Scanning probe microscopy generated out-of-plane deformation maps exhibiting heterogeneous nanoscale deformation resulting from thermal cycling of Cu–polyimide damascene interconnects

2001 ◽  
Vol 16 (12) ◽  
pp. 3560-3566 ◽  
Author(s):  
Todd S. Gross ◽  
Nazri bin Kamsah ◽  
Igor I. Tsukrov

Room-temperature scanning probe microscopy was used to generate out-of-plane deformation maps around Cu vias and polyimide mesas in single-level Cu–polyimide damascene interconnect structures subjected to a room-temperature to 350 °C thermal cycle. The deformation maps are obtained by taking the difference between the images obtained before and after thermal processing. The deformation of the Cu is shown to be highly heterogeneous on the submicrometer scale. Direct evidence of Cu–Ta interfacial sliding, Cu–Cu grain boundary sliding, and diffusion creep is presented. The direction of Cu–Ta sliding is shown to depend on polyimide mesa size. A hot-stage atomic force microscope was used to show that hillock/extrusion growth occurs at temperatures between 130 and 180 °C. We propose that this hillock/extrusion growth is correlated with dips in stress–temperature plots for blanket, uncapped Cu films in the same temperature range and that the absence of dips for nitride-capped Cu films is due to suppression of the hillock/extrusion growth.

2010 ◽  
Vol 1255 ◽  
Author(s):  
Ronald Tararam ◽  
Igor Bdikin ◽  
Jose Varela ◽  
Paulo R Bueno ◽  
Andrei L. Kholkin

AbstractScanning probe microscopy (SPM) was used to probe piezoelectric vibrations and local conductivity in CaCu3Ti4O12(CCTO) ceramics at room temperature. Piezoelectric contrast was observed on the polished surfaces of CCTO in both vertical (out-of-plane) and lateral (in-plane) modes and depended on the grain orientation varying in sign and amplitude. The piezoelectric contrast is shown to be controlled by the electrical bias (local poling) and displayed a ferroelectric-like reversible hysteresis accompanied with a change of the phase of piezoelectric signal. Flexoelectric effect (strain-gradient-induced polarization) due to surface relaxation was invoked to explain the observed contrast inside the grains.


2016 ◽  
Vol 288 ◽  
pp. 325-330 ◽  
Author(s):  
Kerstin Neuhaus ◽  
Falk Schulze-Küppers ◽  
Stefan Baumann ◽  
Gregor Ulbrich ◽  
Martin Lerch ◽  
...  

Author(s):  
Kevin M. Shakesheff ◽  
Martyn C. Davies ◽  
Clive J. Roberts ◽  
Saul J. B. Tendler ◽  
Philip M. Williams

Author(s):  
Benedict Drevniok ◽  
St. John Dixon-Warren ◽  
Oskar Amster ◽  
Stuart L Friedman ◽  
Yongliang Yang

Abstract Scanning microwave impedance microscopy was used to analyze a CMOS image sensor sample to reveal details of the dopant profiling in planar and cross-sectional samples. Sitespecific capacitance-voltage spectroscopy was performed on different regions of the samples.


Author(s):  
Swaminathan Subramanian ◽  
Khiem Ly ◽  
Tony Chrastecky

Abstract Visualization of dopant related anomalies in integrated circuits is extremely challenging. Cleaving of the die may not be possible in practical failure analysis situations that require extensive electrical fault isolation, where the failing die can be submitted of scanning probe microscopy analysis in various states such as partially depackaged die, backside thinned die, and so on. In advanced technologies, the circuit orientation in the wafer may not align with preferred crystallographic direction for cleaving the silicon or other substrates. In order to overcome these issues, a focused ion beam lift-out based approach for site-specific cross-section sample preparation is developed in this work. A directional mechanical polishing procedure to produce smooth damage-free surface for junction profiling is also implemented. Two failure analysis applications of the sample preparation method to visualize junction anomalies using scanning microwave microscopy are also discussed.


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