scholarly journals UV irradiation effect on the electrical properties of Pb2MoO5 single crystal

2018 ◽  
Vol 26 (2) ◽  
pp. 63-66
Author(s):  
I. P. Volnyanskaya ◽  
M. P. Trubitsyn ◽  
D. M. Volnianskii ◽  
D. S. Bondar
Keyword(s):  
Electrical Properties ◽  
Single Crystal ◽  
Uv Irradiation ◽  
Room Temperature ◽  
Uv Light ◽  
Dipole Moments ◽  
Irradiation Effect ◽  
Deep Traps ◽  
Temperature Dependences ◽  
Ac Field

Electrical properties of Pb2MoO5 single crystal were studied in AC field (f=1 kHz) after irradiation with UV light (290 K). It was found that UV irradiation caused appearance of maximums on permittivity ε and conductivity σ temperature dependences, which were observed around 530 K. The anomalies of ε and σ vanished after annealing at 700 K and could be restored by subsequent UV irradiation performed at room temperature. The magnitude of ε and σ peaks increased for higher exposition time. Above 600 K conductivity σ was practically independent on irradiation. It is proposed that photoelectrons induced by UV light, are trapped by Mo located -within the oxygen tetrahedrons with vacancy VO in one of the vertexes. The dipole moments of (MoO3) groups reorient at VO hopping through the tetrahedron vertexes. Annealing at 700 K thermally decomposes (MoO3)- complexes. For T>600 K behavior of σ(T) is determined by conduction currents and nearly insensitive to UV irradiation. At high temperatures the photoelectrons do not contribute to conductivity since they are bound in (MoO3)- centers, recombine with holes or re-captured by more deep traps.

UV-Light Irradiation Effect on Room-Temperature-Processed ZnO/p-Si

2007 ◽  
Vol 51 (12) ◽  
pp. 115 ◽  
Author(s):  
Yu-Jin KANG ◽  
Chea-Ryong CHO ◽  
Se-Young JEONG ◽  
Hong-Seung KIM ◽  
Hyung-Soo AHN
Keyword(s):  
Room Temperature ◽  
Uv Light ◽  
Light Irradiation ◽  
Irradiation Effect ◽  
Uv Light Irradiation

scholarly journals Enhanced Humidity Sensing Response of SnO2/Silicon Nanopillar Array by UV Irradiation

Sensors ◽  
2019 ◽  
Vol 19 (9) ◽  
pp. 2141 ◽  
Author(s):  
Wei Li ◽  
Linlin Wang ◽  
Yun Cai ◽  
Peifeng Pan ◽  
Jinze Li ◽  
...  
Keyword(s):  
Magnetron Sputtering ◽  
Response Time ◽  
Specific Surface ◽  
Uv Irradiation ◽  
Recovery Time ◽  
Room Temperature ◽  
Uv Light ◽  
Humidity Sensing ◽  
Potential Applications ◽  
Humidity Sensitivity

In this work, a silicon nanopillar array was created with nanosphere lithography. SnO2 film was deposited on this nanostructure by magnetron sputtering to form an SnO2/silicon nanopillar array sensor. The humidity sensitivity, response time, and recovery time were all measured at room temperature (25 °C) with UV or without UV irradiation. As a result, the humidity sensitivity properties were improved by enlarging the specific surface area with ordered nanopillars and irradiating with UV light. These results indicate that nanostructure sensors have potential applications in the field of sensors.

TEMPERATURE DEPENDENCES OF Y2Cu2O5 ESR SPECTRA

1989 ◽  
Vol 03 (05) ◽  
pp. 427-435 ◽  
Author(s):  
A.A. GIPPIUS ◽  
V.V. MOSHCHALKOV ◽  
YU. A. KOKSHAROV ◽  
A.N. TIKHONOV ◽  
B.V. MILL ◽  
...  
Keyword(s):  
Magnetic Fields ◽  
Single Crystal ◽  
Room Temperature ◽  
Esr Spectra ◽  
Single Line ◽  
Néel Temperature ◽  
Esr Spectrum ◽  
Complicated Form ◽  
Temperature Dependences ◽  
G Factors

