Electrooptic properties of highly oriented Pb(Zr,Ti)O3 film grown on glass substrate using lanthanum nitrate as a buffer layer

2004 ◽  
Vol 19 (11) ◽  
pp. 3152-3156 ◽  
Author(s):  
Jong-Jin Choi ◽  
Gun-Tae Park ◽  
Hyoun-Ee Kim
Keyword(s):  
Single Crystal ◽  
Buffer Layer ◽  
Sol Gel ◽  
Metal Electrode ◽  
Lanthanum Nitrate ◽  
Propagation Loss ◽  
Optical Propagation ◽  
Amorphous Substrate ◽  
Pzt Films ◽  
Amorphous Substrates

Materials with preferred orientation exhibit unique properties that are frequently improved in comparison with those that are randomly oriented. Optical waveguide devices require high-quality single-crystal–like thin films because of their low optical propagation loss and their near–single-crystal properties. The growth mechanisms of textured films on non-lattice matched amorphous substrates, such as glass, are different from those on single-crystal substrates or the surface of a metal electrode. In this study, highly (100) oriented Pb(Zr,Ti)O3 PZT films were grown on an amorphous substrate by means of the sol-gel multicoating method, using lanthanum nitrate as a buffer layer. The lanthanum nitrate buffer layer was also very effective as a diffusion barrier against Pb-Si interdiffusion. The electrooptic properties of the PZT films were markedly enhanced when their orientation was adjusted to the (100) direction.

Deposition of Highly (100) Oriented PZT Film Using Lanthanum Nitrate/Nickel Acetate Buffer Layer

2005 ◽  
Vol 902 ◽  
Author(s):  
Jong-Jin Choi ◽  
Byung-Dong Hahn ◽  
Joo-Hee Jang ◽  
Woon-Ha Yoon ◽  
Dong-Soo Park ◽  
...  
Keyword(s):  
Buffer Layer ◽  
Intermediate Phase ◽  
Lanthanum Nitrate ◽  
Nickel Acetate ◽  
Acetate Buffer ◽  
Double Layers ◽  
Glass Substrates ◽  
Lanthanum Nickel Oxide ◽  
Pzt Film ◽  
Pzt Films

AbstractHighly (100) oriented Pb(Zr,Ti)O3 [PZT] films were fabricated using lanthanum nitrate/nickel acetate double layers as a buffer layer, regardless of the other deposition conditions, such as the pyrolysis temperature, pyrolysis time, annealing temperature, and heating rate. The buffer layer was also acted as a very effective barrier against Pb-Si interdiffusion, thus allowing for the direct deposition of PZT films on Si, SiO2/Si, and glass substrates. The strong orientation was attributed to the formation of a crystalline intermediate phase between the PZT and lanthanum nitrate during annealing. The lanthanum nitrate/nickel acetate double layers became a lanthanum nickel oxide (LaNiO3), which shows good electrical conductivity, after an annealing process at 650°C. The nature and the role of lanthanum nitrate buffer as a layer for the growth of highly (100) oriented PZT films have been studied. The dielectric, ferroelectric, piezoelectric and electrooptic properties of the highly (100) oriented PZT films with a lanthanum nitrate/nickel acetate buffer layer were measured and compared with the values measured from the (111) and (100) oriented PZT films deposited without buffer layer.

Characterization and optical propagation loss of sol-gel derived TiO2/SiO2films

2000 ◽  
Vol 33 (23) ◽  
pp. 3013-3017 ◽  
Author(s):  
Zhai Jiwei ◽  
Yao Xi ◽  
Zhang Liangying
Keyword(s):  
Sol Gel ◽  
Propagation Loss ◽  
Optical Propagation

