ZnO1-xTexthin films deposited by reactive magnetron co-sputtering: composition, structure and optical properties

MRS Advances ◽  
2017 ◽  
Vol 2 (53) ◽  
pp. 3111-3116
Author(s):  
O. Sánchez ◽  
A. Climent ◽  
M. Fernández Barcia ◽  
O. Martínez Sacristán ◽  
M. Hernández-Vélez
Keyword(s):  
Crystalline Structure ◽  
Broad Band ◽  
Zno Films ◽  
Reactive Magnetron ◽  
X Ray Diffraction ◽  
Atomic Concentration ◽  
X Ray ◽  
Cathode Substrate ◽  
Composition Structure

ABSTRACTZnO1-xTexthin films were deposited by DC reactive magnetron co-sputtering using pure Zn and Te targets. Te atomic concentration in the films ranged from x=0 to 0.33 by adjusting the applied power on the targets or varying the cathode-substrate distance. Chemical composition and crystalline structure were determined by RBS experiments and X-ray Diffraction, respectively. For low Te atomic concentrations (x≤0.04) the deposited ZnO1-xTexfilms showed a crystalline structure ZnO wurtzite type however, for increasing Te concentration significant broadening and decreasing intensities of the main peaks belonging to pure ZnO films together with some weak peaks characteristic of crystalline Trizinc Tellurate salt have appeared. For the highest x values some non-identified weak peaks beside to some others peaks corresponding to the crystalline phases mentioned above as well as, a broad band probably associated to amorphous TeO2phase were observed. A preliminary optical characterization of the samples point out the possibility of different electronic transitions within the ZnO band gap.

Preparation and Characterization of Graphene Nanoplatelet/Magnetite Compound Powders

2011 ◽  
Vol 284-286 ◽  
pp. 464-469
Author(s):  
Guo Hua Chen ◽  
Hai Tao Tang
Keyword(s):  
Room Temperature ◽  
Nano Particles ◽  
X Ray Diffraction ◽  
Graphene Nanoplatelet ◽  
X Ray ◽  
Wet Chemical ◽  
Composition Structure ◽  
Co Precipitation ◽  
Graphite Sheets

Graphene nanoplatelet（GN）/ Magnetite compound powders with magnetite nano-particles coated on the surface of graphite sheets has been successfully prepared by the wet-chemical co-precipitation. The effects of reaction temperature and mole ratio of Fe2+/Fe3+ on ultimate products were investigated. It has been found that excellent magnetite/GN compound powders were obtained at 30 °C with the Fe2+/Fe3+ mole ratio of 5:1. The composition, structure and the electric and magnetic properties of products were characterized by X-ray diffraction, scanning electron microscopy, Fourier transform infrared spectroscopy, vibrating-sample magnetometer and four-point probe resistivity measurement.The compound powders have also exhibited the ferromagnetic properties at room temperature.

EBSD Analysis of SmCoFeCuZr Alloys

2016 ◽  
Vol 869 ◽  
pp. 608-613
Author(s):  
Sergio Antonio Romero ◽  
Christien G. Hauegen ◽  
Fernando J.G. Landgraf ◽  
Marcos Flavio de Campos
Keyword(s):  
Texture Analysis ◽  
Crystalline Structure ◽  
Ebsd Analysis ◽  
Phase Identification ◽  
X Ray Diffraction ◽  
Complementary Technique ◽  
X Ray ◽  
Kikuchi Lines

In the present study, EBSD was used for the characterization of alloys used for production of SmFeCoCuZr magnets. EBSD is adequate for texture analysis, but may give misleading results for phase identification. EBSD is not suitable for identifying phases with very similar crystalline structure, especially when the phases are crystallographically coherent, due to the superposition of Kikuchi lines. As consequence, for phase identification EBSD should be considered a complementary technique to other methods, as for example x-ray diffraction (XRD).

X-ray diffraction and photoluminescence studies of zinc oxide films grown on silicon substrates by dc reactive magnetron sputtering

2008 ◽  
Vol 23 (S1) ◽  
pp. S94-S97 ◽  
Author(s):  
G. Juárez-Díaz ◽  
H. Solache-Carranco ◽  
G. Romero-Paredes R. ◽  
R. Peña-Sierra ◽  
J. Martínez-Juárez ◽  
...  
Keyword(s):  
Zinc Oxide ◽  
Magnetron Sputtering ◽  
Reactive Magnetron Sputtering ◽  
Zno Films ◽  
Silicon Substrates ◽  
Reactive Magnetron ◽  
X Ray Diffraction ◽  
X Ray ◽  
Zinc Oxide Films ◽  
Dc Reactive Magnetron Sputtering

Thin polycrystalline ZnO films were grown on silicon substrates by dc reactive magnetron sputtering using zinc oxide targets. The quality of the ZnO layers was assessed by X-ray diffraction (XRD), atomic force microscopy, Raman scattering, and photoluminescence measurements. The XRD studies and Raman studies revealed that the ZnO films crystallize in the wurtzite structure. Room temperature photoluminescence spectra consisted of a narrow near-band-edge ultraviolet band and a broad defect-related green band with peak positions at 380 and 516 nm, respectively. The main goal of the work was to define the growth conditions to prepare zinc oxide films with adequate properties to be used in electroluminescent devices. The films exhibited the best surface appearance with a 40:1 argon/oxygen flow rate, a total pressure of 1.5×10−3 mbar, and a substrate temperature of 230 °C. The structural and luminescence properties improved noticeably with the thermal annealing processes at 800 °C for 1 h.

