Epitaxial growth of Cu2O films on MgO by sputtering

1992 ◽  
Vol 7 (10) ◽  
pp. 2828-2832 ◽  
Author(s):  
Dean J. Miller ◽  
Jeffrey D. Hettinger ◽  
Ronald P. Chiarello ◽  
Hyung K. Kim
Keyword(s):  
Thin Films ◽  
Epitaxial Growth ◽  
Growth Mechanism ◽  
Epitaxial Films ◽  
Epitaxial Thin Films ◽  
Continuous Film ◽  
Significant Interest ◽  
Deposition By Sputtering ◽  
Cu2o Films ◽  
Unique Potential

The epitaxial growth of Cu2O films is of significant interest for the unique potential they offer in the development of multilayer devices and superlattices. While fundamental studies may be carried out on epitaxial films prepared by any technique, the growth of artificially layered superlattices requires that films grow epitaxially during deposition. The present study examined the growth of Cu2O on MgO substrates directly during deposition by sputtering. Although epitaxial thin films of Cu2O could be produced, a mosaic structure was observed. The structure of the film may be related to the growth mechanism in which islands coalesce to form a continuous film.

Two-step epitaxial growth of NbON (100) thin films on rutile-type TiO2 (101) substrates and reduction of residual carrier concentration by RF reactive sputtering

CrystEngComm ◽  
2019 ◽  
Vol 21 (23) ◽  
pp. 3552-3556 ◽  
Author(s):  
Ryosuke Kikuchi ◽  
Toru Nakamura ◽  
Yasushi Kaneko ◽  
Kazuhito Hato
Keyword(s):  
Thin Films ◽  
Epitaxial Growth ◽  
Carrier Concentration ◽  
Reactive Sputtering ◽  
Epitaxial Films ◽  
Step Growth

Two-step growth makes it possible to grow NbON epitaxial films and minimize anion-related defects in the NbON films.

scholarly journals Epitaxial growth mechanism of L10 FePt thin films on Pt∕Cr bilayer with amorphous glass substrate

2005 ◽  
Vol 98 (7) ◽  
pp. 076109 ◽  
Author(s):  
An-Cheng Sun ◽  
P. C. Kuo ◽  
Jen-Hwa Hsu ◽  
H. L. Huang ◽  
Jui-Ming Sun
Keyword(s):  
Thin Films ◽  
Epitaxial Growth ◽  
Growth Mechanism ◽  
Glass Substrate ◽  
Amorphous Glass ◽  
Fept Thin Films

Structural and Magnetotransport Properties of Coherently Strained La2/3Ca1/3MnO3 Epitaxial Thin Films

2006 ◽  
Vol 52 ◽  
pp. 81-86
Author(s):  
LI. Abad ◽  
V. Laukhin ◽  
S. Valencia ◽  
M. Varela ◽  
Ll. Balcells ◽  
...  
Keyword(s):  
Thin Films ◽  
Annealing Temperature ◽  
Magnetic Transition ◽  
Epitaxial Films ◽  
Epitaxial Thin Films ◽  
Bulk Materials ◽  
Magnetic Transition Temperature ◽  
Cell Parameters ◽  
Saturation Magnetisation ◽  
Very High

Magnetotransport properties of very high quality fully strained epitaxial thin films of La2/3Ca1/3MnO3 (LCMO), grown on top of SrTiO3 (STO) (001) substrates, are analyzed. As-grown fully strained epitaxial films are ferromagnetic and metallic but exhibit depressed transport and magnetic properties (low TC and MS). Detailed analysis of the structural and magnetotransport properties after high temperature annealing processes, have revealed a progressive structural relaxation, as detected by the variation of the c/a tetragonal distortion, as the annealing temperature rises up. Nevertheless, no changes in the in-plane cell parameters are observed. Simultaneously, the magnetic transition temperature, TC, and saturation magnetisation, MS, substantially increase approaching values similar to that of bulk materials.

Epitaxial growth mechanism of high-crystallinity lanthanum hexaboride (001) thin films on silicon (001) by electron beam deposition

2020 ◽  
Vol 13 (5) ◽  
pp. 055504
Author(s):  
Ørjan Sele Handegård ◽  
Hai Dang Ngo ◽  
Ramu Pasupathi Sugavaneshwar ◽  
Tung Anh Doan ◽  
Furuhata Naoki ◽  
...  
Keyword(s):  
Thin Films ◽  
Electron Beam ◽  
Epitaxial Growth ◽  
Growth Mechanism ◽  
Lanthanum Hexaboride ◽  
High Crystallinity ◽  
Electron Beam Deposition ◽  
Beam Deposition

High-performance CuFe2O4 epitaxial thin films with enhanced ferromagnetic resonance properties

RSC Advances ◽  
2016 ◽  
Vol 6 (102) ◽  
pp. 100108-100114 ◽  
Author(s):  
Ruyi Zhang ◽  
Ming Liu ◽  
Lu Lu ◽  
Shao-Bo Mi ◽  
Chun-Lin Jia ◽  
...  
Keyword(s):  
Thin Films ◽  
Ferromagnetic Resonance ◽  
High Performance ◽  
Bulk Material ◽  
Epitaxial Films ◽  
Epitaxial Thin Films ◽  
Resonance Properties ◽  
First Time

CuFe2O4 epitaxial films with superior FMR properties compared with bulk material have been successfully fabricated for the first time.