Preparation of PbZrxTi1−xO3 Films on Si Substrates Using SrTiO3 Buffer Layers

1994 ◽  
Vol 361 ◽  
Author(s):  
Eisuke Tokumitsu ◽  
Kensuke Itani ◽  
Bum-Ki Moon ◽  
Hiroshi Ishiwara
Keyword(s):  
Buffer Layer ◽  
Secondary Ion Mass Spectrometry ◽  
Sol Gel ◽  
Buffer Layers ◽  
Si Substrates ◽  
Pzt Film ◽  
Pzt Films ◽  
Evaporation Technique ◽  
Gel Technique ◽  
Secondary Ion

ABSTRACTWe report the preparation of PbZrxTi1−xO3 (PZT) films on Si substrates with a SrTiO3 (STO) buffer layer. STO buffer layers and PZT films were formed on Si substrates by the electron-beam assisted vacuum evaporation technique and sol-gel technique, respectively. By evaporating a thin (8nm) metal Sr layer prior to the STO deposition, which deoxidizes the SiO2 layer at the Si surface, (100)- and (111)-oriented STO thin films can be grown on Si(100) and (111) substrates, respectively. It is shown that a strongly (100)-oriented PZT film is grown on STO(100)/Si(100), whereas a strongly (111)-oriented PZT film is obtained on STO(111)/Si(111). It is also found that the STO buffer layer remains intact even after the PZT deposition. Secondary ion mass spectrometry (SIMS) analysis showed that the STO barrier layer was effective in preventing diffusion of Pb into the Si substrate.

Effect of heat treatment on formation of sol-gel (Pb, La)TiO3 films for optical application

1997 ◽  
Vol 12 (3) ◽  
pp. 812-818 ◽  
Author(s):  
Junmo Koo ◽  
Sung-Uk Kim ◽  
Dae Sung Yoon ◽  
Kwangsoo No ◽  
Byeong-Soo Bae
Keyword(s):  
Heat Treatment ◽  
Refractive Index ◽  
Film Thickness ◽  
Optical Transmission ◽  
Thick Films ◽  
Sol Gel ◽  
Propagation Loss ◽  
Optical Propagation ◽  
Lanthanum Titanate ◽  
Sol Gel Films

Lead lanthanum titanate [(Pb, La)TiO3] sol-gel films have been prepared to investigate the effect of heat treatment on the fabrication of uniform and crack-free thick films by applying different heating schedules. The surface morphology as well as the optical properties such as refractive index, optical transmission, and optical propagation loss of the films was examined, depending on the film thickness. Because the slower and longer heating is enough to remove the organic and nitrate residues and diminish the thermal shock while heating the films, slower and longer heating can produce the uniform and crack-free thick films having higher refractive index as well as lower optical propagation loss. Also, the drying and heating of the films on a hot plate in every coating resulted in the fabrication of thick films having above 8000 Å without any defects and microcracks. This film presented the highest refractive index as well as the lowest optical propagation loss which grows exponentially with increasing the film thickness due to the scattering of defects in the film.

Preparation of highly C-axis-oriented PZT films on Si substrate with MgO buffer layer by the sol–gel method

2008 ◽  
Vol 69 (2-3) ◽  
pp. 593-596 ◽  
Author(s):  
Wen-Ching Shih ◽  
Zhih-Zhong Yen ◽  
Yuan-Sung Liang
Keyword(s):  
Buffer Layer ◽  
Sol Gel ◽  
Si Substrate ◽  
Gel Method ◽  
Sol Gel Method ◽  
Pzt Films

Ferroelectric Thin Films by sol-gel Processing

1989 ◽  
Vol 152 ◽  
Author(s):  
S. L. Swartz ◽  
P. J. Melling ◽  
C. S. Grant
Keyword(s):  
Thin Films ◽  
Single Crystal ◽  
Sol Gel ◽  
Fused Silica ◽  
Ferroelectric Materials ◽  
Ferroelectric Thin Films ◽  
Silicon Substrates ◽  
Heat Treated ◽  
Pzt Films ◽  
Gel Processing

