Preparation and characterization of epitaxial iron oxide films

1998 ◽  
Vol 13 (7) ◽  
pp. 2003-2014 ◽  
Author(s):  
Y. Gao ◽  
Y. J. Kim ◽  
S. A. Chambers
Keyword(s):  
Growth Rate ◽  
Iron Oxide ◽  
Oxygen Plasma ◽  
Film Surface ◽  
Surface Region ◽  
Growth Conditions ◽  
Epitaxial Films ◽  
Pure Phase ◽  
Iron Oxide Films

Well-ordered, pure-phase epitaxial films of FeO, Fe3O4, and γ–Fe2O3 were prepared on MgO(001) by oxygen-plasma-assisted MBE. The stoichiometries of these thin films were controlled by varying the growth rate and oxygen partial pressure. Selective growth of γ–Fe2O3 and α–Fe2O3 was achieved by controlling the growth conditions in conjunction with the choice of appropriate substrates. Growth of the iron oxide epitaxial films on MgO at ≥350 °C is accompanied by significant Mg outdiffusion. The FeO(001) film surface exhibits a (2 × 2) reconstruction, which is accompanied by a significant amount of Fe3+ in the surface region. Fe3O4 (001) has been found to reconstruct to a structure. γ–Fe23 (001) film surface is unreconstructed.

Characterization of iron oxide films prepared by laser irradiation in oxygen atmosphere

2009 ◽  
Vol 42 (18) ◽  
pp. 185305 ◽  
Author(s):  
Ratnesh Gupta ◽  
A Khandelwal ◽  
Ajay Gupta ◽  
Peter Schaaf
Keyword(s):  
Iron Oxide ◽  
Laser Irradiation ◽  
Oxide Films ◽  
Oxygen Atmosphere ◽  
Iron Oxide Films

Characterization of Thick 4H-SiC Hot-Wall CVD Layers

1999 ◽  
Vol 572 ◽  
Author(s):  
M. J. Paisley ◽  
K. G. Irvine ◽  
O. Kordina ◽  
R. Singh ◽  
J. W. Palmour ◽  
...  
Keyword(s):  
Growth Rate ◽  
Layer Thickness ◽  
Chemical Vapor ◽  
Growth Conditions ◽  
Device Development ◽  
Capacitance Voltage ◽  
Temperature And Growth ◽  
Increasing Temperature ◽  
Thick Layers

ABSTRACTEpitaxial 4H-SiC layers suitable for high power devices have been grown in a hot-wall chemical-vapor deposition (CVD) system. These layers were subsequently characterized for many parameters important in device development and production. The uniformity of both thickness and doping will be presented.Doping trends vs. temperature and growth rate will be shown for the p-type dopant used. The n-type dopant drops in concentration with increasing temperature or increasing growth rate. In contrast, the p-type dopant increases in concentration with decreasing temperature or increasing growth rate. A simple descriptive model for this behavior will be presented.The outcome from capacitance-voltage and SIMS measurements demonstrate that transitions from n to n−, or p to p−, and even n to p levels can be made quickly without adjustment to growth conditions. The ability to produce sharp transitions without process changes avoids degrading the resulting surface morphology or repeatability of the process. Avoiding process changes is particularly important in growth of thick layers since surface roughness tends to increase with layer thickness.Device results from diodes producing two different blocking voltages in excess of 5 kV will also be shown. The higher voltage diodes exhibited a breakdown behavior which was near the theoretical limit for the epitaxial layer thickness and doping level grown.

Characterization of r.f.-sputtered iron oxide films for modeling passive films

1998 ◽  
Vol 312 (1-2) ◽  
pp. 46-60 ◽  
Author(s):  
T. Stenberg ◽  
P. Vuoristo ◽  
J. Keränen ◽  
T. Mäntylä ◽  
M. Büchler ◽  
...  
Keyword(s):  
Iron Oxide ◽  
Oxide Films ◽  
Passive Films ◽  
Iron Oxide Films

Epitaxial Growth and Characterization of NbxTi1−xO2 Rutile Films by Oxygen-Plasma-Assisted Molecular Beam Epitaxy

1995 ◽  
Vol 401 ◽  
Author(s):  
Y. Gao ◽  
S. A. Chambers
Keyword(s):  
Molecular Beam Epitaxy ◽  
Photoelectron Spectroscopy ◽  
Oxygen Plasma ◽  
Molecular Beam ◽  
High Energy ◽  
Epitaxial Films ◽  
Layer By Layer ◽  
Force Microscopy ◽  
Atomic Force

AbstractEpitaxial films of NbxTi1−xO2 rutile were grown on TiO2 (110) and (100) at 600 °C by oxygen-plasma-assisted molecular beam epitaxy using elemental Ti and Nb sources. The epitaxial films were characterized by means of reflection high-energy and low-energy electron diffraction (RHEED/LEED), x-ray photoelectron spectroscopy and diffraction (XPS/XPD), ultraviolet photoemission spectroscopy (UPS) and atomic force microscopy (AFM). The epitaxial films grow in a layer-by-layer fashion and have excellent short- and long-range structure order at x≤0.3 on TiO2(110) and at x≤0.15 on TiO2(100). However, the epitaxial films become rough and disorder at higher doping levels. Nb substitutionally incorporates at cation lattice sites, leading to NbxTi1−xO2 solid solutions. In addition, the oxidation state of Nb in the NbxTi1−xO2 films has been determined to be +4.