Fabrication of heteroepitaxial thin films of layered oxychalcogenides LnCuOCh (Ln = La–Nd; Ch = S–Te) by reactive solid-phase epitaxy

2004 ◽  
Vol 19 (7) ◽  
pp. 2137-2143 ◽  
Author(s):  
Hidenori Hiramatsu ◽  
Kazushige Ueda ◽  
Kouhei Takafuji ◽  
Hiromichi Ohta ◽  
Masahiro Hirano ◽  
...  
Keyword(s):  
Thin Films ◽  
Solid Phase ◽  
Epitaxial Films ◽  
Annealing Process ◽  
Epitaxial Thin Films ◽  
Solid Phase Epitaxy ◽  
X Ray Diffraction ◽  
X Ray ◽  
Preparation Conditions ◽  
Thermal Annealing Process

Processes and preparation conditions for growing epitaxial thin films of Cu-based, layered oxychalcogenides LnCuOCh (Ln = La, Ce, Pr or Nd; Ch = S1-xSex or Se1-yTey) are reported. Epitaxial thin films on MgO (001) substrates were prepared by a reactive solid-phase epitaxy method. Four-axes high-resolution x-ray diffraction measurements revealed that the crystallographic orientation is (001)[110] LnCuOCh || (001)[110] MgO and the internal stress of the crystalline lattices in the films are relaxed during thermal-annealing process of the reactive solid-phase epitaxy. Furthermore, except for CeCuOS, systematic variations in the lattice constant by chalcogen or lanthanide ion substitutions were observed. These results demonstrated that the reactive solid-phase epitaxy is an efficient technique for fabricating LnCuOCh epitaxial films.

Fabrication of ScAlMgO4 epitaxial thin films using ScGaO3(ZnO)m buffer layers and its application to lattice-matched buffer layer for ZnO epitaxial growth

2008 ◽  
Vol 516 (17) ◽  
pp. 5842-5846 ◽  
Author(s):  
Takayoshi Katase ◽  
Kenji Nomura ◽  
Hiromichi Ohta ◽  
Hiroshi Yanagi ◽  
Toshio Kamiya ◽  
...  
Keyword(s):  
Thin Films ◽  
Epitaxial Growth ◽  
Buffer Layer ◽  
Buffer Layers ◽  
Epitaxial Thin Films ◽  
Lattice Matched

Synthesis of Epitaxial Thin-Films of Tetragonal Perovskites Via a Solution Technique

1998 ◽  
Vol 547 ◽  
Author(s):  
David B. Beach ◽  
Jonathan S. Morrell ◽  
Ziling B. Xue ◽  
Eliot D. Specht
Keyword(s):  
Thin Films ◽  
Single Crystal ◽  
Epitaxial Films ◽  
Solution Chemistry ◽  
Solution Technique ◽  
Epitaxial Thin Films ◽  
X Ray Diffraction ◽  
X Ray ◽  
Spin Casting

AbstractSolution chemistry has been used to synthesize epitaxial films of SrLaGaO4, SrPrGaO4, SrLaAlO4, and SrPrAlO4 on single crystal substrates of [100] SrTiO3 and [100] LaAlO3. Precursor solutions were prepared from metal methoxyethoxides in 2-methoxyethanol. Films were prepared by spin-casting from partially hydrolyzed solutions followed by firing for 20 minutes in air at 850°C. The structure of the films was determined using X-ray diffraction. Theta/2-theta scans and omega scans (rocking curves) indicated that the films were c-axis aligned. Phi scans proved that the films were also aligned in-plane.

Novel epitaxial growth of barium titanate thin films by electrodeposition

2000 ◽  
Vol 15 (12) ◽  
pp. 2583-2586 ◽  
Author(s):  
Jun Tamaki ◽  
Gregory K. L. Goh ◽  
Fred F. Lange
Keyword(s):  
Thin Films ◽  
Barium Titanate ◽  
Single Crystal ◽  
Epitaxial Growth ◽  
Counter Electrode ◽  
Epitaxial Films ◽  
Buffer Layers

Electrodeposition was used to grow epitaxially BaTiO3 thin films on SrTiO3 single-crystal substrates with La0.7Sr0.3MnO3 (LSMO) conducting buffer layers. The epitaxial films appeared to consist of very small (ø10 nm) particles. The film completely covered the substrate when the reaction was performed at temperatures between 60 and 90 °C with LSMO potentials of –0.5 to –1.0 V against a Pt counter-electrode. It appeared that an electrophoretic force, acting on BaTiO3 nuclei within the solution, facilitated the deposition of the film.

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