Microscopy and microindentation mechanics of single crystal Fe−3 wt. % Si: Part I. Atomic force microscopy of a small indentation

1993 ◽  
Vol 8 (6) ◽  
pp. 1291-1299 ◽  
Author(s):  
S. Harvey ◽  
H. Huang ◽  
S. Venkataraman ◽  
W.W. Gerberich
Keyword(s):  
Plastic Zone ◽  
Single Crystal ◽  
Surface Displacement ◽  
Plastic Zone Size ◽  
Force Microscopy ◽  
Elastic Plastic ◽  
Atomic Force ◽  
Plastic Indentation ◽  
Volume Estimates ◽  
Small Indentation

Atomic force microscope measurements of elastic-plastic indentation into an Fe−3 wt. % Si single crystal showed that the volume displaced to the surface is nearly equal to the volume of the cavity. The surface displacement profiles and plastic zone size caused by a 69 nm penetration of a Vickers diamond tip are reasonably represented by an elastic-plastic continuum model. Invoking conservation of volume, estimates of the number of dislocations emanating from the free surface are reasonably consistent with the number of dislocations that have formed in the plastic zone to represent an average calculated plastic strain of 0.044.

scholarly journals Substrate effects on indentation plastic zone development in thin soft films

2001 ◽  
Vol 16 (11) ◽  
pp. 3150-3157 ◽  
Author(s):  
D. E. Kramer ◽  
A. A. Volinsky ◽  
N. R. Moody ◽  
W. W. Gerberich
Keyword(s):  
Plastic Zone ◽  
Plastic Zone Size ◽  
Contact Radius ◽  
Force Microscopy ◽  
Atomic Force ◽  
Film Hardness ◽  
Substrate Properties ◽  
Zone Development ◽  
Hardness Model ◽  
Zone Radius

Plastic zone evolution in Al–2 wt% Si metal films on silicon and sapphire substrates was studied using nanoindentation and atomic force microscopy (AFM). AFM was used to measure the extent of plastic pileup, which is a measure of the plastic zone radius in the film. It was found that the plastic zone size develops in a self-similar fashion with increasing indenter penetration when normalized by the contact radius, regardless of film hardness or underlying substrate properties. This behavior was used to develop a hardness model that uses the extent of the plastic zone radius to calculate a core region within the indenter contact that is subject to an elevated contact pressure. AFM measurements also indicated that as film thickness decreases, constraint imposed by the indenter and substrate traps the film thereby reducing the pileup volume.

scholarly journals Interface Structures and Electronic States of Epitaxial Tetraazanaphthacene on Single-Crystal Pentacene

Materials ◽  
2021 ◽  
Vol 14 (5) ◽  
pp. 1088
Author(s):  
Yuki Gunjo ◽  
Hajime Kamebuchi ◽  
Ryohei Tsuruta ◽  
Masaki Iwashita ◽  
Kana Takahashi ◽  
...  
Keyword(s):  
Single Crystal ◽  
Photoelectron Spectroscopy ◽  
Grazing Incidence ◽  
Force Microscopy ◽  
Interface Dipole ◽  
Atomic Force ◽  
Interfacial Structures ◽  
Donor And Acceptor ◽  
A Charge ◽  
Interface Structures

The structural and electronic properties of interfaces composed of donor and acceptor molecules play important roles in the development of organic opto-electronic devices. Epitaxial growth of organic semiconductor molecules offers a possibility to control the interfacial structures and to explore precise properties at the intermolecular contacts. 5,6,11,12-tetraazanaphthacene (TANC) is an acceptor molecule with a molecular structure similar to that of pentacene, a representative donor material, and thus, good compatibility with pentacene is expected. In this study, the physicochemical properties of the molecular interface between TANC and pentacene single crystal (PnSC) substrates were analyzed by atomic force microscopy, grazing-incidence X-ray diffraction (GIXD), and photoelectron spectroscopy. GIXD revealed that TANC molecules assemble into epitaxial overlayers of the (010) oriented crystallites by aligning an axis where the side edges of the molecules face each other along the [1¯10] direction of the PnSC. No apparent interface dipole was found, and the energy level offset between the highest occupied molecular orbitals of TANC and the PnSC was determined to be 1.75 eV, which led to a charge transfer gap width of 0.7 eV at the interface.

Operando atomic force microscopy study of electric double-layer transistors based on ionic liquid/rubrene single crystal interfaces

2021 ◽  
Vol 118 (24) ◽  
pp. 243301
Author(s):  
Yusuke Morino ◽  
Yasuyuki Yokota ◽  
Ken-ichi Bando ◽  
Hisaya Hara ◽  
Akihito Imanishi ◽  
...  
Keyword(s):  
Atomic Force Microscopy ◽  
Ionic Liquid ◽  
Single Crystal ◽  
Double Layer ◽  
Electric Double Layer ◽  
Microscopy Study ◽  
Atomic Force Microscopy Study ◽  
Force Microscopy ◽  
Atomic Force ◽  
Crystal Interfaces

