Garbage Collection Algorithms for NAND Flash Memory Devices -- An Overview

2013 ◽  
Author(s):  
Raja Subramani ◽  
Haritima Swapnil ◽  
Niharika Thakur ◽  
Bharath Radhakrishnan ◽  
Krishnamurthy Puttaiah
Keyword(s):  
Flash Memory ◽  
Garbage Collection ◽  
Memory Devices ◽  
Nand Flash ◽  
Nand Flash Memory

scholarly journals A Block Classification Method with Monitor and Restriction in NAND Flash memory

2021 ◽  
Vol 12 (5) ◽  
pp. 209-215
Author(s):  
Myungsub Lee
Keyword(s):  
Performance Evaluation ◽  
Standard Deviation ◽  
Flash Memory ◽  
Garbage Collection ◽  
Memory Systems ◽  
Nand Flash ◽  
Nand Flash Memory ◽  
Wear Leveling ◽  
Block Classification ◽  
Update Frequency

In this paper, we propose a block classification with monitor and restriction (BCMR) method to isolate and reduce the interference of blocks in garbage collection and wear leveling. The proposed method monitors the endurance variation of blocks during garbage collection and detects hot blocks by making a restriction condition based on this information. This method induces block classification by its update frequency for garbage collection and wear leveling, resulting in a prolonged lifespan for NAND flash memory systems. The performance evaluation results show that the BCMR method prolonged the life of NAND flash memory systems by 3.95% and reduced the standard deviation per block by 7.4%, on average.

Nanophotonic identification of defects buried in three-dimensional NAND flash memory devices

2018 ◽  
Vol 1 (1) ◽  
pp. 60-67 ◽  
Author(s):  
Jae Woong Yoon ◽  
Seong-Min Ma ◽  
Gun Pyo Kim ◽  
Yoonshik Kang ◽  
Joonseong Hahn ◽  
...  
Keyword(s):  
Flash Memory ◽  
Three Dimensional ◽  
Memory Devices ◽  
Nand Flash ◽  
Nand Flash Memory

In-line Monitoring of Grain Size Distribution of Channel Poly Si used in 3D NAND Flash Memory Devices using Multiwavelength Raman Spectroscopy

MRS Advances ◽  
2016 ◽  
Vol 1 (5) ◽  
pp. 339-348 ◽  
Author(s):  
Noh Yeal Kwak ◽  
Chul Young Ham ◽  
Min Sung Ko ◽  
Sung Chul Shin ◽  
Seung Jin Yeom ◽  
...  
Keyword(s):  
Raman Spectroscopy ◽  
Grain Size ◽  
Size Distribution ◽  
Grain Size Distribution ◽  
Flash Memory ◽  
Memory Devices ◽  
Nand Flash ◽  
Nand Flash Memory ◽  
Cross Sectional ◽  
Monitoring Technique

ABSTRACTFeasibility of multiwavelength Raman spectroscopy was studied as a potential in-line monitoring technique for grain size distribution in channel poly-Si used in three dimensional stacked NAND (3D NAND) Flash memory devices. Various channel poly-Si materials in 3D-NAND Flash memory devices, converted from chemical vapor deposition (CVD) grown a-Si, were characterized using non-contact, multiwavelength Raman spectroscopy and high resolution cross-sectional transmission electron microscopy (HRXTEM). The Raman characterization results were compared with HRXTEM images. The correlation between the grain size distribution characterized by multiwavelength Raman spectroscopy and “on current” (ION) of 3D NAND Flash memory devices was investigated. Good correlation between these techniques was seen. Multiwavelength Raman spectroscopy is very promising as a non-destructive in-line monitoring technique for grain size distribution in channel poly-Si used in 3D NAND Flash memory devices.

Challenges and limitations of NAND flash memory devices based on floating gates

2012 ◽  
Author(s):  
Byoungjun Park ◽  
Sunghoon Cho ◽  
Milim Park ◽  
Sukkwang Park ◽  
Yunbong Lee ◽  
...  
Keyword(s):  
Flash Memory ◽  
Memory Devices ◽  
Nand Flash ◽  
Nand Flash Memory ◽  
Floating Gates
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