scholarly journals Tantalum diffusion barrier grown by inorganic plasma-promoted chemical vapor deposition: Performance in copper metallization

2000 ◽  
Vol 15 (12) ◽  
pp. 2800-2810 ◽  
Author(s):  
Alain E. Kaloyeros ◽  
Xiomeng Chen ◽  
Sarah Lane ◽  
Harry L. Frisch ◽  
Barry Arkles
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Photoelectron Spectroscopy ◽  
Rutherford Backscattering Spectrometry ◽  
Chemical Vapor ◽  
Diffusion Barriers ◽  
Copper Metallization ◽  
X Ray ◽  
Force Microscopy ◽  
Tantalum Films

As-deposited and annealed tantalum films, grown by plasma-promoted chemical vapor deposition (PPCVD) using pentabromotantalum and hydrogen as coreactants, were evaluated as diffusion barriers in copper metallization. Stacks consisting of 500-nm-thick sputtered Cu/55-nm-thick untreated PPCVD Ta/Si were annealed in argon in the range 450 to 650 °C, in 50 °C intervals, along with sputtered Cu/preannealed PPCVD Ta/Si and sputtered Cu/sputtered Ta/Si stacks of identical thickness. Pre- and postannealed stacks were characterized by x-ray photoelectron spectroscopy, Auger electron spectroscopy, Rutherford backscattering spectrometry, hydrogen profiling, x-ray diffraction, atomic force microscopy, sheet resistance measurements, and Secco chemical treatment and etch-pit observation by scanning electron microscopy. The sputtered and preannealed PPCVD Ta films acted as viable diffusion barriers up to 550 °C, while the as-deposited PPCVD Ta films failed above 500 °C. In all cases, breakdown occurred through the migration of Cu into Si, rather than an interfacial reaction between Ta and Si, in agreement with previously reported results for sputtered Ta films. The accelerated barrier failure for as-deposited PPCVD Ta might have been caused by the presence of approximately 20 at.% hydrogen in the as-deposited PPCVD Ta, an observation which was supported by the enhanced performance of the same PPCVD Ta films after annealing-induced hydrogen removal.

Chemical Vapor Deposition of Ru and RuO2 for Gate Electrode Applications

2002 ◽  
Vol 716 ◽  
Author(s):  
Filippos Papadatos ◽  
Spyridon Skordas ◽  
Zubin Patel ◽  
Steven Consiglio ◽  
Eric Eisenbraun
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Photoelectron Spectroscopy ◽  
Rutherford Backscattering Spectrometry ◽  
Chemical Vapor ◽  
Gate Electrode ◽  
Cross Sectional ◽  
X Ray ◽  
Potential Applications ◽  
Reactive Gases

AbstractIn this work, Ru and RuO2 films have been investigated for potential applications in emerging CMOS gate electrode and memory capacitor bottom electrode applications. Films were deposited on SiO2 using chemical vapor deposition (CVD) and low power plasma assisted CVD (PACVD) in a 200-mm wafer deposition cluster tool using a metal beta-diketonate precursor [Bis (2,2,6,6-tetramethyl-3,5-heptanedionato) (1,5-cyclooctadiene) ruthenium (II)]. Hydrogen and oxygen were employed as the reactive gases to deposit, respectively, Ru and RuO2, over a wafer temperature range from 320°C to 480°C. The resulting film properties were analyzed using cross-sectional scanning electron microscopy (CS-SEM), four point resistance probe, x-ray photoelectron spectroscopy (XPS), Rutherford backscattering spectrometry (RBS) and x-ray diffraction (XRD). Both Ru and RuO2 films could be deposited with minimal carbon concentration (∼5 at. %). The purity of the films was also reflected in the as-deposited resistivity of the films, which was as low as 47 μΩ-cm, and was strongly dependent on processing conditions. In order to assess thermal stability, the films were subsequently annealed in forming gas and oxygen ambients for 60 min at 650°C. It was observed that, generally speaking, CVD RuO2 films were stable, with respect to resistivity, in oxidizing ambients, while annealing in a reducing ambient resulted in significant film densification and reduction of the film resistivities to as low as 43 μΩ-cm. Ru films demonstrated good adhesion after anneals in oxidizing, but not in reducing ambients.

