2) ◽

pp. 388-389

Author(s):

A. M. Bradshaw

Keyword(s):

Photoelectron Spectroscopy ◽

Chemical Reactivity ◽

Target Material ◽

Orbital Energy ◽

Light Sources ◽

Analytical Technique ◽

Hartree Fock ◽

Spatially Resolved ◽

Koopmans Theorem ◽

Surface Analytical Technique

X-ray photoelectron spectroscopy (XPS or ESCA) was not developed by Siegbahn and co-workers as a surface analytical technique, but rather as a general probe of electronic structure and chemical reactivity. The method is based on the phenomenon of photoionisation: The absorption of monochromatic radiation in the target material (free atoms, molecules, solids or liquids) causes electrons to be injected into the vacuum continuum. Pseudo-monochromatic laboratory light sources (e.g. AlKα) have mostly been used hitherto for this excitation; in recent years synchrotron radiation has become increasingly important. A kinetic energy analysis of the so-called photoelectrons gives rise to a spectrum which consists of a series of lines corresponding to each discrete core and valence level of the system. The measured binding energy, EB, given by EB = hv−EK, where EK is the kineticenergy relative to the vacuum level, may be equated with the orbital energy derived from a Hartree-Fock SCF calculation of the system under consideration (Koopmans theorem).

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Contribution of x-ray total reflection to the background intensity in EPMA

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100134600 ◽

1990 ◽

Vol 48 (2) ◽

pp. 202-203

Author(s):

Werner P. Rehbach ◽

Peter Karduck

Keyword(s):

Atomic Number ◽

Target Material ◽

Total Reflection ◽

Background Intensity ◽

X Rays ◽

Characteristic Radiation ◽

X Ray

In the EPMA of soft x rays anomalies in the background are found for several elements. In the literature extremely high backgrounds in the region of the OKα line are reported for C, Al, Si, Mo, and Zr. We found the same effect also for Boron (Fig. 1). For small glancing angles θ, the background measured using a LdSte crystal is significantly higher for B compared with BN and C, although the latter are of higher atomic number. It would be expected, that , characteristic radiation missing, the background IB (bremsstrahlung) is proportional Zn by variation of the atomic number of the target material. According to Kramers n has the value of unity, whereas Rao-Sahib and Wittry proposed values between 1.12 and 1.38 , depending on Z, E and Eo. In all cases IB should increase with increasing atomic number Z. The measured values are in discrepancy with the expected ones.

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Specimen Preparation of Near Surface Ion Irradiated Samples

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100117820 ◽

1985 ◽

Vol 43 ◽

pp. 170-171

Author(s):

K. F. Russell ◽

L. L. Horton

Keyword(s):

Radiation Damage ◽

Heavy Ions ◽

Target Material ◽

Metal Alloys ◽

Specimen Surface ◽

Specimen Preparation ◽

Particle Accelerators ◽

Near Surface ◽

Graaff Accelerator ◽

Van De Graaff

Beams of heavy ions from particle accelerators are used to produce radiation damage in metal alloys. The damaged layer extends several microns below the surface of the specimen with the maximum damage and depth dependent upon the energy of the ions, type of ions, and target material. Using 4 MeV heavy ions from a Van de Graaff accelerator causes peak damage approximately 1 μm below the specimen surface. To study this area, it is necessary to remove a thickness of approximately 1 μm of damaged metal from the surface (referred to as “sectioning“) and to electropolish this region to electron transparency from the unirradiated surface (referred to as “backthinning“). We have developed electropolishing techniques to obtain electron transparent regions at any depth below the surface of a standard TEM disk. These techniques may be applied wherever TEM information is needed at a specific subsurface position.

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{10} edge dislocations in YSZ films grown on (100)MgO by PLD

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100170384 ◽

1994 ◽

Vol 52 ◽

pp. 530-531

Author(s):

Jason R. Heffelfinger ◽

C. Barry Carter

Keyword(s):

Thin Films ◽

Semiconductor Lasers ◽

Vapor Deposition ◽

Substrate Surface ◽

Laser System ◽

Average Energy ◽

Target Material ◽

Chemical Vapor ◽

Buffer Layers ◽

Organic Chemical

Yttria-stabilized zirconia (YSZ) is currently used in a variety of applications including oxygen sensors, fuel cells, coatings for semiconductor lasers, and buffer layers for high-temperature superconducting films. Thin films of YSZ have been grown by metal-organic chemical vapor deposition, electrochemical vapor deposition, pulse-laser deposition (PLD), electron-beam evaporation, and sputtering. In this investigation, PLD was used to grow thin films of YSZ on (100) MgO substrates. This system proves to be an interesting example of relationships between interfaces and extrinsic dislocations in thin films of YSZ.In this experiment, a freshly cleaved (100) MgO substrate surface was prepared for deposition by cleaving a lmm-thick slice from a single-crystal MgO cube. The YSZ target material which contained 10mol% yttria was prepared from powders and sintered to 85% of theoretical density. The laser system used for the depositions was a Lambda Physik 210i excimer laser operating with KrF (λ=248nm, 1Hz repetition rate, average energy per pulse of 100mJ).

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