UPS, XPS, AES STUDIES OF Te THIN FILMS DEPOSITED ON Si(100) 2×1

1994 ◽  
Vol 01 (04) ◽  
pp. 589-592 ◽  
Author(s):  
S. DI NARDO ◽  
L. LOZZI ◽  
M. PASSACANTANDO ◽  
P. PICOZZI ◽  
S. SANTUCCI
Keyword(s):  
Thin Films ◽  
Film Thickness ◽  
Electronic Properties ◽  
Valence Band ◽  
Room Temperature ◽  
Surface States ◽  
Growth Mode ◽  
Characteristic Behavior ◽  
Complete Study ◽  
Nominal Coverage

This work represents the first complete study of the interaction between Te and Si in very thin films of tellurium grown at room temperature on Si(100) 2×1 surfaces. In particular, the electronic properties have been investigated by UPS and XPS measurements and information on growth of tellurium on silicon have been obtained by AES measurements. Our results indicate that the interaction between tellurium and silicon is weak, taking the characteristic behavior of simple metals. Increasing the film thickness, the growth mode is one layer, completed with about 2 Å of Te nominal coverage, plus islanding, until the thickness reaches the value of about 10 Å, followed by coalescence of islands. When tellurium has completed a layer, the valence band surface states of silicon are quenched.

scholarly journals Tuning electronic properties in LaNiO3 thin films by B-site Cu-substitution

2020 ◽  
Vol 8 (36) ◽  
pp. 12662-12668
Author(s):  
Henrik H. Sønsteby ◽  
Erik Skaar ◽  
Jon E. Bratvold ◽  
John W. Freeland ◽  
Angel Yanguas-Gil ◽  
...  
Keyword(s):  
Thin Films ◽  
Atomic Layer Deposition ◽  
Electronic Properties ◽  
Room Temperature ◽  
Atomic Layer ◽  
Transition Temperatures ◽  
Metal Insulator Transition ◽  
Metal Insulator ◽  
Cu Substitution ◽  
Layer Deposition

Cu-Substitution in LaNiO3 by atomic layer deposition provides films spanning six orders of magnitude in resistivity, with metal insulator transition temperatures from 0 K to room temperature.

Growth Front Roughening of Room Temperature Deposited Oligomer Thin Films

2000 ◽  
Vol 648 ◽  
Author(s):  
D. Tsamouras ◽  
G. Palasantzas ◽  
J. Th. M. De Hosson ◽  
G. Hadziioannou
Keyword(s):  
Thin Films ◽  
Film Thickness ◽  
Room Temperature ◽  
Growth Front ◽  
Silicon Substrates ◽  
Height Distribution ◽  
Force Microscopy ◽  
Atomic Force ◽  
Roughness Amplitude ◽  
Non Gaussian

AbstractGrowth front scaling aspects are investigated for PPV-type oligomer thin films vapor- deposited onto silicon substrates at room temperature. For film thickness d~15-300 nm, commonly used in optoelectronic devices, correlation function measurement by atomic force microscopy yields roughness exponents in the range H=0.45±0.04, and an rms roughness amplitude which evolves with film thickness as a power law σ∝ dβ with β=0.28±0.05. The non-Gaussian height distribution and the measured scaling exponents (H and β) suggest a roughening mechanism close to that described by the Kardar-Parisi-Zhang scenario.

Structural Properties of PbI2 Thin Film

2014 ◽  
Vol 879 ◽  
pp. 175-179 ◽  
Author(s):  
Safaa I. Mohammed ◽  
Naser Mahmoud Ahmed ◽  
Y. Al-Douri ◽  
U. Hashim
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Structural Analysis ◽  
Film Thickness ◽  
Room Temperature ◽  
Annealing Temperature ◽  
Thermal Evaporation ◽  
Lead Iodide ◽  
Thermal Evaporation Method ◽  
Growth Orientation