Characterization of FeS2-pyrite thin films synthesized by sulphuration of amorphous iron oxide films pre-deposited by spray pyrolysis

2005 ◽  
Vol 54 (4-5) ◽  
pp. 431-437 ◽  
Author(s):  
B. Ouertani ◽  
J. Ouerfelli ◽  
M. Saadoun ◽  
B. Bessaïs ◽  
H. Ezzaouia ◽  
...  
Keyword(s):  
Thin Films ◽  
Iron Oxide ◽  
Spray Pyrolysis ◽  
Oxide Films ◽  
Amorphous Iron ◽  
Iron Oxide Films ◽  
Fes2 Pyrite

scholarly journals Optical Characterization of Ultra-Thin Iron and Iron Oxide Films

2009 ◽  
Vol 7 ◽  
pp. 486-490 ◽  
Author(s):  
David Necas ◽  
Lenka Zajícková ◽  
Daniel Franta ◽  
Pavel St'ahel ◽  
Petr Mikulík ◽  
...  
Keyword(s):  
Iron Oxide ◽  
Oxide Films ◽  
Optical Characterization ◽  
Iron Oxide Films

Preparation and characterization of ultra-thin iron oxide films on a Mo(100) surface

1995 ◽  
Vol 338 (1-3) ◽  
pp. 211-224 ◽  
Author(s):  
Jason S. Corneille ◽  
Jian-Wei He ◽  
D.Wayne Goodman
Keyword(s):  
Iron Oxide ◽  
Oxide Films ◽  
Iron Oxide Films

Detection of SiH3 radicals and cluster formation in a highly H2 diluted SiH4 VHF plasma by means of time resolved cavity ring down spectroscopy

2006 ◽  
Vol 910 ◽  
Author(s):  
Takehiko Nagai ◽  
Arno H. M. Smets ◽  
Michio Kondo
Keyword(s):  
Growth Rate ◽  
Cluster Formation ◽  
Film Surface ◽  
Growth Conditions ◽  
Time Resolved ◽  
Cavity Ringdown ◽  
Plasma Ignition ◽  
Diffusion Controlled ◽  
Kinetics Of ◽  
Main Growth

AbstractThe spatial distribution of the SiH3 radicals between the electrodes of a hydrogen diluted silane VHF plasma under thin film hydrogenated microcrystalline silicon (μc-Si:H) growth conditions has been measured using the time resolved cavity ringdown (τ-CRD) absorption spectroscopy technique. The μc-Si:H growth rate is estimated from the measured spatial SiH3 profiles using a simple model based upon diffusion controlled flux of SiH3 radicals to the electrode surface, where the SiH3 can react with the film surface. The calculated value of μc-Si:H growth rate roughly agrees with the value of the experimentally determined growth rate. This agreement implies that the SiH3 radical is the main growth contributor to the μc-Si:H growth. Furthermore, the τ-CRD reveals the growth kinetics of the clusters in the plasma by light scattering at these clusters on time scales of 1 s after the plasma ignition.

Characterization of high-quality epitaxial AlN films grown by MOVPE

2001 ◽  
Vol 693 ◽  
Author(s):  
Tomohiko Shibata ◽  
Keiichiro Asai ◽  
Teruyo Nagai ◽  
Shigeaki Sumiya ◽  
Mitsuhiro Tanaka ◽  
...  
Keyword(s):  
Surface Region ◽  
Epitaxial Films ◽  
High Quality ◽  
Edge Type ◽  
X Ray ◽  
Organic Vapor ◽  
Transmission Electron ◽  
Metal Organic ◽  
Almost All

AbstractThis paper presents the correlation between overall crystal mosaicities and dislocation behaviors of high-quality AlN epitaxial films grown on a C-plane sapphire substrate using a low-pressure metal organic vapor phase epitaxy (LP-MOVPE) method. Typical full width at half maximum (FWHM) values of x-ray rocking curves (XRC) for (0002) and (10-10) of the AlN are 80arcsec and 1800arcsec, respectively. From transmission electron microscopy (TEM) observations, edge-type dislocations thread the AlN layer, however, almost all screw-type dislocations disappear at an early AlN growth stage. The dislocation density of the AlN films in its surface region is as low as approximately 1x1010 cm-2. The distribution of the dislocations is considered to be caused by a large twisted mosaicity and a very small tilted mosaicity.

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