High-temperature oxidation of CoGa: Influence of the crystallographic orientation on the oxidation rate

2002 ◽  
Vol 17 (10) ◽  
pp. 2489-2498 ◽  
Author(s):  
U. Koops ◽  
D. Hesse ◽  
M. Martin

The crystallographic orientation plays an important role in high-temperature oxidation of the intermetallic compound CoGa. When CoGa is exposed to air at elevated temperatures, the oxide β–Ga2O3 is formed, and different scale growth rates are observed, depending on the crystallographic orientation of the CoGa grains. This dependence is a consequence of the anisotropy of the gallium diffusion rate through the β–Ga2O3 scale and of a topotaxial orientation relationship occurring between β–Ga2O3 and CoGa. The combination of ex situ techniques, such as transmission electron microscopy and electron backscatter diffraction with optical microscopy, applied in situ resulted in a thorough understanding of these relations and of the oxidation process in general.

2011 ◽  
Vol 696 ◽  
pp. 28-33
Author(s):  
Manfred Martin

In oxides which are exposed to thermodynamic potential gradients, transport processes of the mobile components occur. These transport processes and the coupling between different processes are not only of fundamental interest, but are also the origin of degradation processes, such as kinetic demixing, kinetic decomposition, and changes in the morphology of the material. The kinetics of high temperature oxidation processes of metals can be studiedin situby X-ray absorption spectroscopy (XAS), optical microscopy and X-ray diffraction (XRD) at elevated temperatures and defined oxygen partial pressures. As an example, thein situXAS investigation of the oxidation of cobalt, forming layers of CoO and Co3O4, will be discussed.


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