Preferred orientation and microstructure of Ni-Zn-Cu ferrite thin films deposited by rf magnetron sputtering

1994 ◽  
Vol 9 (9) ◽  
pp. 2425-2433 ◽  
Author(s):  
Hae Seok Cho ◽  
Min Hong Kim ◽  
Hyeong Joon Kim
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Process Parameters ◽  
Rf Magnetron Sputtering ◽  
Preferred Orientation ◽  
Ferrite Film ◽  
Rf Power ◽  
Columnar Grains ◽  
Ferrite Thin Films ◽  
Ferrite Films

We have investigated the effects of process parameters such as rf power, substrate, and gas pressure PAr on preferred orientation, microstructure, and magnetic properties of Ni-Zn-Cu ferrite thin films deposited by conventional rf magnetron sputtering. The texture structure was developed in the ferrite films deposited on the SiO2/Si(100) substrate at low rf power conditions. The ferrite film on the Si(111) substrate always had (111) texture irrespective of process parameters due to lattice matching, but the texture of the ferrite film on SiO2/Si(100) changed from (111) to (100) and finally returned to (111) orientation again with decreasing PAr. Such behavior would occur presumably due to the characteristic atomic stacking sequence corresponding to a given condition of the ion bombardment. The ferrite films deposited at low PAr had a denser microstructure consisting of tightly packed columnar grains with a smoother surface, better adhesion to the substrate, and better crystallinity than those at high PAr. Hc‖ of ferrite film deposited at low PAr was larger than that at high PAr and also larger than Hc⊥ of that deposited at the same PAr because larger compressive stress was induced at low PAr than at high PAr.

The Structure and Magnetic Properties of NiZn-Ferrite Films Deposited by Magnetron Sputtering at Room Temperature

2013 ◽  
Vol 690-693 ◽  
pp. 1702-1706 ◽  
Author(s):  
Shuang Jun Nie ◽  
Hao Geng ◽  
Jun Bao Wang ◽  
Lai Sen Wang ◽  
Zhen Wei Wang ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetic Properties ◽  
Magnetron Sputtering ◽  
Saturation Magnetization ◽  
Room Temperature ◽  
Oxygen Flow ◽  
Flow Ratio ◽  
Study Results ◽  
Ferrite Thin Films ◽  
Ferrite Films

NiZn-ferrite thin films were deposited onto silicon and glass substrates by radio frequency magnetron sputtering at room temperature. The effects of the relative oxygen flow ratio on the structure and magnetic properties of the thin films were investigated. The study results reveal that the films deposited under higher relative oxygen flow ratio show a better crystallinity. Static magnetic measurement results indicated that the saturation magnetization of the films was greatly affected by the crystallinity, grain dimension, and cation distribution in the NiZn-ferrite films. The NiZn-ferrite thin films with a maximum saturation magnetization of 151 emucm-3, which is about 40% of the bulk NiZn ferrite, was obtained under relative oxygen flow ratio of 60%.

Comparison Between In-situ Annealing and External Annealing For Barium Ferrite Thin Films Made by RF Magnetron Sputtering

2005 ◽  
Vol 875 ◽  
Author(s):  
A. R. Abuzir ◽  
W. J. Yeh
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Saturation Magnetization ◽  
Barium Ferrite ◽  
Rf Magnetron Sputtering ◽  
Silicon Substrates ◽  
Axis Orientation ◽  
Average Value ◽  
Ferrite Thin Films

