Metalorganic chemical vapor deposition of titanium oxide for microelectronics applications

2001 ◽  
Vol 16 (6) ◽  
pp. 1838-1849 ◽  
Author(s):  
Kanchana Vydianathan ◽  
Guillermo Nuesca ◽  
Gregory Peterson ◽  
Eric T. Eisenbraun ◽  
Alain E. Kaloyeros ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Photoelectron Spectroscopy ◽  
Rutherford Backscattering Spectrometry ◽  
Ion Beam ◽  
Chemical Vapor ◽  
Deposition Process ◽  
Oxide Semiconductor ◽  
X Ray ◽  
Control Film

A chemical vapor deposition process has been developed for titanium dioxide (TiOx) for applications as capacitor dielectric in sub-quarter-micron dynamic random-access memory devices, and as gate insulators in emerging generations of etal-oxide-semiconductor transistors. Studies using the β-diketonate source precursor (2,2,6,6-tetramethyl-3,5-heptanedionato) titanium were carried out to examine the underlying mechanisms that control film nucleation and growth kinetics and to establish the effects of key process parameters on film purity, composition, texture, morphology, and electrical properties. Resulting film properties were thoroughly analyzed by x-ray diffraction, x-ray photoelectron spectroscopy, Rutherford backscattering spectrometry, scanning electron microscopy (SEM), focused-ion-beam SEM, and capacitance–voltage (C–V) measurements. The study resulted in the identification of an optimized process for the deposition of an anatase–rutile TiOx film with a dielectric constant approximately 85 at 1 MHz for a 330-nm thickness, and a leakage current below 2 × 10−8 A/cm2 for bias voltage values up to 3.5 V.

Chemical Vapor Deposition of Ru and RuO2 for Gate Electrode Applications

2002 ◽  
Vol 716 ◽  
Author(s):  
Filippos Papadatos ◽  
Spyridon Skordas ◽  
Zubin Patel ◽  
Steven Consiglio ◽  
Eric Eisenbraun
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Photoelectron Spectroscopy ◽  
Rutherford Backscattering Spectrometry ◽  
Chemical Vapor ◽  
Gate Electrode ◽  
Cross Sectional ◽  
X Ray ◽  
Potential Applications ◽  
Reactive Gases

AbstractIn this work, Ru and RuO2 films have been investigated for potential applications in emerging CMOS gate electrode and memory capacitor bottom electrode applications. Films were deposited on SiO2 using chemical vapor deposition (CVD) and low power plasma assisted CVD (PACVD) in a 200-mm wafer deposition cluster tool using a metal beta-diketonate precursor [Bis (2,2,6,6-tetramethyl-3,5-heptanedionato) (1,5-cyclooctadiene) ruthenium (II)]. Hydrogen and oxygen were employed as the reactive gases to deposit, respectively, Ru and RuO2, over a wafer temperature range from 320°C to 480°C. The resulting film properties were analyzed using cross-sectional scanning electron microscopy (CS-SEM), four point resistance probe, x-ray photoelectron spectroscopy (XPS), Rutherford backscattering spectrometry (RBS) and x-ray diffraction (XRD). Both Ru and RuO2 films could be deposited with minimal carbon concentration (∼5 at. %). The purity of the films was also reflected in the as-deposited resistivity of the films, which was as low as 47 μΩ-cm, and was strongly dependent on processing conditions. In order to assess thermal stability, the films were subsequently annealed in forming gas and oxygen ambients for 60 min at 650°C. It was observed that, generally speaking, CVD RuO2 films were stable, with respect to resistivity, in oxidizing ambients, while annealing in a reducing ambient resulted in significant film densification and reduction of the film resistivities to as low as 43 μΩ-cm. Ru films demonstrated good adhesion after anneals in oxidizing, but not in reducing ambients.

scholarly journals Low-energy Ar+ and N+ ion beam induced chemical vapor deposition using hexamethyldisilazane for the formation of nitrogen containing SiC and carbon containing SiN films

