Mechanical properties of hot isostatically pressed Si3N4 and Si3N4/SiC composites

1993 ◽  
Vol 8 (3) ◽  
pp. 626-634 ◽  
Author(s):  
O. Unal ◽  
J.J. Petrovic ◽  
T.E. Mitchell
Keyword(s):  
Electron Microscopy ◽  
Mechanical Properties ◽  
Fracture Toughness ◽  
High Hardness ◽  
High Resolution Electron Microscopy ◽  
Transmission Electron ◽  
Resolution Electron ◽  
Sic Whiskers ◽  
Sic Composites ◽  
Increasing Temperature

The mechanical properties of hot isostatically pressed monolithic Si3N4 and Si3N4−20 vol. % SiC composites have been studied by microindentation at temperatures up to 1400 °C. Indentation crack patterns and microstructures have been examined by optical microscopy, scanning electron microscopy, and transmission electron microscopy. It is shown that dense Si3N4 base materials can be synthesized by HIPing without densification aids. Both the monolithic Si3N4 and the Si3N4/SiC composites exhibit high hardness values which gradually decrease with increasing temperature. Both types of material show low fracture toughness values apparently because of strong interfacial bonding. On the other hand, the fracture toughness of the composite is about 40% higher than that of the monolithic material, due to the presence of the 20 vol. % SiC whiskers. A crack deflection/debonding mechanism is likely to be responsible for the higher toughness observed in the composite. High resolution electron microscopy shows that the grain boundaries in both samples contain a thin SiO2 layer.

Interface structures in polycrystalline ceramic materials

1986 ◽  
Vol 44 ◽  
pp. 468-471
Author(s):  
K. J. Morrissey
Keyword(s):  
Electron Microscopy ◽  
Analytical Electron Microscopy ◽  
Physical And Mechanical Properties ◽  
High Resolution Electron Microscopy ◽  
Ceramic Materials ◽  
Polycrystalline Materials ◽  
Transmission Electron ◽  
Resolution Electron ◽  
Interface Structures

Grain boundaries and interfaces play an important role in determining both physical and mechanical properties of polycrystalline materials. To understand how the structure of interfaces can be controlled to optimize properties, it is necessary to understand and be able to predict their crystal chemistry. Transmission electron microscopy (TEM), analytical electron microscopy (AEM,), and high resolution electron microscopy (HREM) are essential tools for the characterization of the different types of interfaces which exist in ceramic systems. The purpose of this paper is to illustrate some specific areas in which understanding interface structure is important. Interfaces in sintered bodies, materials produced through phase transformation and electronic packaging are discussed.

High Resolution Transmission Electron Microscopy of an automobile catalytic converter

1990 ◽  
Vol 48 (4) ◽  
pp. 242-243
Author(s):  
Jan-Olle Malm ◽  
Jan-Olov Bovin
Keyword(s):  
Electron Microscopy ◽  
High Resolution ◽  
Catalytic Converter ◽  
Active Material ◽  
Image Intensifier ◽  
High Resolution Electron Microscopy ◽  
Detailed Knowledge ◽  
Transmission Electron ◽  
Resolution Electron ◽  
Atomic Surface

Understanding of catalytic processes requires detailed knowledge of the catalyst. As heterogeneous catalysis is a surface phenomena the understanding of the atomic surface structure of both the active material and the support material is of utmost importance. This work is a high resolution electron microscopy (HREM) study of different phases found in a used automobile catalytic converter.The high resolution micrographs were obtained with a JEM-4000EX working with a structural resolution better than 0.17 nm and equipped with a Gatan 622 TV-camera with an image intensifier. Some work (e.g. EDS-analysis and diffraction) was done with a JEM-2000FX equipped with a Link AN10000 EDX spectrometer. The catalytic converter in this study has been used under normal driving conditions for several years and has also been poisoned by using leaded fuel. To prepare the sample, parts of the monolith were crushed, dispersed in methanol and a drop of the dispersion was placed on the holey carbon grid.

