In-line Monitoring of Grain Size Distribution of Channel Poly Si used in 3D NAND Flash Memory Devices using Multiwavelength Raman Spectroscopy

MRS Advances ◽  
2016 ◽  
Vol 1 (5) ◽  
pp. 339-348 ◽  
Author(s):  
Noh Yeal Kwak ◽  
Chul Young Ham ◽  
Min Sung Ko ◽  
Sung Chul Shin ◽  
Seung Jin Yeom ◽  
...  
Keyword(s):  
Raman Spectroscopy ◽  
Grain Size ◽  
Size Distribution ◽  
Grain Size Distribution ◽  
Flash Memory ◽  
Memory Devices ◽  
Nand Flash ◽  
Nand Flash Memory ◽  
Cross Sectional ◽  
Monitoring Technique

ABSTRACTFeasibility of multiwavelength Raman spectroscopy was studied as a potential in-line monitoring technique for grain size distribution in channel poly-Si used in three dimensional stacked NAND (3D NAND) Flash memory devices. Various channel poly-Si materials in 3D-NAND Flash memory devices, converted from chemical vapor deposition (CVD) grown a-Si, were characterized using non-contact, multiwavelength Raman spectroscopy and high resolution cross-sectional transmission electron microscopy (HRXTEM). The Raman characterization results were compared with HRXTEM images. The correlation between the grain size distribution characterized by multiwavelength Raman spectroscopy and “on current” (ION) of 3D NAND Flash memory devices was investigated. Good correlation between these techniques was seen. Multiwavelength Raman spectroscopy is very promising as a non-destructive in-line monitoring technique for grain size distribution in channel poly-Si used in 3D NAND Flash memory devices.

Garbage Collection Algorithms for NAND Flash Memory Devices -- An Overview

2013 ◽  
Author(s):  
Raja Subramani ◽  
Haritima Swapnil ◽  
Niharika Thakur ◽  
Bharath Radhakrishnan ◽  
Krishnamurthy Puttaiah
Keyword(s):  
Flash Memory ◽  
Garbage Collection ◽  
Memory Devices ◽  
Nand Flash ◽  
Nand Flash Memory

Nanophotonic identification of defects buried in three-dimensional NAND flash memory devices

2018 ◽  
Vol 1 (1) ◽  
pp. 60-67 ◽  
Author(s):  
Jae Woong Yoon ◽  
Seong-Min Ma ◽  
Gun Pyo Kim ◽  
Yoonshik Kang ◽  
Joonseong Hahn ◽  
...  
Keyword(s):  
Flash Memory ◽  
Three Dimensional ◽  
Memory Devices ◽  
Nand Flash ◽  
Nand Flash Memory

Nondestructive assessment of the grain size distribution of SnO2 nanoparticles by low-frequency Raman spectroscopy

1997 ◽  
Vol 71 (14) ◽  
pp. 1957-1959 ◽  
Author(s):  
Angel Diéguez ◽  
Albert Romano-Rodrı́guez ◽  
Juan Ramón Morante ◽  
Nicolae Bârsan ◽  
Udo Weimar ◽  
...  
Keyword(s):  
Raman Spectroscopy ◽  
Grain Size ◽  
Size Distribution ◽  
Grain Size Distribution ◽  
Sno2 Nanoparticles ◽  
Low Frequency

scholarly journals Estimation of Bed Load Transport in River Osun, South-Western of Nigeria Using Grain Size Distribution Data

2020 ◽  
Vol 2 (2) ◽  
Author(s):  
O.S. Olaniyan
Keyword(s):  
Grain Size ◽  
Size Distribution ◽  
Grain Size Distribution ◽  
Bedload Transport ◽  
Cross Sectional Area ◽  
Sediment Supply ◽  
Distribution Data ◽  
Sectional Area ◽  
Cross Sectional ◽  
Standard Methods

Sediment transport rate depends on bed composition, flow hydraulics and sediment supply. There is a paucity of information on bedload transport in River Osun. In this study, bedload in River Osun was estimated using grain size distribution data to predict channel migration and mitigate flooding. Grab sampler was used to collect sediment samples at the sampling point across the river designated as T1-T4. Sieve analysis was carried out in triplicate on sediment from sampling points using standard methods. Discharge and cross-sectional area were measured between December 2017 and December 2018 at sampling stations using standard methods. The seasonal and bedload were estimated using standards equations. The percentage of bed material particles above 5mm and less than or equal to 2mm were 50 and 22.49%, respectively. The average median grain (d50) size was 2.4mm. The discharge and cross-sectional area across River Osun ranged (0.53-17.46) m3/s and (3.83-47.46) m2. The seasonal suspended and bedload across the river were (206.43×103 kg/annum) and 2,538.77×103(kg/annum), respectively. The estimated sediment load of River Osun could be useful in determining the dredging period at any point across the river where deposition of sediment could be monitored.

scholarly journals Analysis and Optimization of Threshold Voltage Variability by Polysilicon Grain Size Simulation in 3D NAND Flash Memory

2020 ◽  
Vol 8 ◽  
pp. 140-144 ◽  
Author(s):  
Tao Yang ◽  
Zhiliang Xia ◽  
Dandan Shi ◽  
Yingjie Ouyang ◽  
Zongliang Huo
Keyword(s):  
Grain Size ◽  
Threshold Voltage ◽  
Flash Memory ◽  
Nand Flash ◽  
Nand Flash Memory

Analysis of the Correlation Between the Programmed Threshold-Voltage Distribution Spread of nand Flash Memory Devices and Floating-Gate Impurity Concentration

2011 ◽  
Vol 58 (11) ◽  
pp. 3712-3719 ◽  
Author(s):  
Riichiro Shirota ◽  
Yoshinori Sakamoto ◽  
Hung-Ming Hsueh ◽  
Jian-Ming Jaw ◽  
Wen-Chuan Chao ◽  
...  
Keyword(s):  
Threshold Voltage ◽  
Flash Memory ◽  
Impurity Concentration ◽  
Floating Gate ◽  
Memory Devices ◽  
Nand Flash ◽  
Voltage Distribution ◽  
Nand Flash Memory ◽  
Threshold Voltage Distribution
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