Preparation and Use of Mosaic Target for the Deposition of Ferroelectric Bismuth Titanate Thin Films

1994 ◽  
Vol 361 ◽  
Author(s):  
P.K. Ghosh ◽  
M.E. Azimi
Keyword(s):  
Thin Films ◽  
Bismuth Titanate ◽  
Ion Beam ◽  
Ferroelectric Properties ◽  
Dielectric Behavior ◽  
Large Area ◽  
Film Properties ◽  
Low Field ◽  
Post Annealing ◽  
Substrate Temperatures

ABSTRACTIon beam sputter deposition using a Kaufman source is a well-established technique for fabricating thin films. This method has the capability for yielding smooth surfaces and depositing uniform films over a large area. We have used this technique, in the past, with a 5″ diameter target to deposit smooth ferroelectric bismuth titanate (Bi4Ti3O12) films. One of the major obstacles was fabricating the large target with the desired composition. To reduce cost by simplifying the target preparation process we developed a ‘mosaic’ target to deposit ferroelectric Bi4Ti3O12 films. Films were deposited at different substrate temperatures. Measurements show that the post-annealing of the deposited films results in measurable ferroelectric properties and enhanced low field dielectric behavior in the films. The discussion will include the target fabrication, the observed properties of the resultant films, and the effect of the deposition and post-annealing temperatures on the film properties.

Fabrication of V-Substituted (Bi,M)4Ti3O12 [M = Lanthanoids] Thin Films by Chemical Solution Deposition Method

2001 ◽  
Vol 688 ◽  
Author(s):  
H. Uchida ◽  
H. Yoshikawa ◽  
I. Okada ◽  
H. Matsuda ◽  
T. Iijima ◽  
...  
Keyword(s):  
Thin Films ◽  
Chemical Solution Deposition ◽  
Bismuth Titanate ◽  
Ferroelectric Properties ◽  
Ferroelectric Materials ◽  
Processing Temperature ◽  
Chemical Solution ◽  
Si Substrate ◽  
Solution Deposition ◽  
Chemical Solution Deposition Method

AbstractBismuth titanate (Bi4Ti3O12; BIT) -based ferroelectric materials are proposed from the view of the “Site-engineering”, where the Bi-site ions are substituted by lanthanoid ions (La3+ and Nd3+) and Ti-site ions by other ions with higher charge valence (V5+). In the present study, influences of vanadium (V) - substitution for (Bi,M)4Ti3O12 thin films [M = lanthanoid] on the ferroelectric properties are evaluated. V-substituted (Bi,M)4Ti3O12 films have been fabricated using a chemical solution deposition (CSD) technique on the (111)Pt/Ti/SiO2/(100)Si substrate. Remnant polarization of (Bi,La)4Ti3O12 and (Bi,Nd)4Ti3O12 films has been improved by the V-substitution independent of the coercive field. The processing temperature of BLT and BNT films could also be lowered by the V-substitution.

Magnetoresistance and Structure of Granular Co/Ag Thin Films

1993 ◽  
Vol 313 ◽  
Author(s):  
Mary Beth Stearns ◽  
Yuanda Cheng
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Room Temperature ◽  
Magnetization Measurements ◽  
X Ray ◽  
Conduction Electrons ◽  
Low Field ◽  
Co Concentration ◽  
Microscopy Techniques ◽  
Substrate Temperatures

ABSTRACTSeveral series of CoxAg1-x granular thin films (-3000Å) were fabricated by coevapora-tion of Co and Ag in a dual e-beam UHV deposition system at varying substrate temperatures. These films have low field magnetoresistance values as large as 31% at room temperature and 65% at liquid N2 temperature. The structure of the films was determined using magnetization measurements as well as x-ray and various electron microscopy techniques. The composition was determined using Rutherford backscattering spectroscopy. The Magnetoresistance was measured at both room and liquid N2 temperatures.We deduce from the magnetization and RBS Measurements that the films consist of Co globules embedded in a Ag Matrix and that there is no appreciable mixing of the Co and Ag atoms in the films deposited at substrate temperatures ≥ 400°K. The size of the Co globules is seen to increase with increasing Co concentration and the maximum magnetoresistance occurs in those films having the smallest Ag thickness which provides magnetic isolation of the Co globules.We suggest that the large magnetoresistance of these films arises from the same mechanism which causes the low field magnetoresistance in pure ferromagnets, namely, the scattering of the highly polarized d conduction electrons of the Co at magnetic boundaries. The large increase in the room temperature magnetoresistance of the CO/Ag films as compared to those of pure 3d ferromagnetic films is due to the distance between the magnetic boundaries being reduced to a few nanometers, because of the small size of the single domain Co globules, as compared to a few microns in 3d ferromagnets.