Transmission electron microscopy observation in a liquid-phase-sintered SiC with oxynitride glass

2001 ◽  
Vol 16 (8) ◽  
pp. 2189-2191 ◽  
Author(s):  
Guo-Dong Zhan ◽  
Mamoru Mitomo ◽  
Young-Wook Kim ◽  
Rong-Jun Xie ◽  
Amiya K Mukherjee
Keyword(s):  
Electron Microscopy ◽  
Liquid Phase ◽  
High Resolution Electron Microscopy ◽  
Nitrogen Atmosphere ◽  
X Ray Diffraction ◽  
Sintering Additive ◽  
Transmission Electron ◽  
High Annealing ◽  
Resolution Electron ◽  
Oxynitride Glass

Using a pure α–SiC starting powder and an oxynitride glass composition from the Y–Mg–Si–Al–O–N system as a sintering additive, a powder mixture was hot-pressed at 1850 °C for 1 h under a pressure of 20 MPa and further annealed at 2000 °C for 4 h in a nitrogen atmosphere of 0.1 MPa. High-resolution electron microscopy and x-ray diffraction studies confirmed that a small amount of β–SiC was observed in the liquid-phase-sintered α–SiC with this oxynitride glass, indicating stability of β–SiC even at high annealing temperature, due to the nitrogen-containing liquid phase.

Structure of InAs Quantum Dots in Si Matrix Investigated by High Resolution Electron Microscopy

1999 ◽  
Vol 571 ◽  
Author(s):  
N. D. Zakharov ◽  
P. Werner ◽  
V. M. Ustinov ◽  
A.R. Kovsh ◽  
G. E. Cirlin ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
High Resolution ◽  
Critical Thickness ◽  
High Resolution Electron Microscopy ◽  
Geometrical Parameters ◽  
Inas Quantum Dots ◽  
Temperature Growth ◽  
Transmission Electron ◽  
Resolution Electron

ABSTRACTQuantum dot structures containing 2 and 7 layers of small coherent InAs clusters embedded into a Si single crystal matrix were grown by MBE. The structure of these clusters was investigated by high resolution transmission electron microscopy. The crystallographic quality of the structure severely depends on the substrate temperature, growth sequence, and the geometrical parameters of the sample. The investigation demonstrates that Si can incorporate a limited volume of InAs in a form of small coherent clusters about 3 nm in diameter. If the deposited InAs layer exceeds a critical thickness, large dislocated InAs precipitates are formed during Si overgrowth accumulating the excess of InAs.

Silicon-Sapphire Interface: A High Resolution Electron Microscopy Study

1980 ◽  
Vol 2 ◽  
Author(s):  
Fernando A. Ponce
Keyword(s):  
Electron Microscopy ◽  
High Resolution ◽  
Silicon Layer ◽  
High Resolution Electron Microscopy ◽  
Microscopy Study ◽  
Electron Microscopy Study ◽  
Resolution Limit ◽  
High Concentration ◽  
Transmission Electron ◽  
Resolution Electron

ABSTRACTThe structure of the silicon-sapphire interface of CVD silicon on a (1102) sapphire substrate has been studied in crøss section by high resolution transmission electron microscopy. Multibeam images of the interface region have been obtained where both the silicon and sapphire lattices are directly resolved. The interface is observed to be planar and abrupt to the instrument resolution limit of 3 Å. No interfacial phase is evident. Defects are inhomogeneously distributed at the interface: relatively defect-free regions are observed in the silicon layer in addition to regions with high concentration of defects.

Structure, Composition and Stability of Heterophase Boundaries

1997 ◽  
Vol 3 (S2) ◽  
pp. 673-674
Author(s):  
M. Rühle ◽  
T. Wagner ◽  
S. Bernath ◽  
J. Plitzko ◽  
C. Scheu ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Elevated Temperatures ◽  
Analytical Electron Microscopy ◽  
High Resolution Electron Microscopy ◽  
Advanced Materials ◽  
Bulk Crystals ◽  
Transmission Electron ◽  
Resolution Electron ◽  
The Stability

Heterophase boundaries play an important role in advanced materials since those materials often comprise different components. The properties of the materials depend strongly on the properties of the interface between the components. Thus, it is important to investigate the stability of the microstructure with respect to annealing at elevated temperatures. In this paper results will be presented on the structure and composition of the interfaces between Cu and (α -Al2O3. The interfaces were processed either by growing a thin Cu overlayer on α- Al2O3 in a molecular beam epitaxy (MBE) system or by diffusion bonding bulk crystals of the two constituents in an UHV chamber. To improve the adhesion of Cu to α -Al2O3 ultrathin Ti interlayers were deposited between Cu and α - Al2O3.Interfaces were characterized by different transmission electron microscopy (TEM) techniques. Quantitative high-resolution electron microscopy (QHRTEM) allows the determination of the structure (coordinates of atoms) while analytical electron microscopy (AEM) allows the determination of the composition with high spatial resolution.