Lead iodide (PbI2) thin films were successfully prepared by thermal evaporation method on a glass substrate at room temperature. The structural analysis of these films was done by XRD. The results revealed that the crystallite size increases when increasing the film thickness and annealing temperature. In addition, the preferred growth orientation was 001 for all the samples.

scholarly journals Thickness dependent magnetic transitions in pristine MgO and ZnO sputtered thin films

2010 ◽  
Vol 4 (3) ◽  
pp. 225-229 ◽  
Author(s):  
Mukes Kapilashrami ◽  
Xu Jun ◽  
K.V. Rao ◽  
Lyubov Belova
Keyword(s):  
Thin Films ◽  
Film Thickness ◽  
Room Temperature ◽  
Room Temperature Ferromagnetism ◽  
Finite Thickness ◽  
Reactive Magnetron ◽  
Magnetic Characterization ◽  
Ferromagnetic Order ◽  
Functional Aspects ◽  
Paramagnetic Behaviour

We report a systematic study of the thickness dependency of room temperature ferromagnetism in pristine MgO (~100-500 nm) and ZnO (~100-1000 nm) thin films deposited by reactive magnetron sputtering technique under the respective identical controlled optimum oxygen ambience. As far as we know this is the first such report on ferromagnetic pure MgO thin films, a result which should be of significance in understanding the functional aspects of magnetic tunnelling characteristics in devices using MgO dielectrics. From the magnetic characterization we observe a distinct variation in the saturation magnetization (MS) with increasing film thickness. In the case of MgO thin films MS values vary in the range 0.04-1.58 emu/g (i.e. 0.0012-0.046 ?B/unit cell) with increasing film thickness showing the highest MS value for the 170 nm thick film. Above this thickness MS is found to decrease and eventually above 420 nm the films show a paramagnetic behaviour followed by the well known diamagnetic property for the bulk (>500 nm). It is obvious that since initially the MS values increase with thickness, there has to be a maximum before the films become diamagnetic at some finite thickness. We also note that the MS values observed for MgO are the highest (more than twice the value observed for ZnO) to be reported for such a defect induced ferromagnetism in a pristine oxide. The origin of ferromagnetic order in both the oxides appears to arise from the respective cat-ion vacancies. The discovery of film thickness dependent ferromagnetic order should be very useful in developing multifunctional devices based on the technologically important materials MgO and ZnO.

Heteroepitaxial Growth of Epitaxial C60-Thin Films on Mica(001)

1994 ◽  
Vol 359 ◽  
Author(s):  
S. Henke ◽  
K.H. Thürer ◽  
S. Geier ◽  
B. Rauschenbach ◽  
B. Stritzker
Keyword(s):  
Thin Films ◽  
Film Thickness ◽  
Substrate Temperature ◽  
Room Temperature ◽  
Heteroepitaxial Growth ◽  
X Ray Diffraction ◽  
X Ray ◽  
Force Microscopy ◽  
Atomic Force ◽  
Substrate Temperatures

ABSTRACTOn mica(001) thin C60-films are deposited by thermal evaporation at substrate temperatures from room temperature up to 225°C. The dependence of the structure and the epitaxial alignment of the thin C60-films on mica(001) on the substrate temperature and the film thickness up to 1.3 μm at a well-defined deposition rate (0.008 nm/s) is investigated by atomic force microscopy and X-ray diffraction. The shape and the size of the C60-islands, which have an influence on the film quality at larger film thicknesses, are sensitively dependent on the substrate temperature. At a film thickness of 200 nm the increase of the substrate temperature up to 225°C leads to smooth, completely coalesced epitaxial C60-thin films characterized by a roughness smaller than 1.5 nm, a mosaic spread Δω of 0.1° and an azimuthal alignment ΔΦ of 0.45°.

scholarly journals Thermal Conductivity of Cubic and Hexagonal Mesoporous Silica Thin Films