Temperature dependences of the ESR spectrum in Y 2 Cu 2 O 5 compound are studied for both polycrystalline and single crystal samples. The g-factors along the main axes are found to be ga=2.099, gb=2.048, and gc=2.21 at room temperature, T=293 K . As temperature decreases, the linewidth ΔH increases in agreement with the Huber’s formula ΔH=A(T N /(T−T N ))β+B(θ/T+1) with the following parameters: A=1513±10 Oe , B=509±10 Oe , T N =7±1 K , θ=18±2 K , β=1.3±0.3. In the vicinity of the Neel Temperature, T N , the ESR spectrum has a very complicated form indicating the existence of clusters with different internal magnetic fields. Below T N , a single line symmetrical ESR spectrum is recovered.

scholarly journals Optical and Electrical Properties of Undoped Microcrystalline Silicon Deposited by the VHF-GD with Different Dilutions of Silane in Hydrogen

1996 ◽  
Vol 452 ◽  
Author(s):  
N. Beck ◽  
P. Orres ◽  
J. Fric ◽  
Z. Remeš ◽  
A. Poruba ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Room Temperature ◽  
Crystalline Silicon ◽  
Time Of Flight ◽  
Optical And Electrical Properties ◽  
Microcrystalline Silicon ◽  
Transient Time ◽  
Deep Traps ◽  
Flight Measurements ◽  
Strong Dilution

AbstractWe show that the optical and electrical properties of microcrystalline silicon (μc-Si:H) deposited by the VHF-GD technique at 110 MHz can considerably be tuned by changing the dilution ratio of silane to hydrogen.With increasing silane dilution we observe enhanced optical absorption for energies below 2 eV due to the transition of the material from amorphous / microcrystalline mixture to a pure microcrystalline phase. Simultaneously, the light scattering and the defect absorption increases. Strong dilution also promotes the incorporation of impurities into the material, leading to a pronounced extrinsic behaviour as seen from the decrease of the activiation energy of the electrical conductivity.The electrical properties were investigated in the dark by the Time of Flight technique. We measured drift mobilities at room temperature which slightly increase with dilution, reaching values of 3 cm2/Vs for electrons and 1.2 cm2/Vs for holes. The ratio between electron and hole drift mobilities is found to be around 2 for all samples studied, similar to that of crystalline silicon.Furthermore, post-transient Time of Flight measurements revealed detrimental electron deep traps in low dilution material.

Novel Approach for Improving Interface Quality of 4H-SiC MOS Devices with UV Irradiation and Subsequent Thermal Annealing

2013 ◽  
Vol 740-742 ◽  
pp. 741-744 ◽  
Author(s):  
Heiji Watanabe ◽  
Daisuke Ikeguchi ◽  
Takashi Kirino ◽  
Shuhei Mitani ◽  
Yuki Nakano ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Thermal Annealing ◽  
Uv Irradiation ◽  
Uv Light ◽  
Interface State ◽  
State Density ◽  
Mos Devices ◽  
Novel Approach ◽  
Subsequent Thermal Annealing ◽  
Thermally Grown

We report on the harmful impact of ultraviolet (UV) light irradiation on thermally grown SiO2/4H-SiC(0001) structures and its use in subsequent thermal annealing for improving electrical properties of SiC-MOS devices. As we previously reported [1], significant UV-induced damage, such as positive flatband voltage shift and hysteresis in capacitance-voltage curves as well as increased interface state density, was observed for SiC-MOS devices with thermally grown oxides. Interestingly, the subsequent annealing of damaged SiO2/SiC samples resulted in superior electrical properties to those for untreated (fresh) devices. These findings imply that UV irradiation of the SiO2/SiC structure is effective for eliciting pre-existing carbon-related defects and transforming them into a simple configuration that can be easily passivated by thermal treatment.

scholarly journals Giant forced magnetostriction in Tb0.2Gd0.8 single crystal

2018 ◽  
Vol 185 ◽  
pp. 04015
Author(s):  
Sergey Nikitin ◽  
Tatiana Ivanova ◽  
Alexey Zvonov ◽  
Krzysztof Rogacki ◽  
Yurii Koshkid'ko ◽  
...  
Keyword(s):  
Magnetic Fields ◽  
Single Crystal ◽  
Temperature Region ◽  
Room Temperature ◽  
Temperature Dependences

