High Resolution Transmission Electron Microscopy of Proton Implanted Gallium Arsenide
Keyword(s):
AbstractHigh resolution transmission electron microscopy (HRTEM) has been performed on cross-sectional specimens from high dose (1016 cm−2) H+ implanted (100) GaAs (300 keV at room temperature). It was found that annealing at 500°C created small (20-50Å) loops on {111} near the projected range (Rp)(3.2 μm). At 550-600°C, voids surrounded by stacking faults, microtwins and perfect dislocations were observed near the Rp. A phenomenological model explaining the observed results is proposed.
2001 ◽
Vol 50
(6)
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pp. 541-544
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2010 ◽
Vol 09
(01n02)
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pp. 75-81
1989 ◽
Vol 224
(1-3)
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pp. L956-L964
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