X-ray photoelectron spectroscopy study of the metal/polymer contacts involving aluminum and poly(3,4-ethylenedioxythiophene)-poly(styrenesulfonic acid) derivatives

The contact formed between aluminum and poly(3,4-ethylenedioxythiophene)-poly(styrenesulfonic acid) (PEDOT-PSS) derivatives was studied using x-ray photoelectron spectroscopy. The aluminum/PEDOT-PSS contact contains an interfacial layer formed by chemical reactions between aluminum and mainly poly(styrenesulfonic acid) (PSSH). These chemical interactions were studied with the help of model systems (PSSH, benzenesulfonic acid, and sodium benzenesulfonate). The preferred reaction site of aluminum is the SO3− and SO3−H+ groups of the PSS chains, giving rise to C-S-Al(-O) and C-O-Al species. The resulting contact formed consists of an insulating aluminum/PSS layer and a thin region of partially dedoped PEDOT-PSS. There is significant aluminum diffusion into films of the highly conducting form of PEDOT-PSS that have substantially less PSS at the surface. Hence, no (thick) aluminum/PSS layer is formed in this case, though the PEDOT chains close to the aluminum contact will still be partially dedoped as for the aluminum/PEDOT-PSS case.

Download Full-text

X-Ray Photoelectron Spectroscopy Study of Si-C Film Growth by Chemical Vapor Deposition of Ethylene on Si(100)

10.21236/ada197437 ◽

1988 ◽

Author(s):

P. A. Taylor ◽

M. Bozack ◽

W. J. Choyke ◽

J. T. Yates ◽

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Photoelectron Spectroscopy ◽

Film Growth ◽

Chemical Vapor ◽

Spectroscopy Study ◽

X Ray

Download Full-text

Nitrogen (N2) Implantation to Suppress Growth of Interfacial Oxide in Mocvd Bst and Sputtered Bst Films

MRS Proceedings ◽

10.1557/proc-567-521 ◽

1999 ◽

Vol 567 ◽

Cited By ~ 5

Author(s):

Renee Nieh ◽

Wen-Jie Qi ◽

Yongjoo Jeon ◽

Byoung Hun Lee ◽

Aaron Lucas ◽

...

Keyword(s):

Photoelectron Spectroscopy ◽

Interfacial Layer ◽

Gate Dielectric ◽

Nitrogen Concentration ◽

Chemical Vapor ◽

Future Generation ◽

Oxide Thickness ◽

Layer Growth ◽

X Ray ◽

Bst Films

ABSTRACTBa0.5Sr0.5TiO3 (BST) is one of the high-k candidates for replacing SiO2 as the gate dielectric in future generation devices. The biggest obstacle to scaling the equivalent oxide thickness (EOT) of BST is an interfacial layer, SixOy, which forms between BST and Si. Nitrogen (N2) implantation into the Si substrate has been proposed to reduce the growth of this interfacial layer. In this study, capacitors (Pt/BST/Si) were fabricated by depositing thin BST films (50Å) onto N2 implanted Si in order to evaluate the effects of implant dose and annealing conditions on EOT. It was found that N2 implantation reduced the EOT of RF magnetron sputtered and Metal Oxide Chemical Vapor Deposition (MOCVD) BST films by ∼20% and ∼33%, respectively. For sputtered BST, an implant dose of 1×1014cm−;2 provided sufficient nitrogen concentration without residual implant damage after annealing. X-ray photoelectron spectroscopy data confirmed that the reduction in EOT is due to a reduction in the interfacial layer growth. X-ray diffraction spectra revealed typical polycrystalline structure with (111) and (200) preferential orientations for both films. Leakage for these 50Å BST films is on the order of 10−8 to 10−5 A/cm2—lower than oxynitrides with comparable EOTs.

Download Full-text