The results of investigation of the Tb0.2Gd0.8 single crystal forced magnetostriction are presented. Temperature dependences of magnetostriction have been measured from 4 to 300°K in applied magnetic fields up to 14 T. The giant field induced magnetostriction ~ 1.5•10-3 was discovered in the room temperature region in magnetic fields up to 14 T.

scholarly journals Photoreductive synthesis of monodispersed Au nanoparticles with citric acid as reductant and surface stabilizing reagent

RSC Advances ◽  
2017 ◽  
Vol 7 (11) ◽  
pp. 6187-6192 ◽  
Author(s):  
Yasuhiro Shiraishi ◽  
Haruki Tanaka ◽  
Hirokatsu Sakamoto ◽  
Satoshi Ichikawa ◽  
Takayuki Hirai
Keyword(s):  
Citric Acid ◽  
Uv Irradiation ◽  
Room Temperature ◽  
Au Nanoparticles ◽  
Uv Light

UV irradiation of water containing HAuCl4 and citric acid at room temperature successfully produces monodispersed Au nanoparticles. The size of Au particles is easily tuned by the intensity of UV light and the amount of citric acid.

Investigation of ZnO Based Thin Films as Resistance Materials with Small Temperature Coefficients

2006 ◽  
Vol 45 ◽  
pp. 2376-2381
Author(s):  
Yuichi Sato ◽  
Makoto Goto ◽  
Junji Ikeda ◽  
Yusuke Minakawa ◽  
Susumu Sato
Keyword(s):  
Thin Films ◽  
Single Crystal ◽  
Quartz Glass ◽  
Room Temperature ◽  
Small Temperature ◽  
Glass Substrates ◽  
Temperature Coefficients ◽  
Temperature Dependences

Possibilities of ZnO based thin films for applications as resistance materials with small temperature coefficients are investigated. The ZnO based thin films containing Cu, Mg, Al and In are deposited on sapphire c-face single crystal substrates or quartz glass substrates. Resistivities at room temperature and their temperature dependences of the obtained thin films are measured and discussed.

scholarly journals High-Dose Electron Radiation and Unexpected Room-Temperature Self-Healing of Epitaxial SiC Schottky Barrier Diodes

Nanomaterials ◽  
2019 ◽  
Vol 9 (2) ◽  
pp. 194 ◽  
Author(s):  
Guixia Yang ◽  
Yuanlong Pang ◽  
Yuqing Yang ◽  
Jianyong Liu ◽  
Shuming Peng ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Schottky Barrier ◽  
Room Temperature ◽  
Radiation Detectors ◽  
High Dose ◽  
Irradiation Effect ◽  
Self Healing ◽  
Schottky Barrier Diodes ◽  
Induced Current ◽  
On Line

Silicon carbide (SiC) has been widely used for electronic radiation detectors and atomic battery sensors. However, the physical properties of SiC exposure to high-dose irradiation as well as its related electrical responses are not yet well understood. Meanwhile, the current research in this field are generally focused on electrical properties and defects formation, which are not suitable to explain the intrinsic response of irradiation effect since defect itself is not easy to characterize, and it is complex to determine whether it comes from the raw material or exists only upon irradiation. Therefore, a more straightforward quantification of irradiation effect is needed to establish the direct correlation between irradiation-induced current and the radiation fluence. This work reports the on-line electrical properties of 4H-SiC Schottky barrier diodes (SBDs) under high-dose electron irradiation and employs in situ noise diagnostic analysis to demonstrate the correlation of irradiation-induced defects and microscopic electronic properties. It is found that the electron beam has a strong radiation destructive effect on 4H-SiC SBDs. The on-line electron-induced current and noise information reveal a self-healing like procedure, in which the internal defects of the devices are likely to be annealed at room temperature and devices’ performance is restored to some extent.

scholarly journals Effect of localized UV irradiation on the crystallinity and electrical properties of dip-coated polythiophene thin films

RSC Advances ◽  
2020 ◽  
Vol 10 (56) ◽  
pp. 34130-34136
Author(s):  
So Young Park ◽  
Eun Hye Kwon ◽  
Yeong Don Park
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Uv Irradiation ◽  
Uv Light ◽  
P3ht Film ◽  
Enhanced Crystallinity

When the top part of the solution was irradiated with UV light, the dip-coated P3HT film showed enhanced crystallinity and electrical properties.

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