AbstractDue to their large magnetic anisotropy perpendicular to the film plane, barium ferrite thick films (BaFe12O19, or BaM) with c-axis orientation are attractive candidates for microwave applications [1,2]. Barium ferrite thin films on silicon substrates without under layer have been deposited under various conditions by RF magnetron sputtering. The structure of the as-grown films is amorphous. External annealing in air has been done at 950°C for ten minutes to crystallize the films. C-axis oriented thin films with squareness of about 0.87 and coercivity of about 3.8KOe are obtained.Thick BaM films with c-axis orientation are difficult to achieve with one single deposition. Multilayer technique looks promising to grow thick films [3]. The external annealing process is difficult to incorporate with the multilayer procedure. An in-situ annealing procedure has been developed to obtain films, which can be used as the basic component for future multilayer deposition. Barium ferrites are first magnetron sputtered on bare silicon substrates in Ar + O2 atmosphere at substrate temperature of 500-600°C, the deposition pressure was kept about 0.008 torr. After the deposition, the temperature of the substrate is immediately increased to about 860°C for ten minutes in 140 torr of argon (80%) and oxygen (20%) mixture of gas, which was introduced into the chamber without breaking the vacuum. With the in-situ process, c-axis oriented thin films of 0.88 squareness and coercivity value of about 4.3KOe are obtained.Both annealing methods seem to have the similar effect on the perpendicular squareness and coercivity at various film thicknesses. The average value of the saturation magnetization Ms obtained from the in-situ annealing using multilayer technique is higher than that of the external one. We have grown films up to 1.0 micron thickness using the multilayer technique, in which three layers of 0.3 μm thickness each are deposited until the final thickness is reached. After the deposition of each layer, it was in-situ annealed before starting the deposition of the next layer. With the multilayer technique, coercivity of about 3.5 KOe and average value of the saturation magnetization Ms of about 4.0 K Gauss is obtained.

Sensitivity of ZnO Based NH3 Sensor by RF Magnetron Sputtering

2012 ◽  
Vol 626 ◽  
pp. 168-172
Author(s):  
Samsiah Ahmad ◽  
Nor Diyana Md Sin ◽  
M.N. Berhan ◽  
Mohamad Rusop
Keyword(s):  
Thin Films ◽  
Zinc Oxide ◽  
Magnetron Sputtering ◽  
Radio Frequency ◽  
Structural Properties ◽  
Rf Magnetron Sputtering ◽  
Xrd Analysis ◽  
Zno Thin Films ◽  
Rf Power ◽  
Si Substrates

Zinc Oxide (ZnO) thin films were deposited onto SiO2/Si substrates using radio frequency (RF) magnetron sputtering method as an Ammonia (NH3) sensor. The dependence of RF power (50~300 Watt) on the structural properties and sensitivity of NH3sensor were investigated. XRD analysis shows that regardless of the RF power, all samples display the preferred orientation on the (002) plane. The results show that the ZnO deposited at 200 Watt display the highest sensitivity value which is 44%.

The Preparation of ZnO: Al Thin Films on Flexible Substrates by Magnetron Sputtering Method

2014 ◽  
Vol 989-994 ◽  
pp. 65-68
Author(s):  
Xiao Jing Wang
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Buffer Layer ◽  
Compressive Stress ◽  
Lattice Constant ◽  
Rf Magnetron Sputtering ◽  
Hexagonal Structure ◽  
Preferred Orientation ◽  
Flexible Substrates ◽  
Average Transmittance

ZnO: Al film was deposited on TPT substrate with SiO2 buffer layer by RF magnetron sputtering. The obtained film had a hexagonal structure and highly (002) preferred orientation. The lattice constant distortion of the film with buffer layer was decreased and the compressive stress was 0.779GPa. The carrier concentratio reached to 3.15×10+20/cm3. The resistivity of ZAO film with SiO2 buffer layer was about 9.2×10-3 Ω·cm and the average transmittance was over 72% in the range of 380~900nm.