Characterization of the Thin Films Structures in Subwavelength Regime as Biosensing Materials

2015 ◽  
Vol 772 ◽  
pp. 62-66 ◽  
Author(s):  
R. Steigmann ◽  
N. Iftimie ◽  
A. Savin
Keyword(s):  
High Performance ◽  
Thermal Evaporation ◽  
Zno Films ◽  
X Ray Diffraction ◽  
Thermal Evaporation Method ◽  
X Ray ◽  
Glass Substrates ◽  
Ito Glass ◽  
Metallic Strip

Zinc oxide nanostructured materials, such as films and nanoparticles, could provide a suitable platform for development of high performance biosensing material due to their unique fundamental material properties. This paper presents the characterization of ZnO thin film as biosensing material by metallic strip grating structure (MSG), for the real-time detection. In this work, high quality ZnO films were grown on ITO/glass substrates by vacuum thermal evaporation method. We characterized by X-ray diffraction (XRD) the film crystalline quality and by scanning electron microscopy (SEM) the film morphology.

Characterization of Aluminium Titanium Nitride Thin Films Deposited by Reactive Magnetron Co-Sputtering

2010 ◽  
Vol 93-94 ◽  
pp. 340-343 ◽  
Author(s):  
Adisorn Buranawong ◽  
Surasing Chaiyakhun ◽  
Pichet Limsuwan
Keyword(s):  
Crystal Structure ◽  
Thin Films ◽  
Titanium Nitride ◽  
Deposition Time ◽  
Reactive Magnetron ◽  
X Ray Diffraction ◽  
X Ray ◽  
Constant Flow Rate ◽  
Transmission Electron

Nanocrystalline aluminium titanium nitride (AlTi3N) thin films were deposited on Si (100) wafers and grids by reactive magnetron co-sputtering technique using titanium and aluminium targets. The films were sputtered in Ar and N2 mixture at a constant flow rate under different conditions of deposition time ranging from 15 to 60 minutes. The crystal structure was characterized by X-Ray diffraction (XRD) and microstructure was analyzed by transmission electron microscopy (TEM). The results indicated that the formation of polycrystalline AlTi3N with the orthorhombic structure and the development of crystal structure was observed by varied the deposition time. The microstructure of films was good according to the XRD results. On the other hand, after annealed the films at 500OC in the air for 1 hour, the crystal structure did not change that exposed the stable structure of AlTi3N films.

Crystallinity Studies of GaN/Si Films Grown by MOCVD at Various Substrate Temperatures Using XRD

2006 ◽  
Vol 517 ◽  
pp. 69-72
Author(s):  
Sha Shiong Ng ◽  
Hassan Zainuriah ◽  
Abu Hassan Haslan ◽  
M.E. Kordesch
Keyword(s):  
Crystalline Structure ◽  
Growth Temperature ◽  
Structure Type ◽  
X Ray Diffraction ◽  
General Picture ◽  
X Ray ◽  
Si Films ◽  
Substrate Temperatures ◽  
Deposited Films

In this paper, we report on the characterization of a set of MOCVD grown GaN samples with a variety of structural or crystalline quality. X-ray diffraction (XRD) was used to observe the change of the crystalline structure with deposition temperature. All results show that the structure type of the GaN deposited films is sensitive to the growth temperature. Our results also revealed that a good crystalline structure of GaN films could be grown at temperatures higher than 600°C. Finally, a general picture on the correlations between the growth temperature and the GaN deposited films crystalline is reported.

STRUCTURE AND CHARACTERIZATION OF ZnO THIN FILM PREPARED BY SPIN COATING

2006 ◽  
Vol 13 (01) ◽  
pp. 13-15 ◽  
Author(s):  
GUANGPENG MA ◽  
JIANRU HAN ◽  
CHANGHONG YANG ◽  
HONGYAN XU ◽  
DONGMEI YANG ◽  
...  
Keyword(s):  
Spin Coating ◽  
Silica Glass ◽  
Sol Gel ◽  
Zno Films ◽  
Ultraviolet Region ◽  
X Ray Diffraction ◽  
X Ray ◽  
Glass Substrates ◽  
High Temperature Process

ZnO thin films were prepared on silica glass substrates by a sol–gel spin coating technique. The thickness of the films was about 200 nm. At 370 nm in the ultraviolet region, there is a sharp absorption edge that corresponds to the ZnO intrinsic band gap of 3.30 eV. The structural properties of the films were examined by X-ray diffraction, which demonstrates that the ZnO films were c-axis oriented. From the infrared spectrum, we conclude that ZnO was deposited on silica glass substrates through a high temperature process at 700°C.