2009 ◽  
Author(s):  
Thomas Coquil ◽  
Neal Hutchinson ◽  
Laurent Pilon ◽  
Erik Richman ◽  
Sarah Tolbert
Keyword(s):  
Thin Films ◽  
Thermal Conductivity ◽  
Mesoporous Silica ◽  
Film Thickness ◽  
Wall Thickness ◽  
Room Temperature ◽  
Strong Dependence ◽  
Fused Silica ◽  
Silica Thin Films ◽  
The Cross

This paper reports the cross-plane thermal conductivity of highly ordered cubic and hexagonal templated mesoporous amorphous silica thin films synthesized by evaporation-induced self-assembly process. Cubic and hexagonal films featured spherical and cylindrical pores and average porosity of 25% and 45%, respectively. The pore diameter ranged from 3 to 18 nm and film thickness from 80 to 540 nm while the average wall thickness varied from 3 to 12 nm. The thermal conductivity was measured at room temperature using the 3ω method. The experimental setup and the associated analysis were validated by comparing the thermal conductivity measurements with data reported in the literature for the silicon substrate and for high quality thermal oxide thin films with thickness ranging from 100 to 500 nm. The cross-plane thermal conductivity of the synthesized mesoporous silica thin films does not show strong dependence on pore size, wall thickness, or film thickness. This is due to the fact that heat is mainly carried by very localized non propagating vibrational modes. The average thermal conductivity for the cubic mesoporous silica films was 0.30 ± 0.02 W/mK, while it was 0.20 ± 0.01 W/mK for the hexagonal films. This corresponds to a reduction of 79% and 86% from bulk fused silica at room temperature.

Study on preparation, growth mechanism, and optoelectronic properties of highly oriented WSe2 thin films

2000 ◽  
Vol 15 (12) ◽  
pp. 2636-2646 ◽  
Author(s):  
T. Tsirlina ◽  
V. Lyakhovitskaya ◽  
S. Fiechter ◽  
R. Tenne
Keyword(s):  
Thin Films ◽  
Thin Layer ◽  
Electronic Properties ◽  
Quantum Efficiency ◽  
Growth Mechanism ◽  
Growth Mode ◽  
Photoelectrochemical Cells ◽  
Precursor Film ◽  
Preparation Conditions ◽  
Photoresponse Spectrum

Recently, highly oriented WSe2 thin films, with the c axis of the crystallites perpendicular to the substrate, were reproducibly obtained by interposing a Ni/Cr thin layer between the substrate and a WO3 precursor film. In the present work the preparation conditions were varied to elucidate the growth mechanism of such films. A model for the growth mode is proposed. Based upon this analysis, WSe2 thin films with improved crystalline and electronic properties were obtained. The photoresponse spectrum for photoelectrochemical cells with the WSe2 electrode immersed into a selenosulfate solution was measured. Quantum efficiency of 0.1% was calculated from this spectrum.

Thermoelectric Properties of PbSe Epitaxial Thin Films and PbSe/EuS Heterostructures

2001 ◽  
Vol 691 ◽  
Author(s):  
Mildred S. Dresselhaus ◽  
Gene Dresselhaus ◽  
Elena I. Rogacheva ◽  
Tatyana V. Tavrina ◽  
Sergey N. Grigorov ◽  
...  
Keyword(s):  
Thin Films ◽  
Film Thickness ◽  
Thermoelectric Properties ◽  
Room Temperature ◽  
Thick Films ◽  
Sharp Change ◽  
Epitaxial Thin Films ◽  
Layer Model ◽  
Qualitative Interpretation ◽  
Two Layer Model

ABSTRACTSystematic investigations were performed of the thickness dependences of the thermoelectric properties of PbSe thin films, freshly prepared and exposed to air at room temperature. It is shown that oxidation leads to a sharp change in the thermoelectric properties of the PbSe films including a change in the sign of the dominant carrier type from n-type to p- type at d ≤ 80 nm. Using a two carrier model for thin films (d < 50 nm) and a two-layer model for thick films (d > 50 nm) allows us to give a satisfactory qualitative interpretation of the observed experimental dependences of the thermoelectric properties on the film thickness.

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