High Temperature Life Prediction of Monolithic Silicon Carbide Heat Exchanger Tubes

Author(s):  
JB Sandifer ◽  
MJ Edwards ◽  
TS Brown ◽  
SF Duffy
Author(s):  
Merrill A. Wilson ◽  
Kurt Recknagle ◽  
Kriston Brooks

Typically, ceramic micro-channel devices are used for high temperature heat exchangers, catalytic reactors, electronics cooling, and processing of corrosive streams where the thermomechanical benefits of ceramic materials are desired. These benefits include: high temperature mechanical and corrosion properties and tailorable material properties such as thermal expansion, electrical conductivity and thermal conductivity. In addition, by utilizing Laminated Object Manufacturing (LOM) methods, inexpensive ceramic materials can be layered, featured and laminated in the green state and co-sintered to form monolithic structures amenable to mass production. In cooperation with the DOE and Pacific Northwest National Labs, silicon carbide (SiC) based micro-channel recuperator concepts are being developed and tested. The performance benefits of a high temperature, micro-channel heat exchanger are realized from the improved thermal efficiency of the high temperature cycles and the improved effectiveness of micro-channels for heat transfer. In designing these structures, the heat and mass transfer within the micro-channels are being analyzed with heat transfer models, computational fluid dynamics models and validated with experimental results. As an example, a typical micro-turbine cycle was modified and modeled to incorporate this ceramic recuperator and it was found that the overall thermal efficiency of the micro-turbine could be improved from about 27% to over 40%. Process improvements require technical advantages and cost advantages. These LOM methodologies have been based on well-proven industry standard processes where labor, throughput and capital estimates have been tested. Following these cost models and validation at the prototype scale, cost estimates were obtained. For the micro-turbine example, cost estimates indicate that the high-temperature SiC recuperator would cost about $200 per kWe. The development of these heat exchangers is multi-faceted and this paper focuses on the design optimization of a layered micro-channel heat exchanger, its performance testing, and fabrication development through LOM methodologies.


2003 ◽  
Author(s):  
Merrill A. Wilson ◽  
Steven M. Quist

Efficiency and emissions of advanced gas turbine power cycles can be improved by incorporating high-temperature ceramic heat exchangers (see Figure 1). In cooperation with the DOE, preliminary development and testing of SiC based structures has been completed. This program has focused on four initial areas: thermo-mechanical degradation as a function of the chemical operating environments, design of a layered microchannel heat exchanger, thermo-mechanical testing and analysis of these structures, and fabrication development through rapid prototyping techniques.


Alloy Digest ◽  
1994 ◽  
Vol 43 (10) ◽  

Abstract Duralcan F3S.xxS is a heat treatable aluminum alloy-matrix gravity composite. The base alloy is similar to Aluminum 359 (Alloy Digest Al-188, July 1969); the discontinuously reinforced composite is silicon carbide. This datasheet provides information on composition, physical properties, hardness, elasticity, tensile properties, and compressive strength as well as fracture toughness and fatigue. It also includes information on high temperature performance. Filing Code: AL-329. Producer or source: Alcan Aluminum Corporation.


2000 ◽  
Vol 622 ◽  
Author(s):  
Liang-Yu Chen ◽  
Gary W. Hunter ◽  
Philip G. Neudeck

ABSTRACTSingle crystal silicon carbide (SiC) has such excellent physical, chemical, and electronic properties that SiC based semiconductor electronics can operate at temperatures in excess of 600°C well beyond the high temperature limit for Si based semiconductor devices. SiC semiconductor devices have been demonstrated to be operable at temperatures as high as 600°C, but only in a probe-station environment partially because suitable packaging technology for high temperature (500°C and beyond) devices is still in development. One of the core technologies necessary for high temperature electronic packaging is semiconductor die-attach with low and stable electrical resistance. This paper discusses a low resistance die-attach method and the results of testing carried out at both room temperature and 500°C in air. A 1 mm2 SiC Schottky diode die was attached to aluminum nitride (AlN) and 96% pure alumina ceramic substrates using precious metal based thick-film material. The attached test die using this scheme survived both electronically and mechanically performance and stability tests at 500°C in oxidizing environment of air for 550 hours. The upper limit of electrical resistance of the die-attach interface estimated by forward I-V curves of an attached diode before and during heat treatment indicated stable and low attach-resistance at both room-temperature and 500°C over the entire 550 hours test period. The future durability tests are also discussed.


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