Investigation of Nanostructure and Optical Properties of Flexible AZO Thin Films at Different Powers of RF Magnetron Sputtering

NANO ◽  
2018 ◽  
Vol 13 (06) ◽  
pp. 1850062 ◽  
Author(s):  
Sh. Khatami ◽  
L. Fekri Aval ◽  
G. Behzadi Pour
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Magnetron Sputtering ◽  
Rf Magnetron Sputtering ◽  
Rf Power ◽  
X Ray Diffraction ◽  
Light Emitting ◽  
Structure Morphology ◽  
Xrd Patterns ◽  
Predominant Direction

In this study Al-doped Zinc Oxide (AZO) thin films were successfully deposited on the flexible Polymethyl methacrylate (PMMA) substrate by RF magnetron sputtering. The effects of RF power on the crystal structure, morphology, thickness and optical properties of AZO thin films have been investigated. The AZO thin films were analyzed using X-ray diffraction (XRD), field emission scanning electron microscopy (FESEM), DEKTAK 3 profilometer, UV–Visible spectroscopy and room temperature photoluminescence (PL) spectroscopy. The XRD patterns show that increase of RF power leads to increase in the predominant direction along (100) and crystal plane of hexagonal ZnO. Moreover, the transmittance of thin films decreased from 76% to 61% and optical bang gap varied among 3.34[Formula: see text]eV to 3.22[Formula: see text]eV with increasing RF power. The PL spectra show excellent light-emitting characteristics: 375[Formula: see text]nm, 428[Formula: see text]nm, 467[Formula: see text]nm and 505[Formula: see text]nm. The results indicate that the peak intensity increases with increasing RF power from 80[Formula: see text]W to 180[Formula: see text]W.

Electrical and Optical Properties of ZnO-Doped Zr0.8Sn0.2TiO4 Thin Films on ITO/Glass Substrates by RF Magnetron Sputtering

2011 ◽  
Vol 687 ◽  
pp. 70-74
Author(s):  
Cheng Hsing Hsu ◽  
His Wen Yang ◽  
Jenn Sen Lin
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Magnetron Sputtering ◽  
Substrate Temperature ◽  
Visible Region ◽  
Rf Magnetron Sputtering ◽  
Rf Power ◽  
Electrical And Optical Properties ◽  
Glass Substrates ◽  
Ito Glass

Electrical and optical properties of 1wt% ZnO-doped (Zr0.8Sn0.2)TiO4thin films prepared by rf magnetron sputtering on ITO/Glass substrates at different rf power and substrate temperature were investigated. The surface structural and morphological characteristics analyzed by X-ray diffraction (XRD) and atomic force microscope (AFM) were found to be sensitive to the deposition conditions, such as rf power and substrate temperature. The selected-area diffraction pattern showed that the deposited films exhibited a polycrystalline microstructure. All films exhibited ZST (111) orientation perpendicular to the substrate surface and the grain size as well as the deposition rate of the film increased with the increase in both the rf power and the substrate temperature. Optical transmittance spectroscopy further revealed high transparency (over 60%) in the visible region of the spectrum.

Orientation Characteristics with Process Parameters of PLZT(X/70/100) Thin Films Prepared by RF-Magnetron Sputtering

1997 ◽  
Vol 472 ◽  
Author(s):  
S.K. Kang ◽  
M.S. Park ◽  
D.B. Kim ◽  
K.S. No ◽  
S.H. Cho
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Substrate Temperature ◽  
Process Parameters ◽  
Surface Characterization ◽  
Rf Magnetron Sputtering ◽  
Gas Pressure ◽  
Axis Orientation ◽  
X Ray ◽  
Dominant Influence

ABSTRACTPLZT(X/70/100) thin films on MgO(100), Pt/Ti/MgO(100), and Pt/Ti/Si(100) have been prepared by RF-magnetron sputtering process from sintered target with compositions of PLZT(X/70/100), where X=5, 10, and 15, respectively. The effects of substrate temperature, substrate and gas pressure on deposited thin films were studied. Crystalline and surface characterization was analyzed using XRD, SEM, AES, and AFM. X-ray rocking curves were measured to examine the film orientation. It was observed that the gas pressure was the dominant influence on having (001) preferred orientation. As a result, the degree of c-axis orientation increased as gas pressure decreased.

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