Study on preparation, growth mechanism, and optoelectronic properties of highly oriented WSe2 thin films

2000 ◽  
Vol 15 (12) ◽  
pp. 2636-2646 ◽  
Author(s):  
T. Tsirlina ◽  
V. Lyakhovitskaya ◽  
S. Fiechter ◽  
R. Tenne
Keyword(s):  
Thin Films ◽  
Thin Layer ◽  
Electronic Properties ◽  
Quantum Efficiency ◽  
Growth Mechanism ◽  
Growth Mode ◽  
Photoelectrochemical Cells ◽  
Precursor Film ◽  
Preparation Conditions ◽  
Photoresponse Spectrum

Recently, highly oriented WSe2 thin films, with the c axis of the crystallites perpendicular to the substrate, were reproducibly obtained by interposing a Ni/Cr thin layer between the substrate and a WO3 precursor film. In the present work the preparation conditions were varied to elucidate the growth mechanism of such films. A model for the growth mode is proposed. Based upon this analysis, WSe2 thin films with improved crystalline and electronic properties were obtained. The photoresponse spectrum for photoelectrochemical cells with the WSe2 electrode immersed into a selenosulfate solution was measured. Quantum efficiency of 0.1% was calculated from this spectrum.

UPS, XPS, AES STUDIES OF Te THIN FILMS DEPOSITED ON Si(100) 2×1

1994 ◽  
Vol 01 (04) ◽  
pp. 589-592 ◽  
Author(s):  
S. DI NARDO ◽  
L. LOZZI ◽  
M. PASSACANTANDO ◽  
P. PICOZZI ◽  
S. SANTUCCI
Keyword(s):  
Thin Films ◽  
Film Thickness ◽  
Electronic Properties ◽  
Valence Band ◽  
Room Temperature ◽  
Surface States ◽  
Growth Mode ◽  
Characteristic Behavior ◽  
Complete Study ◽  
Nominal Coverage

This work represents the first complete study of the interaction between Te and Si in very thin films of tellurium grown at room temperature on Si(100) 2×1 surfaces. In particular, the electronic properties have been investigated by UPS and XPS measurements and information on growth of tellurium on silicon have been obtained by AES measurements. Our results indicate that the interaction between tellurium and silicon is weak, taking the characteristic behavior of simple metals. Increasing the film thickness, the growth mode is one layer, completed with about 2 Å of Te nominal coverage, plus islanding, until the thickness reaches the value of about 10 Å, followed by coalescence of islands. When tellurium has completed a layer, the valence band surface states of silicon are quenched.

Chronoamperometry Study of the Electrodeposited Ni100-XPx Alloy Thin Films

2014 ◽  
Vol 605 ◽  
pp. 661-664
Author(s):  
Hadria Medouer ◽  
Chahira Benyekken ◽  
Saci Messaadi
Keyword(s):  
Thin Films ◽  
Chemical Properties ◽  
Growth Mode ◽  
Layer By Layer ◽  
Experimental Procedure ◽  
Cyclic Voltametry ◽  
Preparation Conditions ◽  
Electrode Cell ◽  
The Subject ◽  
Physical And Chemical

Elecrodeposited Ni-P alloy thin films have been the subject of extended investigations, since the pioneering works of Brenner et al, in the late 1940s. It is well known, that the physical and chemical properties of the Ni-P deposit composition are strongly influenced by the preparation conditions. In our experimental procedure, we have used a Parstat 2253 potensiostat equipped with Power-Suite software. All the electrochemical experiments were performed in a three electrode cell in which the volume of the bath was 150ml, in this experimental technique, we can measure one or more of three parameters: the potential (V), current (i), and time (t). The aim of our work consists to study the nucleation and growth process and given morphology and composition of electrodeposited Nix-P100-xthin films on Copper substrates. For this purpose, cyclic voltametry and chnonoamperomaty have been used in order to determine the previous cited properties of thin films Ni-P, [0.10 of NaPH2O2solutions. The chrnoamperogramms can be interpreted by the use of one of three models called: Growth mode (Me layer by layer formation); Franck Van der Merwe, FM model, Growth mode 3D (Me island formation on the top of predeposited), 2D Meads overlayers on substrat and Stranski-Krastanov; (SK model).

Electrochemically Grown Tin Oxide Thin Films:  In Situ Characterization of Electronic Properties and Growth Mechanism

2004 ◽  
Vol 108 (24) ◽  
pp. 8173-8181 ◽  
Author(s):  
Raül Díaz ◽  
Suzanne Joiret ◽  
Ángel Cuesta ◽  
Ismael Díez-Pérez ◽  
Philippe Allongue ◽  
...  
Keyword(s):  
Thin Films ◽  
Electronic Properties ◽  
Growth Mechanism ◽  
Tin Oxide ◽  
Oxide Thin Films ◽  
In Situ Characterization

Growth Mechanism of CBD-In(OH)[sub x]S[sub y] Thin Films

2002 ◽  
Vol 149 (1) ◽  
pp. C59 ◽  
Author(s):  
R. Bayón ◽  
M. Hernández-Mayoral ◽  
J. Herrero
Keyword(s):  
Thin Films ◽  
Growth Mechanism

scholarly journals Design of Promising Heptacoordinated Organotin (IV) Complexes-PEDOT: PSS-Based Composite for New-Generation Optoelectronic Devices Applications

