Crystal structure and temperature-dependent properties of Na2H4Ga2GeO8 – a novel gallogermanate

2020 ◽  
Vol 75 (9-10) ◽  
pp. 805-813
Author(s):  
Irma Peschke ◽  
Lars Robben ◽  
Christof Köhler ◽  
Thomas Frauenheim ◽  
Josef-Christian Buhl ◽  
...  

AbstractSynthesis, crystal structure and temperature-dependent behavior of Na2H4Ga2GeO8 are reported. This novel gallogermanate crystallizes in space group I41/acd with room-temperature powder diffraction lattice parameters of a = 1298.05(1) pm and c = 870.66(1) pm. The structure consists of MO4 (M = Ga, Ge) tetrahedra in four-ring chains, which are connected by two different (left- and right-handed) helical chains of NaO6 octahedra. Protons coordinating the oxygen atoms of the GaO4 tetrahedra not linked to germanium atoms ensure the charge balance. Structure solution and refinement are based on single crystal X-ray diffraction measurements. Proton positions are estimated using a combined approach of DFT calculations and NMR, FTIR and Raman spectroscopic techniques. The thermal expansion was examined in the range between T = 20(2) K and the compound’s decomposition temperature at 568(5) K, in which no phase transition could be observed, and Debye temperatures of 266(11) and 1566(65) K were determined for the volume expansion.

ACS Omega ◽  
2021 ◽  
Author(s):  
Khagendra Baral ◽  
Saro San ◽  
Ridwan Sakidja ◽  
Adrien Couet ◽  
Kumar Sridharan ◽  
...  

Materials ◽  
2021 ◽  
Vol 14 (12) ◽  
pp. 3222
Author(s):  
Kamil Goc ◽  
Janusz Przewoźnik ◽  
Katarzyna Witulska ◽  
Leszek Chlubny ◽  
Waldemar Tokarz ◽  
...  

A study of Ti3Al1−xSixC2 (x = 0 to x = 1) MAX-phase alloys is reported. The materials were obtained from mixtures of Ti3AlC2 and Ti3SiC2 powders with hot pressing sintering technique. They were characterised with X-ray diffraction, heat capacity, electrical resistivity, and magnetoresistance measurements. The results show a good quality crystal structure and metallic properties with high residual resistivity. The resistivity weakly varies with Si doping and shows a small, positive magnetoresistance effect. The magnetoresistance exhibits a quadratic dependence on the magnetic field, which indicates a dominant contribution from open electronic orbits. The Debye temperatures and Sommerfeld coefficient values derived from specific heat data show slight variations with Si content, with decreasing tendency for the former and an increase for the latter. Experimental results were supported by band structure calculations whose results are consistent with the experiment concerning specific heat, resistivity, and magnetoresistance measurements. In particular, they reveal that of the s-electrons at the Fermi level, those of Al and Si have prevailing density of states and, thus predominantly contribute to the metallic conductivity. This also shows that the high residual resistivity of the materials studied is an intrinsic effect, not due to defects of the crystal structure.


2020 ◽  
Vol 235 (6-7) ◽  
pp. 213-223
Author(s):  
Hilke Petersen ◽  
Lars Robben ◽  
Thorsten M. Gesing

AbstractThe temperature-dependent structure-property relationships of the aluminosilicate perrhenate sodalite |Na8(ReO4)2|[AlSiO4]6 (ReO4-SOD) were analysed via powder X-ray diffraction (PXRD), Raman spectroscopy and heat capacity measurements. ReO4-SOD shows two phase transitions in the investigated temperature range (13 K < T < 1480 K). The first one at 218.6(1) K is correlated to the transition of dynamically ordered $P\overline{4}3n$ (> 218.6(1 K) to a statically disordered (<218.6(1) K) SOD template in $P\overline{4}3n$. The loss of the dynamics of the template anion during cooling causes an increase of disorder, indicated by an unusual intensity decrease of the 011-reflection and an increase of the Re-O2 bond length with decreasing temperature. Additionally, Raman spectroscopy shows a distortion of the ReO4 anion. Upon heating the thermal expansion of the sodalite cage originated in the tilt-mechanism causes the second phase transition at 442(1) K resulting in a symmetry-increase from $P\overline{4}3n$ to $Pm\overline{3}n$, the structure with the sodalites full framework expansion. Noteworthy is the high decomposition temperature of 1320(10) K.


Author(s):  
Mohamed Abdelsabour Fahmy

AbstractThe main aim of this article is to develop a new boundary element method (BEM) algorithm to model and simulate the nonlinear thermal stresses problems in micropolar functionally graded anisotropic (FGA) composites with temperature-dependent properties. Some inside points are chosen to treat the nonlinear terms and domain integrals. An integral formulation which is based on the use of Kirchhoff transformation is firstly used to simplify the transient heat conduction governing equation. Then, the residual nonlinear terms are carried out within the current formulation. The domain integrals can be effectively treated by applying the Cartesian transformation method (CTM). In the proposed BEM technique, the nonlinear temperature is computed on the boundary and some inside domain integral. Then, nonlinear displacement can be calculated at each time step. With the calculated temperature and displacement distributions, we can obtain the values of nonlinear thermal stresses. The efficiency of our proposed methodology has been improved by using the communication-avoiding versions of the Arnoldi (CA-Arnoldi) preconditioner for solving the resulting linear systems arising from the BEM to reduce the iterations number and computation time. The numerical outcomes establish the influence of temperature-dependent properties on the nonlinear temperature distribution, and investigate the effect of the functionally graded parameter on the nonlinear displacements and thermal stresses, through the micropolar FGA composites with temperature-dependent properties. These numerical outcomes also confirm the validity, precision and effectiveness of the proposed modeling and simulation methodology.


AIP Advances ◽  
2017 ◽  
Vol 7 (3) ◽  
pp. 035206
Author(s):  
P. L. Fulmek ◽  
P. Haumer ◽  
F. P. Wenzl ◽  
W. Nemitz ◽  
J. Nicolics

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