Characterization of PbS thin films obtained by chemical bath at low temperature using sodium citrate as complexing agent

MRS Advances ◽  
2016 ◽  
Vol 1 (37) ◽  
pp. 2623-2628 ◽  
Author(s):  
David Ramírez-Ceja ◽  
Luis A. González ◽  
José Escorcia-García ◽  
Arturo I. Martínez-Enríquez
Keyword(s):  
Thin Films ◽  
Sodium Citrate ◽  
Xrd Analysis ◽  
Open Circuit ◽  
Spherical Particles ◽  
Complexing Agent ◽  
Cds Thin Film ◽  
Short Current Density ◽  
Deposited Film

ABSTRACTThe deposition of PbS thin films by the chemical bath deposition method using sodium citrate as non-toxic complexing agent is presented. As-deposited PbS films and those annealed at 200 and 300 °C in argon atmosphere were formed by tightly compact spherical particles homogeneously distributed along the substrates. The XRD analysis shows that all the films had a galena type cubic crystalline structure. The crystallite size of the as-deposited film was 17 nm which decreased to 14 nm when the film was annealed to 300 °C. Thermal treatments to the films produced a shift of the optical band gap from 1.34 to 1.49 eV. Furthermore, the as-deposited PbS films were photosensitive showing a conductivity of 10-2 Ω-1 cm-1 under illumination. Such a conductivity increased to 10-1 Ω-1 cm-1 with the thermal treatment at 200 °C. The evaluation of the PbS film using a CdS thin film partner as window in the solar cell configuration showed an open circuit voltage of 88 mV and a short current density of 3.5 mA/cm2.

Novel SnSb2S4 Thin Films Obtained by Chemical Bath Deposition using Tartaric Acid as Complexing Agent for Their Application as Absorber in Solar Cells

MRS Advances ◽  
2019 ◽  
Vol 4 (37) ◽  
pp. 2035-2042 ◽  
Author(s):  
L.A. Rodríguez-Guadarrama ◽  
I.L. Alonso-Lemus ◽  
J. Campos-Álvarez ◽  
J. Escorcia-García
Keyword(s):  
Thin Films ◽  
Solar Cells ◽  
Tartaric Acid ◽  
Chemical Bath Deposition ◽  
Short Circuit ◽  
Short Circuit Current ◽  
Xrd Analysis ◽  
Short Circuit Current Density ◽  
Open Circuit ◽  
Complexing Agent

ABSTRACTTernary Sn-Sb-S thin films with remarkable optical, electrical and structural properties were developed by chemical bath deposition. Tin and antimony chlorides and thioacetamide were used as tin, antimony, and sulfur ion sources, respectively, while tartaric acid was used as a complexing agent. XRD analysis of as-deposited films showed a combination of binary phases of SnS, Sn2S3, and Sb2S3, while after thermal treatment in nitrogen at 400 °C, the films became crystalline showing well-defined reflections of the ternary SnSb2S4. The heating also influenced the morphology, compactness, and thickness of the films. On the other hand, all the films showed an absorption coefficient higher than 104 cm-1, while the optical band gap of the as-deposited film decreased from 1.49 to 1.37 eV after heating at 400 °C. In addition, the photoconductivity of the films prior to heating was of 10-9 Ω-1 cm-1, while after that at 400 °C was of 10-7 Ω-1 cm-1. The evaluation of the ternary film in solar cells gave an open-circuit voltage Voc of 448 mV and short-circuit current density of Jsc of 2.4 mA/cm2.

scholarly journals Synthesis and Characterization of Trivalent al Substituted Zinc Ferrite using Ethylene Diamine (EDA) as Ligand

2020 ◽  
Vol 2 (2) ◽  
Author(s):  
Soumya Mukherjee
Keyword(s):  
Zinc Ferrite ◽  
Xrd Analysis ◽  
Ph Control ◽  
Ethylene Diamine ◽  
Complexing Agent ◽  
Chemical Route ◽  
Molar Ratios ◽  
Auto Combustion ◽  
Phase Transition Zone

Nano domain Al substituted Zinc ferrite was prepared by chemical route using Ethylene Diamine as ligand. High purity precursors nitrate salts of Zinc, Fe(3+), Al(3+) were utilized along with citric acid which acts as both fuel and complexing agent. Two different molar ratios of Zn(2+):(Fe3+):Al(3+) is 1:1.5:0.5 and 1:1.25:0.75. After ensuring proper mix of the solution Ethylene diamine was added dropwise to form a gel like mass with proper pH control. Before annealing, thermal analysis was carried to determine the crystallization/phase transition zone. Drying was carried in several stages. Initially, gel like mass was obtained after drying at 40°C while pH was about 7. Drying of gel was carried in oil bath at about 90°C and powdered mass obtained was grinded followed by auto combustion at 150°C for 60 minutes before annealing at 150°C, 350°C, 650°C, 950°C for 2 hours to ensure the phase formation. Crystallite size, lattice strain and lattice parameters were studied from XRD analysis. 