Polymers ◽  
2021 ◽  
Vol 13 (7) ◽  
pp. 1023
Author(s):  
María Elena Sánchez-Vergara ◽  
Leon Hamui ◽  
Elizabeth Gómez ◽  
Guillermo M. Chans ◽  
José Miguel Galván-Hidalgo
Keyword(s):  
Thin Films ◽  
Electronic Properties ◽  
Optoelectronic Devices ◽  
Density Variation ◽  
Structural Modifications ◽  
Mixed Ligands ◽  
Vis Spectroscopy ◽  
Group A ◽  
Poly Styrene Sulfonate ◽  
New Generation

The synthesis of four mononuclear heptacoordinated organotin (IV) complexes of mixed ligands derived from tridentated Schiff bases and pyrazinecarboxylic acid is reported. This organotin (IV) complexes were prepared by using a multicomponent reaction, the reaction proceeds in moderate to good yields (64% to 82%). The complexes were characterized by UV-vis spectroscopy, IR spectroscopy, mass spectrometry, 1H, 13C, and 119Sn nuclear magnetic resonance (NMR) and elemental analysis. The spectroscopic analysis revealed that the tin atom is seven-coordinate in solution and that the carboxyl group acts as monodentate ligand. To determine the effect of the substituent on the optoelectronic properties of the organotin (IV) complexes, thin films were deposited, and the optical bandgap was obtained. A bandgap between 1.88 and 1.98 eV for the pellets and between 1.23 and 1.40 eV for the thin films was obtained. Later, different types of optoelectronic devices with architecture “contacts up/base down” were manufactured and analyzed to compare their electrical behavior. The design was intended to generate a composite based on the synthetized heptacoordinated organotin (IV) complexes embedded on the poly(3,4-ethylenedyoxithiophene)-poly(styrene sulfonate) (PEDOT:PSS). A Schottky curve at low voltages (<1.5 mV) and a current density variation of as much as ~3 × 10−5 A/cm2 at ~1.1 mV was observed. A generated photocurrent was of approximately 10−7 A and a photoconductivity between 4 × 10−9 and 7 × 10−9 S/cm for all the manufactured structures. The structural modifications on organotin (IV) complexes were focused on the electronic nature of the substituents and their ability to contribute to the electronic delocalization via the π system. The presence of the methyl group, a modest electron donor, or the non-substitution on the aromatic ring, has a reduced effect on the electronic properties of the molecule. However, a strong effect in the electronic properties of the material can be inferred from the presence of electron-withdrawing substituents like chlorine, able to reduce the gap energies.

Growth mechanism of Bi-2212 ribbon-like thin films

2001 ◽  
Vol 362 (1-4) ◽  
pp. 301-304 ◽  
Author(s):  
Shunichi Arisawa ◽  
Hanping Miao ◽  
Yoshihiko Takano ◽  
Yoshimasa Satoh ◽  
Akira Ishii ◽  
...  
Keyword(s):  
Thin Films ◽  
Growth Mechanism

scholarly journals Deep-Ultraviolet Transparent Conductive MWCNT/SiO2 Composite Thin Film Fabricated by UV Irradiation at Ambient Temperature onto Spin-Coated Molecular Precursor Film

Nanomaterials ◽  
2021 ◽  
Vol 11 (5) ◽  
pp. 1348
Author(s):  
Hiroki Nagai ◽  
Naoki Ogawa ◽  
Mitsunobu Sato
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Heat Treatment ◽  
Uv Irradiation ◽  
Composite Thin Film ◽  
Precursor Film ◽  
Mixed Solution ◽  
Pencil Hardness ◽  
Strong Base ◽  
Deep Ultraviolet

Deep-ultraviolet (DUV) light-transparent conductive composite thin films, consisting of dispersed multiwalled carbon nanotubes (MWCNTs) and SiO2 matrix composites, were fabricated on a quartz glass substrate. Transparent and well-adhered amorphous thin films, with a thickness of 220 nm, were obtained by weak ultraviolet (UV) irradiation (4 mW cm−2 at 254 nm) for more than 6 h at 20−40 °C onto the precursor films, which were obtained by spin coating with a mixed solution of MWCNT in water and Si(IV) complex in ethanol. The electrical resistivity of MWCNT/SiO2 composite thin film is 0.7 Ω·cm, and transmittance in the wavelength region from DUV to visible light is higher than 80%. The MWCNT/SiO2 composite thin film showed scratch resistance at pencil hardness of 8H. Importantly, the resistivity of the MWCNT/SiO2 composite thin film was maintained at the original level even after heat treatment at 500 °C for 1 h. It was observed that the heat treatment of the composite thin film improved durability against both aqueous solutions involving a strong acid (HCl) and a strong base (NaOH).

Influence of Ce-doping and preparation conditions on antiferromagnetism, superconductivity and electronic properties of Ln2-χCeχCuO4-δ (Ln=Nd, Sm)

1991 ◽  
Vol 169 (1-4) ◽  
pp. 695-696 ◽  
Author(s):  
J.P. Ströbel ◽  
M. Klauda ◽  
H. Weinfurther ◽  
J. Markl ◽  
M. Steiner ◽  
...  
Keyword(s):  
Electronic Properties ◽  
Preparation Conditions
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