Preparation and Characterization of Cobalt Doped ZnO and TiO2

2002 ◽  
Vol 722 ◽  
Author(s):  
Shaoguang Yang ◽  
Silas T. Hung ◽  
Herman H.Y. Sung ◽  
A.B. Pakhomov ◽  
C.Y. Wong
Keyword(s):  
Diluted Magnetic Semiconductor ◽  
Magnetic Semiconductor ◽  
Zno Films ◽  
X Ray Diffraction ◽  
Sputtering Deposition ◽  
X Ray ◽  
Doped Zno ◽  
Diluted Magnetic ◽  
Co Doped

AbstractSynthesis and characterization of transparent Co-doped ZnO and TiO2 diluted magnetic semiconductor (DMS) films are described. The films are prepared by single sputtering deposition. They are ferromagnetic at temperatures as high as 350 K. The films were characterized by X-ray diffraction (XRD), X-ray photoemission spectroscopy (XPS), X-ray fluorescence (XRF). Optical transparency was measured on UV/VIS spectrometer. The Codoped ZnO films had wurtzite structure similar to ZnO with the (002) preferential texture. Neither XRD nor XPS showed any presence of pure Co or CoO in the samples. The Co-doped TiO2 samples were amorphous, and some unoxidized Co was found in the films.

scholarly journals Boron and Gadolinium Loaded Fe3O4 Nanocarriers for Potential Application in Neutron Cancer Therapy

2021 ◽  
Vol 22 (16) ◽  
pp. 8687
Author(s):  
Ilya V. Korolkov ◽  
Alexandr V. Zibert ◽  
Lana I. Lissovskaya ◽  
K. Ludzik ◽  
M. Anisovich ◽  
...  
Keyword(s):  
X Ray Diffraction ◽  
Normal Cells ◽  
X Ray ◽  
Structure Morphology ◽  
Novel Method ◽  
Low Cytotoxicity ◽  
Composition Structure ◽  
Average Size ◽  
Magnetic Nanocarriers

In this article, a novel method of simultaneous carborane- and gadolinium-containing compounds as efficient agents for neutron capture therapy (NCT) delivery via magnetic nanocarriers is presented. The presence of both Gd and B increases the efficiency of NCT and using nanocarriers enhances selectivity. These factors make NCT not only efficient, but also safe. Superparamagnetic Fe3O4 nanoparticles were treated with silane and then the polyelectrolytic layer was formed for further immobilization of NCT agents. Fourier-transform infrared spectroscopy (FTIR), X-ray diffraction (XRD), energy dispersive X-ray (EDX), ultraviolet–visible (UV-Vis) and Mössbauer spectroscopies, dynamic light scattering (DLS), scanning electron microscopy (SEM), vibrating-sample magnetometry (VSM) were applied for the characterization of the chemical and element composition, structure, morphology and magnetic properties of nanocarriers. The cytotoxicity effect was evaluated on different cell lines: BxPC-3, PC-3 MCF-7, HepG2 and L929, human skin fibroblasts as normal cells. average size of nanoparticles is 110 nm; magnetization at 1T and coercivity is 43.1 emu/g and 8.1, respectively; the amount of B is 0.077 mg/g and the amount of Gd is 0.632 mg/g. Successful immobilization of NCT agents, their low cytotoxicity against normal cells and selective cytotoxicity against cancer cells as well as the superparamagnetic properties of nanocarriers were confirmed by analyses above.

scholarly journals Preparation and Characterization of Indium and Gallium doped Transparent ZnO Films for Solar Cell Applications

2018 ◽  
Vol 34 (5) ◽  
pp. 2325-2331
Author(s):  
Reuben Seth Richter ◽  
A. Yaya ◽  
D. Dodoo-Arhin ◽  
B. Agyei-Tuffour ◽  
Robinson Juma Musembi ◽  
...  
Keyword(s):  
Thin Films ◽  
Zno Thin Films ◽  
Zno Films ◽  
Optical And Electrical Properties ◽  
X Ray Diffraction ◽  
X Ray ◽  
Glass Substrates ◽  
Spray Pyrolysis Deposition ◽  
Hall Effect Measurements

In this work, the effect of indium (In) and gallium (Ga) dopants on the structural, optical and electrical properties of ZnO thin films was studied. ZnO thin films were deposited on glass substrates at 400°C using the spray pyrolysis deposition technique. X-ray diffraction (XRD) results indicated that both undoped and doped ZnO films had (002) preferred orientation. The undoped ZnO films were found to exhibit high transmittance above 80%, while indium-doped (In:ZnO) and gallium-doped (Ga:ZnO) films had transmittance above 60% and 70% respectively. From the Hall Effect measurements, doping improved the conductivity of the ZnO thin films however, In:ZnO films showed higher electrical conductivity compared to Ga:ZnO films. Electron probe microanalysis (EPMA) results were used to confirm the presence of the respective dopants in the thin film samples.

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