PLoS ONE ◽  
2021 ◽  
Vol 16 (10) ◽  
pp. e0259216
Author(s):  
Satoru Yoshimura ◽  
Satoshi Sugimoto ◽  
Takae Takeuchi ◽  
Kensuke Murai ◽  
Masato Kiuchi
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Photoelectron Spectroscopy ◽  
Ion Beam ◽  
Chemical Vapor ◽  
Film Deposition ◽  
Experimental Methodology ◽  
Si Substrate ◽  
X Ray ◽  
Silicon Nitride Films

We proposed an experimental methodology for producing films on substrates with an ion beam induced chemical vapor deposition (IBICVD) method using hexamethyldisilazane (HMDS) as a source material. In this study, both HMDS and ion beam were simultaneously injected onto a Si substrate. We selected Ar+ and N+ as the ion beam. The energy of the ion beam was 101 eV. Temperature of the Si substrate was set at 540 °C. After the experiments, films were found to be deposited on the substrates. The films were then analyzed by Fourier transform infrared (FTIR) spectroscopy, stylus profilometer, X-ray diffraction, atomic force microscopy, and X-ray photoelectron spectroscopy (XPS). The FTIR and XPS results showed that silicon carbide films containing small amount of nitrogen were formed when Ar+ ions were injected in conjunction with HMDS. On the other hand, in the cases of N+ ion beam irradiation, silicon nitride films involving small amount of carbon were formed. It was noted that no film deposition was observed when HMDS alone was supplied to the substrates without any ion beam injections.

Chemical Vapor Deposition of ZnS:Mn for Thin-Film Electroluminescent Display Applications

2004 ◽  
Vol 19 (3) ◽  
pp. 697-706 ◽  
Author(s):  
Anna W. Topol ◽  
Kathleen A. Dunn ◽  
Karl W. Barth ◽  
Guillermo M. Nuesca ◽  
Brian K. Taylor ◽  
...  
Keyword(s):  
Thin Film ◽  
Electron Microscopy ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Photoelectron Spectroscopy ◽  
Rutherford Backscattering Spectrometry ◽  
Chemical Vapor ◽  
Nuclear Reaction Analysis ◽  
Process Window ◽  
X Ray

Results are presented from a systematic investigation to design and optimize a low-pressure chemical vapor deposition (CVD) process for manganese-doped zinc sulfide (ZnS:Mn) thin films for electroluminescent (EL) device applications. The CVD process used diethylzinc (DEZ), di-π-cyclopentadienyl manganese (CPMn), and hydrogen sulfide (H2S) as co-reactants and hydrogen (H2) as carrier gas. A design of experiments approach was used to derive functionality curves for the dependence of ZnS:Mn film properties on substrate temperature and flow rates (partial pressures) of DEZ, CPMn, H2S, and H2. Film physical, chemical, structural, and optical properties were examined using Rutherford backscattering spectrometry, dynamic secondary ion mass spectroscopy, x-ray photoelectron spectroscopy, nuclear-reaction analysis, x-ray diffraction, transmission electron microscopy, atomic force microscopy, and scanning electron microscopy. EL measurements were carried out on ZnS:Mn-based dielectric–sulfur–dielectric stacks incorporated into alternating-current thin-film electroluminescent devices. An optimized process window was established for the formation of films with predominantly (0 0 2) orientation, grain size larger than 0.2 μm, and Mn dopant level approximately 0.5 at.%. A brightness of 407 cd/m2 (119 fL) and efficiency of 1.6 lm/W were obtained, as measured at 40 V above threshold voltage and 60 Hz frequency.

Synthesizing Nanocrystalline Carbon Thin Films by Hot Filament Chemical Vapor Deposition and Controlling Their Microstructure

2002 ◽  
Vol 17 (7) ◽  
pp. 1820-1833 ◽  
Author(s):  
S. Gupta ◽  
B. R. Weiner ◽  
G. Morell
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Photoelectron Spectroscopy ◽  
Noble Gas ◽  
Ion Beam ◽  
Chemical Vapor ◽  
X Ray ◽  
Hot Filament ◽  
Methane Concentrations