Chemical Vapor Deposition of ZnS:Mn for Thin-Film Electroluminescent Display Applications

2004 ◽  
Vol 19 (3) ◽  
pp. 697-706 ◽  
Author(s):  
Anna W. Topol ◽  
Kathleen A. Dunn ◽  
Karl W. Barth ◽  
Guillermo M. Nuesca ◽  
Brian K. Taylor ◽  
...  
Keyword(s):  
Thin Film ◽  
Electron Microscopy ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Photoelectron Spectroscopy ◽  
Rutherford Backscattering Spectrometry ◽  
Chemical Vapor ◽  
Nuclear Reaction Analysis ◽  
Process Window ◽  
X Ray

Results are presented from a systematic investigation to design and optimize a low-pressure chemical vapor deposition (CVD) process for manganese-doped zinc sulfide (ZnS:Mn) thin films for electroluminescent (EL) device applications. The CVD process used diethylzinc (DEZ), di-π-cyclopentadienyl manganese (CPMn), and hydrogen sulfide (H2S) as co-reactants and hydrogen (H2) as carrier gas. A design of experiments approach was used to derive functionality curves for the dependence of ZnS:Mn film properties on substrate temperature and flow rates (partial pressures) of DEZ, CPMn, H2S, and H2. Film physical, chemical, structural, and optical properties were examined using Rutherford backscattering spectrometry, dynamic secondary ion mass spectroscopy, x-ray photoelectron spectroscopy, nuclear-reaction analysis, x-ray diffraction, transmission electron microscopy, atomic force microscopy, and scanning electron microscopy. EL measurements were carried out on ZnS:Mn-based dielectric–sulfur–dielectric stacks incorporated into alternating-current thin-film electroluminescent devices. An optimized process window was established for the formation of films with predominantly (0 0 2) orientation, grain size larger than 0.2 μm, and Mn dopant level approximately 0.5 at.%. A brightness of 407 cd/m2 (119 fL) and efficiency of 1.6 lm/W were obtained, as measured at 40 V above threshold voltage and 60 Hz frequency.

Metalorganic chemical vapor deposition of titanium oxide for microelectronics applications

2001 ◽  
Vol 16 (6) ◽  
pp. 1838-1849 ◽  
Author(s):  
Kanchana Vydianathan ◽  
Guillermo Nuesca ◽  
Gregory Peterson ◽  
Eric T. Eisenbraun ◽  
Alain E. Kaloyeros ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Photoelectron Spectroscopy ◽  
Rutherford Backscattering Spectrometry ◽  
Ion Beam ◽  
Chemical Vapor ◽  
Deposition Process ◽  
Oxide Semiconductor ◽  
X Ray ◽  
Control Film

A chemical vapor deposition process has been developed for titanium dioxide (TiOx) for applications as capacitor dielectric in sub-quarter-micron dynamic random-access memory devices, and as gate insulators in emerging generations of etal-oxide-semiconductor transistors. Studies using the β-diketonate source precursor (2,2,6,6-tetramethyl-3,5-heptanedionato) titanium were carried out to examine the underlying mechanisms that control film nucleation and growth kinetics and to establish the effects of key process parameters on film purity, composition, texture, morphology, and electrical properties. Resulting film properties were thoroughly analyzed by x-ray diffraction, x-ray photoelectron spectroscopy, Rutherford backscattering spectrometry, scanning electron microscopy (SEM), focused-ion-beam SEM, and capacitance–voltage (C–V) measurements. The study resulted in the identification of an optimized process for the deposition of an anatase–rutile TiOx film with a dielectric constant approximately 85 at 1 MHz for a 330-nm thickness, and a leakage current below 2 × 10−8 A/cm2 for bias voltage values up to 3.5 V.

