Processing effects on high Tc properties of YBa2Cu3O7−x films from carboxylate solution precursors

1993 ◽  
Vol 8 (2) ◽  
pp. 261-267 ◽  
Author(s):  
Peir-Yung Chu ◽  
Isabelle Campion ◽  
Relva C. Buchanan
Keyword(s):  
Thin Films ◽  
Heat Treatment ◽  
Superconducting Films ◽  
Treatment Temperature ◽  
Film Properties ◽  
High Tc ◽  
Post Annealing ◽  
Oriented Films ◽  
Processing Effects ◽  
Temperature Time

Heat-treatment temperature/time and ambient effects on the properties of YBa2Cu3O7−x superconducting films derived from carboxylate precursors were investigated. The thin films were processed under O2, N2, or N2/O2 mixed atmosphere. The use of N2 or N2-rich atmosphere facilitated the 123 phase formation, grain growth, and orientation due to liquid phase assist sintering. Thin films with Tc(zero) = 87.8 and Jc > 105 A/cm2 at 77 K were prepared under such atmosphere at T ≤ 920 °C. Higher temperatures were required for thin films processed under O2 atmosphere and inferior transport properties were obtained. Processing above the melting temperature resulted in highly oriented films with dense microstructures and large grains, but significant post annealing was needed to obtain good film properties.

Preparation of Y-Ba-Cu-O Superconducting Films by Modified Dc Sputtering Process

1987 ◽  
Vol 99 ◽  
Author(s):  
R. J. Lin ◽  
Y. C. Chen ◽  
J. H. Kung ◽  
P. T. Wu
Keyword(s):  
Thin Films ◽  
Heat Treatment ◽  
Perovskite Structure ◽  
Superconducting Films ◽  
Superconducting Thin Films ◽  
Adhesion Properties ◽  
High Tc ◽  
Dc Sputtering ◽  
Orthorhombic Perovskite ◽  
Excellent Adhesion

ABSTRACTHigh Tc Y-Ba-Cu-O superconducting thin films have been successfully deposited by DC sputtering techniques with excellent adhesion properties. Onset temperature of 95K had been achieved without any heat treatment nor annealing. Typical deposition rate is 1–2A/sec. It is possible to fabricate the superconducting thin films on a variety of substrates with this techniques, i.e., SiO2, Si and MgO. Analysis indicated that the films were predominantly the orthorhombic perovskite structure with traces of copper oxide.

Accelerating the formation of high-quality optical surface layer in ZnO thin films by the increase of heat-treatment temperature

Optik ◽  
2021 ◽  
Vol 232 ◽  
pp. 166527
Author(s):  
Haisu Qian ◽  
Linhua Xu ◽  
Fenglin Xian ◽  
Jing Su ◽  
Xiaoqiang Luo
Keyword(s):  
Thin Films ◽  
Heat Treatment ◽  
Surface Layer ◽  
Heat Treatment Temperature ◽  
Treatment Temperature ◽  
Zno Thin Films ◽  
Optical Surface ◽  
High Quality

Effect of Heat Treatment Temperature on the Formation of Ag Nanoparticles in Ag-PbTiO3Composite Thin Films

2009 ◽  
Vol 387 (1) ◽  
pp. 161-166 ◽  
Author(s):  
Zongrong Wang ◽  
Tao Hu ◽  
Liwen Tang ◽  
Chenlu Song ◽  
Gaorong Han ◽  
...  
Keyword(s):  
Thin Films ◽  
Heat Treatment ◽  
Ag Nanoparticles ◽  
Heat Treatment Temperature ◽  
Treatment Temperature

Impact of Heat Treatment on the Electrical Properties of LaNiO3 Conductive Thin Films

2007 ◽  
Vol 280-283 ◽  
pp. 873-876
Author(s):  
Sheng Guo Lu ◽  
Haydn Chen
Keyword(s):  
Thin Films ◽  
Heat Treatment ◽  
X Ray Diffraction ◽  
Electrical Measurements ◽  
Good Adhesion ◽  
Electrode Layer ◽  
Annealing Conditions ◽  
Post Annealing ◽  
Conductive Thin Films ◽  
The Ideal

LaNiO3 (LNO) has been used as bottom electrode layer for ferroelectric and antiferroelectric thin films due to its good conduction, preferred (100) orientation, same crystalline structure as many perovskite ferroelectrics and antiferroelectrics, good adhesion and compatibility with the Pt/Ti/SiO2/Si template. In this study we have investigated the ideal optimal post - annealing conditions for LaNiO3 thin films deposited at 450°C using a magnetron sputtering method. Heat treatment from 500 to 1200°C was performed. Scanning electron microscopy (SEM), x-ray diffraction (XRD) and electrical measurements were carried out to characterize the morphology, structure, and macroscopic properties. Results indicated that the LNO film had the best quality when annealed at about 800°C. Above this temperature, the morphology, structure and associated properties would deteriorate.

scholarly journals Structural and Optical Properties of CuInS2Thin Films Prepared by Magnetron Sputtering and Sulfurization Heat Treatment

2015 ◽  
Vol 2015 ◽  
pp. 1-8 ◽  
Author(s):  
Rongfeng Guan ◽  
Xiaoxue Wang ◽  
Qian Sun
Keyword(s):  
Thin Films ◽  
Heat Treatment ◽  
Magnetron Sputtering ◽  
Treatment Temperature ◽  
Gas Pressure ◽  
X Ray Diffraction ◽  
Raman Spectrometry ◽  
Optimization Of Process Parameters ◽  
Sputtering Power ◽  
Good Crystallinity

CuInS2thin films were prepared by sulfurization of Cu-In precursor films through magnetron sputtering and the resulting films characterized using X-ray diffraction, Raman spectrometry, and UV-Vis spectrophotometry. The results demonstrate that a sputtering power of 80–120 W is more suitable for sputtered Cu-In precursor films and can be used to obtain CuInS2films with good crystallinity through vulcanization heat treatment. The sputtering gas pressure and sulfurization temperature were shown to impact on the film quality due to improper processes during the CuInS2phase. Some of the CuIn11S17and CuS2impurities were observed in the composition of the prepared CuInS2thin films. Optimization of process parameters obtained from the experimental data was determined as a sputtering power of 80~120 W, a sputtering gas pressure of 0.6–0.8 Pa, a heat treatment temperature of 450~470°C, and a holding time of 2~3 hours. The optical band gap obtained for CuInS2thin films is between 1.48 and 1.5 eV.