Nanocrystalline carbon (n-C) thin films were deposited on Mo substrates using methane (CH4) and hydrogen (H2) by the hot-filament chemical vapor deposition (HFCVD) technique. Process parameters relevant to the secondary nucleation rate were systematically varied (0.3–2.0% methane concentrations, 700–900 °C deposition temperatures, and continuous forward and reverse bias during growth) to study the corresponding variations in film microstructure. Standard nondestructive complementary characterization tools such as scanning electron microscopy, x-ray diffraction, atomic force microscopy, Raman spectroscopy, and x-ray photoelectron spectroscopy were utilized to obtain a coherent and comprehensive picture of the microstructure of these films. Through these studies we obtained an integral picture of the material grown and learned how to control key material properties such as surface morphology (faceted versus evenly smooth), grain size (microcrystalline versus nanocrystalline), surface roughness (from rough 150 rms to smooth 70 rms), and bonding configuration (sp3 C versus sp2 C), which result in physical properties relevant for several technological applications. These findings also indicate that there exist fundamental differences between HFCVD and microwave CVD (MWCVD) for methane concentrations above 1%, whereas some similarities are drawn among films grown by ion-beam assisted deposition, HFCVD assisted by low-energy particle bombardment, and MWCVD using noble gas in replacement of traditionally used hydrogen.

scholarly journals Tantalum diffusion barrier grown by inorganic plasma-promoted chemical vapor deposition: Performance in copper metallization

2000 ◽  
Vol 15 (12) ◽  
pp. 2800-2810 ◽  
Author(s):  
Alain E. Kaloyeros ◽  
Xiomeng Chen ◽  
Sarah Lane ◽  
Harry L. Frisch ◽  
Barry Arkles
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Photoelectron Spectroscopy ◽  
Rutherford Backscattering Spectrometry ◽  
Chemical Vapor ◽  
Diffusion Barriers ◽  
Copper Metallization ◽  
X Ray ◽  
Force Microscopy ◽  
Tantalum Films

As-deposited and annealed tantalum films, grown by plasma-promoted chemical vapor deposition (PPCVD) using pentabromotantalum and hydrogen as coreactants, were evaluated as diffusion barriers in copper metallization. Stacks consisting of 500-nm-thick sputtered Cu/55-nm-thick untreated PPCVD Ta/Si were annealed in argon in the range 450 to 650 °C, in 50 °C intervals, along with sputtered Cu/preannealed PPCVD Ta/Si and sputtered Cu/sputtered Ta/Si stacks of identical thickness. Pre- and postannealed stacks were characterized by x-ray photoelectron spectroscopy, Auger electron spectroscopy, Rutherford backscattering spectrometry, hydrogen profiling, x-ray diffraction, atomic force microscopy, sheet resistance measurements, and Secco chemical treatment and etch-pit observation by scanning electron microscopy. The sputtered and preannealed PPCVD Ta films acted as viable diffusion barriers up to 550 °C, while the as-deposited PPCVD Ta films failed above 500 °C. In all cases, breakdown occurred through the migration of Cu into Si, rather than an interfacial reaction between Ta and Si, in agreement with previously reported results for sputtered Ta films. The accelerated barrier failure for as-deposited PPCVD Ta might have been caused by the presence of approximately 20 at.% hydrogen in the as-deposited PPCVD Ta, an observation which was supported by the enhanced performance of the same PPCVD Ta films after annealing-induced hydrogen removal.

High Quality GaAs Mis Diodes With Very Low Surface State Density

1990 ◽  
Vol 209 ◽  
Author(s):  
Yoshihisa Fujisaki ◽  
Sumiko Sakai ◽  
Saburo Ataka ◽  
Kenji Shibata
Keyword(s):  
Chemical Vapor Deposition ◽  
Density Of States ◽  
Vapor Deposition ◽  
Photoelectron Spectroscopy ◽  
Chemical Vapor ◽  
State Density ◽  
High Quality ◽  
Metal Insulator ◽  
X Ray ◽  
Mis Devices

ABSTRACTHigh quality GaAs/SiO2 MIS( Metal Insulator Semiconductor ) diodes were fabricated using (NH4)2S treatment and photo-assisted CVD( Chemical Vapor Deposition ). The density of states at the GaAs and SiO2 interface is the order of 1011 cm-2eV-1 throughout the forbidden energy range, which is smaller by the order of two than that of the MIS devices made by the conventional CVD process. The mechanism attributable to the interface improvement was investigated through XPS( X-ray Photoelectron Spectroscopy ) analyses.

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