Nanophotonic identification of defects buried in three-dimensional NAND flash memory devices

2018 ◽  
Vol 1 (1) ◽  
pp. 60-67 ◽  
Author(s):  
Jae Woong Yoon ◽  
Seong-Min Ma ◽  
Gun Pyo Kim ◽  
Yoonshik Kang ◽  
Joonseong Hahn ◽  
...  
Keyword(s):  
Flash Memory ◽  
Three Dimensional ◽  
Memory Devices ◽  
Nand Flash ◽  
Nand Flash Memory

Novel Three Dimensional (3D) NAND Flash Memory Array Having Tied Bit-line and Ground Select Transistor (TiGer)

2012 ◽  
Vol E95.C (5) ◽  
pp. 837-841 ◽  
Author(s):  
Se Hwan PARK ◽  
Yoon KIM ◽  
Wandong KIM ◽  
Joo Yun SEO ◽  
Hyungjin KIM ◽  
...  
Keyword(s):  
Flash Memory ◽  
Three Dimensional ◽  
Nand Flash ◽  
Nand Flash Memory ◽  
Memory Array

Garbage Collection Algorithms for NAND Flash Memory Devices -- An Overview

2013 ◽  
Author(s):  
Raja Subramani ◽  
Haritima Swapnil ◽  
Niharika Thakur ◽  
Bharath Radhakrishnan ◽  
Krishnamurthy Puttaiah
Keyword(s):  
Flash Memory ◽  
Garbage Collection ◽  
Memory Devices ◽  
Nand Flash ◽  
Nand Flash Memory

Novel Concept of the Three-Dimensional Vertical FG nand Flash Memory Using the Separated-Sidewall Control Gate

2012 ◽  
Vol 59 (8) ◽  
pp. 2078-2084 ◽  
Author(s):  
Moon-Sik Seo ◽  
Bong-Hoon Lee ◽  
Sung-Kye Park ◽  
Tetsuo Endoh
Keyword(s):  
Flash Memory ◽  
Three Dimensional ◽  
Nand Flash ◽  
Nand Flash Memory ◽  
Novel Concept

In-line Monitoring of Grain Size Distribution of Channel Poly Si used in 3D NAND Flash Memory Devices using Multiwavelength Raman Spectroscopy

MRS Advances ◽  
2016 ◽  
Vol 1 (5) ◽  
pp. 339-348 ◽  
Author(s):  
Noh Yeal Kwak ◽  
Chul Young Ham ◽  
Min Sung Ko ◽  
Sung Chul Shin ◽  
Seung Jin Yeom ◽  
...  
Keyword(s):  
Raman Spectroscopy ◽  
Grain Size ◽  
Size Distribution ◽  
Grain Size Distribution ◽  
Flash Memory ◽  
Memory Devices ◽  
Nand Flash ◽  
Nand Flash Memory ◽  
Cross Sectional ◽  
Monitoring Technique

ABSTRACTFeasibility of multiwavelength Raman spectroscopy was studied as a potential in-line monitoring technique for grain size distribution in channel poly-Si used in three dimensional stacked NAND (3D NAND) Flash memory devices. Various channel poly-Si materials in 3D-NAND Flash memory devices, converted from chemical vapor deposition (CVD) grown a-Si, were characterized using non-contact, multiwavelength Raman spectroscopy and high resolution cross-sectional transmission electron microscopy (HRXTEM). The Raman characterization results were compared with HRXTEM images. The correlation between the grain size distribution characterized by multiwavelength Raman spectroscopy and “on current” (ION) of 3D NAND Flash memory devices was investigated. Good correlation between these techniques was seen. Multiwavelength Raman spectroscopy is very promising as a non-destructive in-line monitoring technique for grain size distribution in channel poly-Si used in 3D NAND Flash memory devices.

Suppression of Inhibit Cell Vth Disturbance in Three Dimensional Stack NAND Flash Memory

2013 ◽  
Vol 13 (9) ◽  
pp. 6382-6388 ◽  
Author(s):  
Byeong-In Choe ◽  
Byung-Gook Park ◽  
Jung-Kyu Lee ◽  
Jong-Ho Lee
Keyword(s):  
Flash Memory ◽  
Three Dimensional ◽  
Nand Flash ◽  
Nand Flash Memory
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