scholarly journals Characterization of Electrodeposited Cadmium Selenide Thin Films

2012 ◽  
Vol 60 (1) ◽  
pp. 137-140 ◽  
Author(s):  
RI Chowdhury ◽  
MS Islam ◽  
F Sabeth ◽  
G Mustafa ◽  
SFU Farhad ◽  
...  
Keyword(s):  
Thin Films ◽  
Cadmium Selenide ◽  
Low Cost ◽  
X Ray Diffraction ◽  
Glass Substrates ◽  
Cdse Film ◽  
Cell Structures ◽  
Deposited Film ◽  
Deposited Films

Cadmium selenide (CdSe) thin films have been deposited on glass/conducting glass substrates using low-cost electrodeposition method. X-ray diffraction (XRD) technique has been used to identify the phases present in the deposited films and observed that the deposited films are mainly consisting of CdSe phases. The photoelectrochemical (PEC) cell measurements indicate that the CdSe films are n-type in electrical conduction, and optical absorption measurements show that the bandgap for as-deposited film is estimated to be 2.1 eV. Upon heat treatment at 723 K for 30 min in air the band gap of CdSe film is decreased to 1.8 eV. The surface morphology of the deposited films has been characterized using scanning electron microscopy (SEM) and observed that very homogeneous and uniform CdSe film is grown onto FTO/glass substrate. The aim of this work is to use n-type CdSe window materials in CdTe based solar cell structures. The results will be presented in this paper in the light of observed data.DOI: http://dx.doi.org/10.3329/dujs.v60i1.10352  Dhaka Univ. J. Sci. 60(1): 137-140 2012 (January)

Formation and characterization of the CuIn(S,Se)2/buffer layer interface in electrodeposited solar cells

2005 ◽  
Vol 865 ◽  
Author(s):  
N. Naghavi ◽  
C. Hubert ◽  
O. Roussel ◽  
L. Sapin ◽  
M. Lamirand ◽  
...  
Keyword(s):  
Buffer Layer ◽  
Fill Factor ◽  
Open Circuit ◽  
Solution Chemistry ◽  
Complexing Agents ◽  
Complexing Agent ◽  
Main Role ◽  
Near Surface

AbstractThis paper presents the influence of the solution chemistry of chemical bath deposition (pH and complexing agents) on the performance of CuIn(S,Se)2 cells after an initial CN treatment. It is shown that it is possible to modify the deposition conditions of the CdS by increasing the pH of the solution and by replacing the complexing agent (ammonia) by citrate ions. Both NH3 based and citrate based process give very homogenous and covering thin films. However, in the case of the citrate based process a decrease of open circuit voltage (Voc) and fill factor (FF) and thus of the cell efficiencies is observed. This points out that the main role of the buffer layer is not only related to the specific properties of the CdS itself but also to the near surface modifications of the CuIn(S,Se)2 caused by the presence of the complexing agent in the bath.

Growth and Characterization of PZT Thin Films

2008 ◽  
Author(s):  
Daqun Bao ◽  
Yi Zhang ◽  
Hang Guo
Keyword(s):  
Thin Films ◽  
Sol Gel ◽  
Xrd Analysis ◽  
Annealing Process ◽  
Pzt Thin Films ◽  
X Ray ◽  
Crystallographic Structures ◽  
Strain Equation

This paper presents the growth and characterization of PZT thin films by using the sol-gel technology. In this paper, we study the influences of annealing process and different substrates on the orientation and crystalline quality of PZT thin films. The crystallographic structures are tested by using X-ray diffractometer (XRD), and the residual stresses of PZT thin films are obtained by calculation from a derived stress-strain equation in XRD analysis. Moreover, surface morphology and microstructure of the films are investigated by using AFM and SEM, and the polarization hysteresis of PZT thin films is measured by using a Sawyer Tower circuit. The results show that PZT thin films prepared by using the sol-gel method have good properties and can be used for developing PZT-based micro and nano devices.