Phase Diagram Determination For Modifications Of The D Phase In The Al-AlCo-AINi System

1998 ◽  
Vol 553 ◽  
Author(s):  
R. Lück ◽  
M. Scheffer ◽  
T. Gödecke ◽  
S. Ritschj ◽  
C. Beelif
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Liquidus Projection ◽  
High Resolution Electron Microscopy ◽  
Reaction Scheme ◽  
Decagonal Phase ◽  
Transmission Electron ◽  
Resolution Electron ◽  
In Situ Experiments ◽  
Projection Surface

AbstractAn extensive investigation into the At-AICo-AlNi ternary subsystem is presented. Observations have used the techniques of differential thermal analysis, magnetothermal analysis, dilatometry, metallography, X-ray diffraction, transmission electron microscopy, and high-resolution electron microscopy. Representative graphic documentation, as liquidus projection surface, isothermal sections, temperature-concentration section, and reaction scheme are presented. 11 phases from the binaries Al-Co and Al-Ni and the three ternary phases Y2 (Co2NiAl9), X and the decagonal phase D were found at room temperature. The decagonal phase is formed from the melt peritectically via a critical tie line and its primary formation area dominates at the liquidus projection surface. 45 three-phase regions are present according to the reaction scheme.Several phase variants in the area of the decagonal phase were detected by transmission electron microscopy. Phase fields of the variants were determined from samples quenched from their respective temperatures. In-situ experiments on transformations of variants were performed by dilatometric measurements. The subdivision of the D phase area into the fields of the variants is discussed.

Advanced Computing in Electron Microscopy, Earl J. Kirkland 1998. Plenum Press, New York and London. 260 pages. ($72.50)

1999 ◽  
Vol 5 (5) ◽  
pp. 371-372
Author(s):  
John Spence
Keyword(s):  
Electron Microscopy ◽  
New York ◽  
Recent Observation ◽  
High Resolution Electron Microscopy ◽  
Atomic Level ◽  
Phase Identification ◽  
Transmission Electron ◽  
Resolution Electron ◽  
New Material ◽  
Advanced Computing

The recent observation of Bucky-tubes by S. Iijima using a transmission electron microscope (TEM) represents the first occasion in which a useful new material, subsequently available in commercial quantities, has been discovered by high-resolution electron microscopy (HREM). More commonly, the HREM method has been used for microcharacterization of materials at the atomic level, and for phase identification of submicrometer-sized microphases and polytypes.

Self-Catalytic Branch Growth of SnO2Nanowire Junctions

2004 ◽  
Vol 818 ◽  
Author(s):  
Y. X. Chen ◽  
L. J. Campbell ◽  
W. L. Zhou
Keyword(s):  
Electron Microscopy ◽  
Thermal Evaporation ◽  
High Resolution Electron Microscopy ◽  
Microscopy Observation ◽  
Rutile Structure ◽  
Nanoparticle Catalysts ◽  
Transmission Electron ◽  
Resolution Electron ◽  
Scanning Electron Microcopy ◽  
Sn Nanoparticle

AbstractMultiple branched SnO2 nanowire junctions have been synthesized by thermal evaporation of SnO powder. Their nanostructures were studied by transmission electron microscopy and field emission scanning electron microcopy. It was observed that Sn nanoparticles generated from decomposition of the SnO powder acted as self-catalysts to control the SnO2 nanojunction growth. Orthorhombic SnO2 was found as a dominate phase in nanojunction growth instead of rutile structure. The branches and stems of nanojunctions were found to be an epitaxial growth by electron diffraction analysis and high resolution electron microscopy observation. The growth directions of the branched SnO2 nanojunctions were along the orthorhombic [110] and [1 1 0]. The growth of SnO2 nanojunction is controlled by a self-catalytic vapor-liquid-solid growth using Sn nanoparticle catalysts.

Sign in / Sign up

Export Citation Format

Share Document