Room temperature copolymerization to improve the thermal and dielectric properties of polyxylylene thin films by chemical vapor deposition

Polyxylylene thin films grown by chemical vapor deposition (CVD) have long been utilized for uniform, pinhole-free conformal coatings. Homopolymer films are highly crystalline and have a glass transition temperature around room temperature. We show room temperature copolymerization with previously untested comonomers during the CVD process. Samples were studied with wavelength dispersive analysis, FTIR, scanning variable angle ellipsometry, and x-ray diffraction. Copolymerizing chloro-p-xylylene with perfluoro-octyl methacrylate results in dielectric constants at optical frequencies as low as 2.19, compared to 2.68 for the homopolymer. Copolymerizing p-xylylene with 4-vinylbiphenyl resulted in films whose onset of weight loss in TGA measurements was 450 °C, compared to 270 °C for the homopolymer.

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Zinc Oxide Nano Walls Synthesized by Chemical Vapor Deposition

Key Engineering Materials ◽

10.4028/www.scientific.net/kem.608.127 ◽

2014 ◽

Vol 608 ◽

pp. 127-131 ◽

Cited By ~ 4

Author(s):

Suttinart Noothongkaew ◽

Supakorn Pukird ◽

Worasak Sukkabot ◽

Ki Seok An

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Room Temperature ◽

Chemical Vapor ◽

Green Emission ◽

X Ray Diffraction ◽

Ultraviolet Emission ◽

Axis Orientation ◽

X Ray ◽

Zno Nanostructure

ZnO nanowalls were synthesized by chemical vapor deposition at temperature of 650 °C for 1 hour on the silicon substrate. The morphologies of samples were characterized by scanning electron microscopy (SEM). The result from X-ray diffraction (XRD) confirmed that the ZnO nanowalls were vertical c-axis orientation. A room temperature Photoluminescence peak at 378 nm is ultraviolet emission (UV) and the broad peak at wavelengths around 450-650 nm is corresponding to the green emission of ZnO nanostructure. This synthesis may be applicable for gas sensor or solar cells.

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Low Dielectric Constant, High Temperature Stable Copolymer Thin Films by Room Temperature Chemical Vapor Deposition

MRS Proceedings ◽

10.1557/proc-343-541 ◽

1994 ◽

Vol 343 ◽

Author(s):

Justin F. Gaynor ◽

Seshu B. Desu

Keyword(s):

Thin Films ◽

Dielectric Constant ◽

Chemical Vapor Deposition ◽

Vapor Deposition ◽

High Speed ◽

Room Temperature ◽

Chemical Vapor ◽

Low Dielectric Constant ◽

Low Dielectric ◽

Conformal Coatings

ABSTRACTPolyxylylene thin films grown by the chemical vapor deposition (CVD) process have long been utilized to achieve uniform, pinhole-free conformal coatings. They have recently been cited as possible low dielectric constant films for intermetal layers in high-speed ICs. Homopolymer films are highly crystalline and have a glass transition temperature around room temperature. We have demonstrated that room temperature copolymerization with previously untested comonomers can be achieved during the CVD process. Copolymerizing chloro-p-xylylene with perfluorooctyl methacrylate results in the dielectric constant at optical frequencies being lowered from 2.68 to 2.19. Copolymerizing p-xylylene with vinylbiphenyl resulted in films which increase the temperature at which oxidative scission occurs from 320 to 450C. Copolymerizing p-xylylene with 9-vinylanthracene resulted in a brittle, yellow film.

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Microcharacterization of liquid delivery metalorganic chemical vapor deposition processed thin film materials exhibiting giant magnetoresistance

Journal of Materials Research ◽

10.1557/jmr.1999.0271 ◽

1999 ◽

Vol 14 (5) ◽

pp. 2007-2011 ◽

Cited By ~ 2

Author(s):

M. L. Weaver ◽

L. P. M. Brandao ◽

H. Garmestani ◽

E. S. Gillman ◽

K. H. Dahmen ◽

...