Ferroelectric Property of Ion Beam Enhanced Deposited Lithium Tantalate Thin Film

2011 ◽  
Vol 335-336 ◽  
pp. 1418-1423
Author(s):  
De Yin Zhang ◽  
Wei Qian ◽  
Kun Li ◽  
Jian Sheng Xie
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Surface Morphology ◽  
Hysteresis Loop ◽  
Ferroelectric Property ◽  
Ion Beam ◽  
Ferroelectric Properties ◽  
Fatigue Property ◽  
Lithium Tantalate ◽  
Electric Filed

The Ion Beam Enhanced Deposited (IBED) lithium tantalate (LiTaO3) thin film samples with Al/LiTaO3/Pt electrode structure were prepared on the Pt/Ti/SiO2/Si(100) and SiO2/Si(100) substrate respectively. The crystallization, surface morphology, ferroelectric property, and fatigue property of the prepared samples with the different annealed processes were investigated. The XRD measured results show that the prepared samples have the polycrystal structure of LiTaO3 with the preferred orientation of <012> and <104> located at the 2θ of 23.60 and 32.70 respectively. The SEM morphology analysis reveals the prepared film annealed at 550°C is uniform, smooth and crack-free on the surface and cross section. The ferroelectric property measured results show that the remanent polarization Pr of the samples annealed at different temperature almost increase with the electric field intensity stronger. The leakage current makes the hysteresis loop of the samples subjected to a strong measured electric filed difficult to appear the same saturation hysteresis loop as the single-crystal LiTaO3. The prepared samples annealed at 550°C have a Pr value of 11.5μC/cm2 when subjected to the electrical field of 400kV/cm. The breakdown voltage of the 587nm thick thin film sample is high as to 680 kV/cm. The fatigue property measured results show only 15.17% Pr drop of the prepared films annealed at 550°C appear after 5×1010 cycles polarized by the 10MHz sinusoidal signal with the peak-to-peak amplitude of 10 Volt. The ferroelectric properties of the prepared films meet the practical application requirements of charge response measurement of the LiTaO3 infrared detector owe to the Pr of the prepared films annealed at different temperature large beyond 10μC/cm2 when the prepared films subjected to a strong electric filed larger than 400 kV/cm. The experimental results also show that the surface morphology, the ferroelectric and fatigue properties of the IBED LiTaO3 thin films are significant better than those of the Sol-Gel derived LiTaO3 thin films.

scholarly journals Partial Reduction/Re-Oxidation Processing of Y-Ba-Cu-O Sputtered Thin Films

1989 ◽  
Vol 169 ◽  
Author(s):  
F.H. Garzon ◽  
J. G. Beery ◽  
D. K. Wilde ◽  
I. D. Raistrick
Keyword(s):  
Thin Films ◽  
Rf Sputtering ◽  
Partial Reduction ◽  
Rf Power ◽  
X Ray Diffraction ◽  
X Ray ◽  
Post Annealing ◽  
Residual Oxygen ◽  
Ceramic Targets ◽  
Substrate Temperatures

AbstractThin films of Y‐Ba‐Cu‐O were produced by RF sputtering of YBa2Cu3O7‐x ceramic targets, using a variety of plasma compositions, RF power levels, and substrate temperatures. Post annealing of these films in oxygen produced superconducting films with Tc values between 40‐60 K, broad transition widths and semiconductor‐like electrical behavior above Tc. Subsequent annealing at 850°C in an inert gas with a residual oxygen partial pressure of ≤10 ppm followed by an oxygen anneal produced high quality thin films: Tc> 85 K with narrow transition widths. The structure and morphology of these films during reduction‐oxidation processing were monitored using X‐ray diffraction and electron microscopy.