2 MeV PROTON IRRADIATION EFFECTS ON ZnO SINGLE CRYSTAL

2014 ◽  
Vol 21 (01) ◽  
pp. 1450012 ◽  
Author(s):  
T. SECHOGELA ◽  
L. KOTSEDI ◽  
M. NKOSI ◽  
C. SANDT ◽  
R. MADJOE ◽  
...  
Keyword(s):  
Surface Roughness ◽  
Single Crystal ◽  
Proton Irradiation ◽  
Proton Bombardment ◽  
Irradiation Effects ◽  
Force Microscopy ◽  
Atomic Force ◽  
Surface Alteration ◽  
Zno Crystal ◽  
Zno Single Crystal

Melt grown ZnO single crystal was irradiated with varying fluence of 2 MeV proton beam in the range of 1 × 1016 H +/cm2 to 5 × 1017 H +/cm2. The irradiated spots exhibited varying degree of discoloration due to the irradiation indicating surface and volume defects. The surface roughness of the irradiated spots was measured using atomic force microscopy indicating surface modification of the sample. The extent of the damage on the ZnO single crystal from radiation was assessed using Raman spectroscopy. The emergence of the A1( LO ) band at 579 cm-1 pointed to the significant surface alteration in the ZnO crystal due to proton bombardment.

Surface observations of synthetic hydroxyapatite single crystal by atomic force microscopy

1995 ◽  
Vol 148 (1-2) ◽  
pp. 201-206 ◽  
Author(s):  
Kazuo Onuma ◽  
Atsuo Ito ◽  
Tetsuya Tateishi ◽  
Tetsuya Kameyama
Keyword(s):  
Atomic Force Microscopy ◽  
Single Crystal ◽  
Force Microscopy ◽  
Atomic Force ◽  
Synthetic Hydroxyapatite ◽  
Surface Observations

Tribochemical wear of single crystal aluminum in NaCl solution studied by atomic force microscopy

2011 ◽  
Vol 110 (6) ◽  
pp. 063509 ◽  
Author(s):  
M. Cai ◽  
S. C. Langford ◽  
J. T. Dickinson
Keyword(s):  
Atomic Force Microscopy ◽  
Single Crystal ◽  
Nacl Solution ◽  
Force Microscopy ◽  
Atomic Force

Effect of Glass Composition on Mechanical Properties of Interfaces Between Alumina and Silicate Glass

1996 ◽  
Vol 458 ◽  
Author(s):  
Andrey V. Zagrebelny ◽  
Erica T. Lilleodden ◽  
C. Barry Carter
Keyword(s):  
Mechanical Properties ◽  
Single Crystal ◽  
Silicate Glass ◽  
Glass Composition ◽  
Depth Sensing ◽  
Force Microscopy ◽  
Atomic Force ◽  
Afm Imaging ◽  
Force Displacement

ABSTRACTInterfaces between glass and crystalline grains have been examined using a thin-film geometry which allows the use of newly developed experimental methods for micromechanical testing of interfaces. In this approach, continuous films of thicknesses ranging 100–200 nm of anorthite (CaAl2Si2O8), celsian (BaAl2Si2O8), and monticellite (CaMgSiO4) are deposited onto single-crystal Al2O3 (α-structure) surfaces of different crystallographic orientations by pulsed-laser deposition (PLD).Mechanical properties such as hardness, stiffness, and reduced Young's modulus were probed with a newly developed high-resolution depth-sensing indentation instrument. Emphasis has been placed on examining how changes in the glass composition will affect the mechanical properties of the single-crystal Al2O3/silicate-glass interfaces. The indentation data obtained from these experiments correlate directly to the morphology of the deformed regions imaged with atomic force microscopy (AFM). Nanomechanical tests combined with AFM imaging of the deformed regions allow force-displacement measurements and in-situ imaging of the same regions of the specimen before and immediately after indentation. This new technique eliminates the uncertainty of locating the indenter after unloading.

Kinetics of Linear Defect Formation in Gallia-Doped Rutile.

2004 ◽  
Vol 849 ◽  
Author(s):  
Nathan Empie ◽  
Doreen Edwards
Keyword(s):  
Single Crystal ◽  
Defect Formation ◽  
Sol Gel ◽  
Surface Concentration ◽  
Thermal Treatments ◽  
Rutile Structure ◽  
Force Microscopy ◽  
Linear Defects ◽  
Atomic Force ◽  
Kinetics Of

ABSTRACTThe diffusion of Ga2O3 into the surface of single crystal[001] rutile leads to the insertion of β-gallia subunits along {210} planes of the parent rutile structure. These linear defects introduce hexagonally shaped tunnels, approximately 2.5 å in diameter, normal to the]001] surface. Because these tunnels may serve as highly reactive sites for the attachment of macromolecules, we are exploring the application of these linear defects for creating nanostructures. The current work investigates the kinetics of defect formation and the factors that affect defect periodicity and orientation. Gallium oxide was applied to the surfaces of [001]-oriented TiO2 single-crystal substrates via a sol-gel spin-coating process using a gallium-containing precursor. Thermal treatments were systematically varied to obtain different defect surface structures. Defect orientation and the surface concentration of rows of defects were characterized via tapping mode atomic force microscopy.

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