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Giant Magnetoresistance ◽

Room Temperature ◽

Metalorganic Chemical Vapor Deposition ◽

Chemical Vapor ◽

X Ray Diffraction ◽

X Ray ◽

Metalorganic Chemical ◽

Liquid Delivery

Thin films of La0.6Ca0.4MnO3 (LCMO) have been produced on (001) oriented LaAlO3 (LAO) and yttrium-stabilized zirconia (YSZ) substrates by liquid-delivery metalorganic chemical vapor deposition (LD-MOCVD). X-ray diffraction (XRD) analyses showed that the films were epitaxially grown on LAO substrates and were monocrystalline at a thickness of less than 500 Å. At a thickness of greater than 500 Å, the films became polycrystalline but maintained their high texture (preferred crystalline orientation). Films grown on YSZ were always polycrystalline but were also highly oriented. Regardless of the substrate, the 1500 Å thick polycrystalline films exhibited substantially significant magnetoresistance ratios even above room temperature.

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Chemical vapor deposition of superconducting Bi-Sr-Ca-Cu-O films using fluorocarbon-based precursors

Journal of Materials Research ◽

10.1557/jmr.1990.0001 ◽

1990 ◽

Vol 5 (1) ◽

pp. 1-4 ◽

Cited By ~ 26

Author(s):

Masanori Nemoto ◽

Mitsugu Yamanaka

Keyword(s):

Thin Films ◽

Chemical Vapor Deposition ◽

Diffraction Data ◽

Vapor Deposition ◽

Substrate Surface ◽

Chemical Vapor ◽

X Ray Diffraction ◽

X Ray ◽

Resistivity Measurements ◽

First Time

Superconducting Bi-Sr-Ca-Cu-O thin films have been prepared for the first time by chemical vapor deposition using triphenyl bismuth and fluorocarbon-based chelates such as bis(hexafluoroacetylacetonate)strontium, bis(hexafluoroacetylacetonate)calcium, and bis(hexafluoroacetylacetonate)copper. After annealing in air, x-ray diffraction data reveal that the films deposited on (001) SrTiO3 substrates have preferential orientation of their crystalline c-axis perpendicular to the substrate surface. Four-probe resistivity measurements reveal the onset of superconductivity at 80 K and zero resistivity at 50 K.

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Deposition of Superconducting Tl-Ba-Ca-Cu-O Phases on Metal Foils by Metal-Organic Chemical Vapor Deposition

MRS Proceedings ◽

10.1557/proc-275-365 ◽

1992 ◽

Vol 275 ◽

Author(s):

D. L. Schulzi ◽

B. Hano ◽

D. Neumayer ◽

B. J. Hinds ◽

T. J. Markst ◽

...

Keyword(s):

Thin Films ◽

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Chemical Vapor ◽

Organic Chemical ◽

X Ray Diffraction ◽

X Ray ◽

Metal Foils ◽

Metal Organic ◽

Organic Chemical Vapor Deposition

ABSTRACTThe synthesis of superconducting Tl-Ba-Ca-Cu-O thin films on metal foils (Au and Ag) by metal-organic chemical vapor deposition (MOCVD) has been investigated. Ba-Ca-Cu-O-(F) films are first prepared via MOCVD using fluorinated “second generation” metal-organic precursors. After an intermediate anneal with water vapor-saturated oxygen to promote removal of F, Tl is introduced by annealing in the presence of a mixture of oxides (Tl2O3, BaO, CaO, CuO) of a specific composition. Characterization of the thin films by scanning electron microscopy, EDX, x-ray diffraction, and variable temperature magnetization measurements has been carried out. High temperature superconductor (HTS) films of Tl2Ba2Ca1Cu2O8−x on Au foil exhibit a magnetically derived Tc = 80K and a high degree of texturing with the crystallite c-axes oriented perpendicular to the substrate surface as evidenced by enhanced (000 x-ray diffraction reflections. Thin film coverage on Ag foil becomes non-contiguous during the (Tl2O3, BaO, CaO, CuO) mixture anneal.