scholarly journals Rapid and Scalable Wire-bar Strategy for Coating of TiO2 Thin-films: Effect of Post-Annealing Temperatures on Structures and Catalytic Dye-Degradation

Molecules ◽  
2020 ◽  
Vol 25 (7) ◽  
pp. 1683 ◽  
Author(s):  
P. Divya ◽  
S. Arulkumar ◽  
S. Parthiban ◽  
Anandarup Goswami ◽  
Tansir Ahamad ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Dye Degradation ◽  
Window Glass ◽  
Visible Range ◽  
Large Area ◽  
Tio2 Thin Films ◽  
Water Contact ◽  
Annealing Temperatures ◽  
Post Annealing

Titanium dioxide (TiO2) thin films were rapidly coated on Corning glass substrates from the precursor solution using the wire-bar technique at the room temperature and then post-annealed at 400, 500 and 600 °C for 1 h under atmospheric conditions. The structural, morphological, optical, wettability and photocatalytic properties of the films were studied. X-ray diffraction analysis confirmed the formation of an anatase TiO2 structure irrespective of the post-annealing temperatures. The optical transparency of the films in the visible range was measured to be > 70%. A water contact angle (WCA) of ~0° was observed for TiO2 thin-film, post-annealed at 400 °C and 500 °C. However, WCA of 40.3° was observed for post-annealed at 600 °C. The photocatalytic dye-degradation using post-annealed thin-film was investigated indicating a steady improvement in the dye-degradation percentage (from 24.3 to 29.4%) with the increase of post-annealing temperature. The demonstrated TiO2 thin-films deposited by wire-bar coating technique showed promises for the manufacturing of large-area cost-effective self-cleaning window glass.

Ferroelectric Properties and Microstructures of Tb4O7-Doped Bi4Ti3O12 Thin Films

2010 ◽  
Vol 105-106 ◽  
pp. 259-262 ◽  
Author(s):  
X.A. Mei ◽  
Min Chen ◽  
A.H. Cai ◽  
K.L. Su ◽  
Chong Qing Huang ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Layered Structure ◽  
Remanent Polarization ◽  
Single Phase ◽  
Bismuth Titanate ◽  
Ferroelectric Properties ◽  
Rf Magnetron Sputtering ◽  
Si Substrates ◽  
Remarkable Improvement

Tb4O7-doped bismuth titanate (BixTbyTi3O12 BTT) thin films were fabricated on Pt/Ti/SiO2/Si substrates by rf magnetron sputtering technique, and the microstructures and ferroelectric properties of the films were investigated. Microstructure studies indicate that all of BTT films with well-developed rod-like grains consist of single phase of a bismuth-layered structure without preferred orientation. The experimental results indicate that Tb doping into Bi4Ti3O12 results in a remarkable improvement in ferroelectric properties. The remanent polarization (Pr) and coercive field (Ec) of the BTT film with y=0.6 were 22 μC/cm2 and 85 kV/cm, respectively.

Physical Characterization of Zirconium Doped Zinc Oxide Thin Firms Deposited by Spray Pyrolysis

1998 ◽  
Vol 520 ◽  
Author(s):  
A. Maldonado ◽  
D.R. Acosta ◽  
M. De La Luz Olvera ◽  
R. Castanedo ◽  
G. Torres ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Zinc Oxide ◽  
Spray Pyrolysis ◽  
Doping Concentration ◽  
Film Properties ◽  
Preferential Growth ◽  
X Ray ◽  
Substrate Temperatures

ABSTRACTZinc oxide thin films doped with zirconium were prepared from solutions with doping material dispersed at several concentrations and using the spray pyrolysis technique.The films were deposited over sodocalcic glasses at different substrate temperatures. Effects of doping material concentration and substrate temperatures on electrical, optical, structural and morphological film properties are presented. Results show an evolution in morphology and grains size as the doping concentration is increased. Preferential growth in the (002) orientation was detected for each thin film from X ray diffractograms.

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