Ion-Beam Sputtering Deposited Cu-Doped CdS Thin Film

2013 ◽  
Vol 743-744 ◽  
pp. 915-919
Author(s):  
Guang Xing Liang ◽  
Ping Fan ◽  
Peng Ju Cao ◽  
Zhuang Hao Zheng
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Ion Beam ◽  
Xrd Analysis ◽  
Ion Beam Sputtering ◽  
Structural Morphology ◽  
Wurtzite Phase ◽  
Cds Thin Film ◽  
Beam Sputtering ◽  
Cds Thin Films

Cu-doped CdS thin film has been successfully deposited by ion-beam sputtering deposition. The structural, morphology, optical and electrical properties of as-deposited and annealed Cu-doped CdS thin films were investigated. The heavily Cu-doped CdS films annealed at 400 °C was demonstrated to be improved in structural, morphology, electrical and optical properties. X-ray diffraction (XRD) analysis indicated the formation of polycrystalline CdS film with the structure of hexagonal wurtzite phase. No distinct impurity of Cu and Cu-S phase was detected in Cu-doped CdS thin films. Atomic force microscopy (AFM) revealed that the grain size was increased after annealed. Optical transmission and absorption spectroscopy measurement revealed a high absorption and energy band gap was of about 2.40 eV. The CdS thin film was of p-type conductivity and the resistivity was found to be 1.28×10-1Ωcm.

Preparation and Characterization of High-Copper Restorative Dental Alloys Corrected

2011 ◽  
Vol 324 ◽  
pp. 69-72
Author(s):  
Ziyad S. A. Al Sarraj ◽  
Riyadh I. Atiyah
Keyword(s):  
Copper Content ◽  
Room Temperature ◽  
Xrd Analysis ◽  
Inert Atmosphere ◽  
Dental Amalgam ◽  
Spherical Particles ◽  
Dental Alloys ◽  
High Copper ◽  
High Copper Content

A series of restorative dental alloys related to the ternary system Ag-Sn-Cu were prepared using high purity 99.99% elemental constituents. The effect of increasing the copper concentration on the micro-structural and mechanical properties of conventional dental amalgam alloy was investigated. Copper content was varied in the range of 10-30wt% and that of silver in the range of 40-60wt%, while tin percentage was kept constant between 28-30wt%. Selected desired compositions were weighed, melted, and homogenized for 1h in fused-alumina crucible using wire-resistance tube furnace at 1100oC under an inert atmosphere of argon gas. Two types of alloys were prepared, the first one was by quenching in water the alloy melt from a peak temperature of 725oC, while the second type was by slow furnace-cooling of the melt down to the room temperature. Annealing of the alloys at 350- 400oC for 24 hrs was also conducted to enhance the growth of the γ-phase. The resultant alloys were then cooled to room temperature (R.T) and milled mechanically to obtain a powder having particles sizes in the range between 30-80μm. The resultant powdered alloys was then stress-relieved at 100oC for 1h. XRD analysis, optical microscopy, micro hardness, and compression strength tests were all used for the characterization and properties determination at different Cu-concentrations for the as-prepared and amalgamated alloys in addition to the powders.. The obtained relative values for the above-mentioned properties were closely related to those listed in the literatures and lies between those of mechanically-milled and those of spherical particles. Also the γ2 – phase was disappeared at high copper content of > 20wt%.

scholarly journals Structural, morphological, optical and diode properties of chemical bath deposited nano-structured CdS thin films using EDTA as a complexing agent

2019 ◽  
Vol 37 (3) ◽  
pp. 317-323
Author(s):  
S.N. Vidhya ◽  
R.T. Karunakaran
Keyword(s):  
Thin Films ◽  
Visible Region ◽  
Optical Transmittance ◽  
Sem Analysis ◽  
Complexing Agent ◽  
X Ray Diffraction ◽  
Region I ◽  
Cds Thin Films ◽  
Photoluminescence Studies

AbstractCdS thin films with (1 1 1) orientation were prepared by chemical bath deposition technique at 80±5 °C using the reaction between NH4OH, CdCl2 and CS(NH2)2. The influence of annealing temperature varying from 150 °C to 250 °C was studied. X-ray diffraction studies revealed that the films are polycrystalline in nature with cubic structure. Various parameters, such as dislocation density, stress and strain, were also evaluated. SEM analysis indicated uniformly distributed nano-structured spherically shaped grains and net like morphology. Optical transmittance study showed the wide transmittance band and absence of absorption in the entire visible region. I-V characterization of p-Si/n-CdS diode and photoluminescence studies were also carried out for the CdS films.

Effect of Annealing Temperature on The Refrective Index and Dielectric Properties of TiO2/MnO2 CORE/SHELL Thin Films

2014 ◽  
Vol 6 (3) ◽  
pp. 1227-1232
Author(s):  
Peter Ekuma Agbo
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Refractive Index ◽  
Dielectric Properties ◽  
Dielectric Property ◽  
Annealing Temperature ◽  
Xrd Analysis ◽  
Core Shell ◽  
Structural Nature ◽  
Deposited Film

Thin film of the form TiO2/MnO2 was deposited using the chemical bath method. The deposited thin films were annealed at temperatures of in order to investigate the effect of annealing temperature on the refractive index and dielectric property. To do this the films were characterized using UV-Spectrophotometer and XRD analysis was also carriedout to study the structural nature of the deposited film. Our results reaveled that annealing has profound effect on theindex of refraction and the dielectric properties.  

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