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Photo-initiated chemical vapor deposition of thin films using syngas for the functionalization of surfaces at room temperature and near-atmospheric pressure

Surface and Coatings Technology ◽

10.1016/j.surfcoat.2014.01.043 ◽

2014 ◽

Vol 244 ◽

pp. 98-108 ◽

Cited By ~ 19

Author(s):

C.A. Dorval Dion ◽

W. Raphael ◽

E. Tong ◽

J.R. Tavares

Keyword(s):

Thin Films ◽

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Atmospheric Pressure ◽

Room Temperature ◽

Chemical Vapor ◽

Initiated Chemical Vapor Deposition

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Real-Time Composition And Thickness Control Techniques In A Metalorganic Chemical Vapor Deposition Process

MRS Proceedings ◽

10.1557/proc-406-133 ◽

1995 ◽

Vol 406 ◽

Author(s):

M. S. Gaffneyt ◽

C. M. Reavesl ◽

A. L Holmes ◽

R. S. Smith ◽

S. P. DenBaars

Keyword(s):

Chemical Vapor Deposition ◽

Real Time ◽

Vapor Deposition ◽

Metalorganic Chemical Vapor Deposition ◽

Chemical Vapor ◽

Normal Operation ◽

Growth Monitoring ◽

X Ray Diffraction ◽

X Ray ◽

Metalorganic Chemical

AbstractMetalorganic chemical vapor deposition (MOCVD) is a process used to manufacture electronic and optoelectronic devices that has traditionally lacked real-time growth monitoring and control. We have developed control strategies that incorporate monitors as real-time control sensors to improve MOCVD growth. An analog control system with an ultrasonic concentration monitor was used to reject bubbler concentration disturbances which exist under normal operation, during the growth of a four-period GaInAs/InP superlattice. Using X-ray diffraction, it was determined that the normally occurring concentration variations led to a wider GaInAs peak in the uncompensated growths as compared to the compensated growths, indicating that closed loop control improved GaInAs composition regulation. In further analysis of the X-ray diffraction curves, superlattice peaks were used as a measure of high crystalline quality. The compensated curve clearly displayed eight orders of satellite peaks, whereas the uncompensated curve shows little evidence of satellite peaks.

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Chemical Vapor Deposition of Strontium-Barium-Niobate

MRS Proceedings ◽

10.1557/proc-243-457 ◽

1991 ◽

Vol 243 ◽

Cited By ~ 6

Author(s):

A. Greenwald ◽

M. Horenstein ◽

M. Ruane ◽

W. Clouser ◽

J. Foresi

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Atmospheric Pressure ◽

Chemical Vapor ◽

X Ray Diffraction ◽

Strontium Barium Niobate ◽

Electrical And Optical Properties ◽

Strontium Barium ◽

X Ray ◽

Boston University

AbstractSpire Corporation has deposited strontium-barium-niobate by chemical vapor deposition at atmospheric pressure using Ba(TMHD), Sr(TMHD), and Nb ethoxide. Deposition temperature as 550°C in an isothermal furnace. Films were deposited upon silicon (precoated with silica), platinum, sapphire, and quartz. Materials were characterized by RBS, X-ray diffraction, EDS, electron, and optical microscopy. Electrical and optical properties were measured at Boston University.

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Growth of Epitaxial BaTiO3 Thin Films at 600°C by Metalorganic Chemical Vapor Deposition

MRS Proceedings ◽

10.1557/proc-361-355 ◽

1994 ◽

Vol 361 ◽

Cited By ~ 6

Author(s):

D.L. Kaiser ◽

M.D. Vaudin ◽

L.D. Rotter ◽

Z.L. Wang ◽

J.P. Cline ◽

...

Keyword(s):

Thin Films ◽

Chemical Vapor Deposition ◽

Electron Diffraction ◽

Harmonic Generation ◽

Vapor Deposition ◽

Metalorganic Chemical Vapor Deposition ◽

Second Harmonic ◽

Chemical Vapor ◽

X Ray ◽

Metalorganic Chemical

ABSTRACTMetalorganic chemical vapor deposition (MOCVD) was used to deposit epitaxial BaTiO3 thin films on (100) MgO substrates at 600°C. The metalorganic precursors employed in the deposition experiments were hydrated Ba(thd)2 (thd = C11H19O2) and titanium isopropoxide. The films were analyzed by means of transmittance spectroscopy, wavelength dispersive x-ray spectrometry, secondary ion mass spectrometry depth profiling, x-ray diffraction, high resolution transmission electron microscopy, selected area electron diffraction, nanoscale energy dispersive x-ray spectrometry and second harmonic generation measurements. There was no evidence for interdiffusion between the film and substrate. The x-ray and electron diffraction studies showed that the films were oriented with the a-axis normal to the substrate surface, whereas second harmonic generation measurements showed that the films had some c-axis character.

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