Microstructure Analysis of Melt Spun FeN foils with α''-Fe16N2Phase

MRS Advances ◽  
2016 ◽  
Vol 1 (34) ◽  
pp. 2373-2378 ◽  
Author(s):  
Md A Mehedi ◽  
Yanfeng Jiang ◽  
Jian-Ping Wang
Keyword(s):  
Auger Electron Spectroscopy ◽  
Electron Spectroscopy ◽  
Melt Spinning ◽  
Auger Electron ◽  
Diffraction Spectrum ◽  
X Ray Diffraction ◽  
X Ray ◽  
Melt Spun ◽  
Spinning Process ◽  
Diffraction Peaks

ABSTRACTWe are reporting an approach to prepare bulk foils of α″-Fe16N2that can be directly obtained from a melt spinning process. The diffraction peaks from α″-Fe16N2phase were found in X-ray diffraction spectrum of the foil, for which a nitrogen composition of 8.7at% was found by Auger electron spectroscopy. The microstructure of this melt spun foil was analyzed. We found 600 nm subgrains inside 8 μm grains for this foil. The coercivity of the α″-Fe16N2foil was found as 222 Oe with a saturation magnetization of 223 emu/g. We analyzed the coercivity based on the microstructure and proposed a model to explain how to further improve it in melt spun FeN foils.

Gold/Niobium Thin Film Metallizations for GaAs Devices and Circuits

2001 ◽  
Vol 695 ◽  
Author(s):  
Robert Esser ◽  
Aris Christou
Keyword(s):  
Thin Film ◽  
Auger Electron Spectroscopy ◽  
Electron Spectroscopy ◽  
Auger Electron ◽  
Depth Profiling ◽  
X Ray Diffraction ◽  
X Ray ◽  
Gaas Devices ◽  
Auger Electron Spectroscopy Depth ◽  
Interdiffusion Coefficients

ABSTRACTA refractory metallization of Au/Nb is proposed for use in first level metallization of GaAs devices. The diffusion and reaction kinetics are explored using sheet resistance measurements, along with X-ray diffraction and Auger electron spectroscopy depth profiling. The interdiffusion coefficients are reported. Diodes are fabricated using Nb/Au metallization and characterized

Auger electron spectroscopy and X-ray diffraction studies of Ti-Si layers synthesised by ion implantation

1990 ◽  
Vol 114 (1-2) ◽  
pp. 93-97 ◽  
Author(s):  
S. V. Vidwans ◽  
A. M. Narsale ◽  
V. P. Salvi ◽  
A. A. Rangwala ◽  
L. Guzman ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Auger Electron Spectroscopy ◽  
Electron Spectroscopy ◽  
Auger Electron ◽  
X Ray Diffraction ◽  
X Ray

scholarly journals Suppression of the Uranium-Hydrogen Reaction using High-Dose Carbon Implantation

1987 ◽  
Vol 93 ◽  
Author(s):  
R. G. Musket
Keyword(s):  
Auger Electron Spectroscopy ◽  
Oxide Layer ◽  
Electron Spectroscopy ◽  
Auger Electron ◽  
Room Temperature ◽  
Uranium Oxide ◽  
High Dose ◽  
X Ray Diffraction ◽  
X Ray ◽  
Glancing Angle

ABSTRACTWe have previously reported the delay and reduction of the hydriding of uranium by implantation of oxygen. The reduced hydriding was attributed to the presence of the uranium oxide layer created near room temperature. In this paper we present results for the layers formed by implantation of 80 keV C+ to a dose of 8E17 C/cm2. The carbide layers formed were characterized by Auger electron spectroscopy, Rutherford backscattering, and glancing angle x-ray diffraction. Hydriding properties of both nonimplanted and implanted uranium were measured for 76 Torr hydrogen at 130°C. The implanted specimens had significantly longer incubation times for the start of the reaction after exposure to hydrogen and less area participating in the reaction.

X-ray Diffraction of Plasma Nitrided Ti-6AI-4V

1989 ◽  
Vol 33 ◽  
pp. 129-135
Author(s):  
A. Raveh ◽  
G. Kimmel ◽  
R. Avni ◽  
A. Grill
Keyword(s):  
Solid Solution ◽  
Auger Electron Spectroscopy ◽  
Elemental Analysis ◽  
Electron Spectroscopy ◽  
Auger Electron ◽  
Relative Concentration ◽  
X Ray Diffraction ◽  
Feed Composition ◽  
X Ray

AbstractTi-6Al-4V alloy has been nitrided in plasmas of N2 -H2 -Ar. The structure has been characterized by X-ray diffraction (XRD) for the determination of the products formed. The information was supported by elemental analysis with Auger Electron Spectroscopy (AES).Three phases were identified as follows: δ-TiN, ε-Ti2N and α'-Ti (solid solution of nitrogen in titanium). The gas-feed composition affects the nitriding process as found from phase orientation and relative concentration of the products.

scholarly journals A Near-Stoichiometric Sic-Based Fibre Obtained from a Polyaluminocarbosilane Precursor

2004 ◽  
Vol 13 (5) ◽  
pp. 096369350401300
Author(s):  
Yuxi Yu ◽  
Xiaodong Li ◽  
Feng Cao
Keyword(s):  
Oxidation Resistance ◽  
Electron Spectroscopy ◽  
Melt Spinning ◽  
Auger Electron ◽  
Physical And Mechanical Properties ◽  
Thermal Exposure ◽  
X Ray Diffraction ◽  
Creep Properties ◽  
X Ray ◽  
Elemental Chemical Analysis

A near-stoichiometric SiC-based fibre containing ∼2 wt% aluminum, called SiC(Al) fibre, has been developed. SiC(Al) fibre can be obtained from an organometallic polymer precursor polyaluminocarbosilane by melt-spinning, oxidation curing, sintering at 1800°C in argon. SiC(Al) fibre was characterised by elemental chemical analysis, tensile test, Scanning electron microscopy, X-ray diffraction and Auger electron spectroscopy. Physical and mechanical properties of SiC(Al) fibre under thermal exposure, oxidation resistance and creep properties at elevated temperature were examined. The SiC(Al) fibre has more excellent oxidation resistance than Nicalon, Hi-Nicalon fibre and better creep resistance than the Tyranno SA fibre.

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