High Quality GaAs Mis Diodes With Very Low Surface State Density

1990 ◽  
Vol 209 ◽  
Author(s):  
Yoshihisa Fujisaki ◽  
Sumiko Sakai ◽  
Saburo Ataka ◽  
Kenji Shibata
Keyword(s):  
Chemical Vapor Deposition ◽  
Density Of States ◽  
Vapor Deposition ◽  
Photoelectron Spectroscopy ◽  
Chemical Vapor ◽  
State Density ◽  
High Quality ◽  
Metal Insulator ◽  
X Ray ◽  
Mis Devices

ABSTRACTHigh quality GaAs/SiO2 MIS( Metal Insulator Semiconductor ) diodes were fabricated using (NH4)2S treatment and photo-assisted CVD( Chemical Vapor Deposition ). The density of states at the GaAs and SiO2 interface is the order of 1011 cm-2eV-1 throughout the forbidden energy range, which is smaller by the order of two than that of the MIS devices made by the conventional CVD process. The mechanism attributable to the interface improvement was investigated through XPS( X-ray Photoelectron Spectroscopy ) analyses.

Low Temperature Nitridatio of SiO2 Films using a Catalytic-CVD System

2000 ◽  
Vol 611 ◽  
Author(s):  
Akira Izumi ◽  
Hidekazu Sato ◽  
Hideki Matsumura
Keyword(s):  
Chemical Vapor Deposition ◽  
Low Temperature ◽  
Silicon Dioxide ◽  
Vapor Deposition ◽  
Photoelectron Spectroscopy ◽  
Chemical Vapor ◽  
Catalytic Decomposition ◽  
Catalytic Chemical Vapor Deposition ◽  
Sio2 Films ◽  
X Ray

ABSTRACTThis paper reports a procedure for low-temperature nitridation of silicon dioxide (SiO2) surfaces using species produced by catalytic decomposition of NH3 on heated tungsten in catalytic chemical vapor deposition (Cat-CVD) system. The surface of SiO2/Si(100) was nitrided at temperatures as low as 200°C. X-ray photoelectron spectroscopy measurements revealed that incorporated N atoms are bound to Si atoms and O atoms and located top-surface of SiO2.

Chemical Vapor Deposition of Niobium Carbide using a Novel Organometallic Precursor.

1989 ◽  
Vol 168 ◽  
Author(s):  
Paul D. Stupik ◽  
Linda K. Cheatham ◽  
John J. Graham ◽  
Andrew R. Barron
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Photoelectron Spectroscopy ◽  
Atmospheric Pressure ◽  
Niobium Carbide ◽  
Chemical Vapor ◽  
Stoichiometric Ratio ◽  
X Ray ◽  
Organometallic Precursor ◽  
Scanning Electron

AbstractChemical vapor deposition from (MeCp)2Nb(allyl) at atmospheric pressure yields niobium carbide films at temperatures as low as 300°C. X-ray photoelectron spectroscopy (XPS) studies indicate that the bulk films contain a carbide phase and a nearly stoichiometric ratio of niobium to carbon. The morphology of the films has been examined by scanning electron microscopy (SEM).

Growth of Highly Oriented Zinc Oxide Thin Films by Plasma Enhanced Chemical Vapor Deposition

2006 ◽  
Vol 321-323 ◽  
pp. 1687-1690 ◽  
Author(s):  
Hee Joon Kim ◽  
Dong Young Jang ◽  
Prem Kumar Shishodia ◽  
Akira Yoshida
Keyword(s):  
Thin Films ◽  
Zinc Oxide ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Photoelectron Spectroscopy ◽  
Visible Region ◽  
Chemical Vapor ◽  
Zno Films ◽  
X Ray ◽  
Crystalline Films

In the paper, zinc oxide (ZnO) thin films are deposited by plasma enhanced chemical vapor deposition (PECVD) at different substrate temperatures. The ZnO films are characterized by X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS). The analysis results indicate that highly crystalline films with high orientation can be obtained at a substrate temperature of 300 oC with 50 ml/min flow rate from Diethylzinc (DEZ). Furthermore, the investigation of optical property shows that ZnO films are transparent, and the peak transmittance in the visible region is as high as 85%.

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