Preparation and Use of Mosaic Target for the Deposition of Ferroelectric Bismuth Titanate Thin Films

1994 ◽  
Vol 361 ◽  
Author(s):  
P.K. Ghosh ◽  
M.E. Azimi
Keyword(s):  
Thin Films ◽  
Bismuth Titanate ◽  
Ion Beam ◽  
Ferroelectric Properties ◽  
Dielectric Behavior ◽  
Large Area ◽  
Film Properties ◽  
Low Field ◽  
Post Annealing ◽  
Substrate Temperatures

ABSTRACTIon beam sputter deposition using a Kaufman source is a well-established technique for fabricating thin films. This method has the capability for yielding smooth surfaces and depositing uniform films over a large area. We have used this technique, in the past, with a 5″ diameter target to deposit smooth ferroelectric bismuth titanate (Bi4Ti3O12) films. One of the major obstacles was fabricating the large target with the desired composition. To reduce cost by simplifying the target preparation process we developed a ‘mosaic’ target to deposit ferroelectric Bi4Ti3O12 films. Films were deposited at different substrate temperatures. Measurements show that the post-annealing of the deposited films results in measurable ferroelectric properties and enhanced low field dielectric behavior in the films. The discussion will include the target fabrication, the observed properties of the resultant films, and the effect of the deposition and post-annealing temperatures on the film properties.

Morphology of Acid-Cleaned Heat-Treated MgO (100) Surfaces

1993 ◽  
Vol 51 ◽  
pp. 964-965
Author(s):  
Simon King ◽  
C. Barry Carter
Keyword(s):  
Thin Films ◽  
Heat Treatment ◽  
Zone Axis ◽  
Ion Milling ◽  
Bright Field ◽  
Aqua Regia ◽  
High Tc ◽  
General Morphology ◽  
Heat Treated ◽  
Mgo Surface

The widespread use of the (100) MgO surface as a substrate for the deposition particularly of high-Tc super-conductors, and a wide variety of other materials such as titania, has provoked considerable interest in the morphology of the surfaces employed. In the above studies, (100) oriented MgO specimens have generally been prepared according to the method of Norton et al, in which foils are cleaned in acid, with the active ingredient being aqua-regia, after perforation by ion-milling and before a heat treatment in air, typically for 10-15 mins at 1350 °C. The surface morphology of specimens prepared in this manner is explored in this paper.Many of the features common to the aqua-regia cleaned and heat-treated thin-films are shown in the (100) zone-axis bright-field (BF) image of fig 1(a). The general morphology of these foils includes a high density of holes within the thinnest regions, whilst pores are in evidence in thicker areas.

Strong Hole Self-Doping in LaMnO3 Thin Film on a-SiO2 Substrate Produced by Metal Organic Decomposition Method

2019 ◽  
Vol 962 ◽  
pp. 17-21 ◽  
Author(s):  
Hiromi Kobori ◽  
Tohru Kitamura ◽  
Toshifumi Taniguchi ◽  
Tetsuo Shimizu
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Heat Treatment ◽  
Single Crystal ◽  
Decomposition Method ◽  
Treatment Conditions ◽  
Gas Atmosphere ◽  
Metal Organic ◽  
Temperature Time ◽  
Organic Decomposition

We have studied the strong hole self-doping into LaMnO3(LMO) thin films produced by metal organic decomposition (MOD) method. With different heat treatment conditions, LMO thin films have been prepared by the MOD method in the 100 % O2gas atmosphere. We consider that the excess of O2-ions in LMO thin films induces the strong hole self-doping into LMO ones. The quantity of excess O2-ions in LMO is sensitive to the heat treatment conditions of the LMO production, especially the temperature, time and atmosphere gas. Although LMO single crystal is an antiferromagnetic insulator, LMO thin films we have produced in the 100 % O2gas atmosphere by use of the MOD method shows the properties of ferromagnetic metal.

High-Tc Superconducting Films of Y-Ba-Cu Oxide Prepared by a Low Pressure Plasma Spraying

1987 ◽  
Vol 99 ◽  
Author(s):  
K. Tachikawa ◽  
I. Watanabe ◽  
S. Kosuge
Keyword(s):  
Plasma Spraying ◽  
Low Pressure ◽  
Superconducting Films ◽  
Transition Width ◽  
High Tc ◽  
Pressure Plasma ◽  
Post Annealing ◽  
Low Pressure Plasma ◽  
Zero Resistance ◽  
Low Pressure Plasma Spraying

ABSTRACTA low pressure plasma spraying technique for depositing high-Tc YBCO thick films has been developed. Films with thickness ranging 20–100 μm have been prepared using Y0.3Ba0.7CuOx powders. After post-annealing in oxygen for 1h at 930–950°C, the films, which were deposited on nimonic alloy substrate heated at 650°C during spraying, exhibited a zero resistance temperature of 90.6K with transition width (90%-10%) of 2K and a critical current density (77K, 0T) of 690 A/cm2.

Sign in / Sign up

Export Citation Format

Share Document