ABSTRACTThe sol-gel processing of ferroelectric thin films is being investigated at Battelle. The ferroelectric materials included in this study are PbTiO3, Pb(Zr, Ti)O3 (PZT), and KNbO3. The sol-gel processing and crystallization of these films on fused silica, silicon, alumina, and single crystal SrTiO3 substrates is described.Sol-gel derived PbTiO3 thin films crystallized into the expected tetragonal perovskite structure when heated to 500 C and above. However, the crystallization of sol-gel PZT (20/80) thin films was found to be substratedependent. The heat-treated PZT films were amorphous when deposited on silica and silicon substrates. Crystalline perovskite PZT films were produced on alumina substrates, and epitaxial PZT films were produced on single-crystal SrTiO3. Heat treatment of sol-gel KNbO3 films on silicon and alumina substrates resulted in the crystallization of a variety of non-perovskite phases, but epitaxial growth of KNbO3 was observed on single crystal SrTiO3.

Sol-Gel Derived Polyvinylpyrrolidone/Silicon Oxide Composite Materials and Novel Fabrication Technique for Channel Waveguide

1995 ◽  
Vol 392 ◽  
Author(s):  
Makoto Yoshida ◽  
Paras N. Prasad
Keyword(s):  
Thermal Decomposition ◽  
Refractive Index ◽  
Composite Materials ◽  
Silicon Oxide ◽  
Sol Gel ◽  
Propagation Loss ◽  
Slab Waveguides ◽  
Optical Propagation ◽  
Laser Densification ◽  
Channel Waveguides

AbstractSol-gel derived composite materials of polyvinylpyrrolidone (PVP), SiO2 and TiO2 were studied to achieve low optical propagation loss and high thermal stability in slab waveguides. PVP is a thermally crosslinkable polymer. However, the thermal crosslinking and thermal decomposition take place around the same temperature, 200 °C, resulting in high optical propagation loss. The incorporation of sol-gel processed SiO2 prevents thermal decomposition of PVP and produces remarkably low optical propagation loss even after being baked at 230 °C. We have achieved 0.2 dB/cm optical propagation loss at 633 nm. Furthermore, little index change was observed at 110 °C for 1,000 hours after initial slight increase. Impregnation of sol-gel processed TiO2 into the PVP/SiO2 system was also studied to increase refractive index. A broad manipulation of refractive index, from 1.49 to 1.65, with an optical propagation loss of less than 0.6 dB/cm at 633 nm was accomplished by a careful selection of Ti alkoxide and optimized reaction conditions. PVP/SiO2 slab waveguides were then used to fabricate channel waveguides by using a laser densification technique utilizing metal lines as light absorbent and an Ar laser. An optical propagation loss of 0.9 dB/cm was achieved at 633 nm.

Effects of lanthanum nitrate buffer layer on the orientation and piezoelectric property of Pb(Zr,Ti)O3 thick film

2004 ◽  
Vol 19 (12) ◽  
pp. 3671-3678 ◽  
Author(s):  
Jong-Jin Choi ◽  
Gun-Tae Park ◽  
Chee-Sung Park ◽  
Jae-Wung Lee ◽  
Hyoun-Ee Kim
Keyword(s):  
Piezoelectric Property ◽  
Buffer Layer ◽  
Thick Films ◽  
Sol Gel ◽  
Lanthanum Nitrate ◽  
Si Substrates ◽  
Pzt Film ◽  
Heat Treated ◽  
Coating Method ◽  
Ferroelectric Hysteresis

Highly oriented Pb(Zr,Ti)O3 (PZT) films were deposited on Pt/Ti/SiO2/Si substrates by the sol-gel method using lanthanum nitrate as a buffer layer. When the lanthanum nitrate buffer layer was heat treated at temperatures between 450 and 550 °C, the PZT layer coated onto this buffer layer showed a strong (100) preferred orientation. Regardless of the other deposition conditions, such as the pyrolysis temperature, pyrolysis time, annealing temperature and heating rate, the film deposited on the buffer layer had this orientation. Thick films were also fabricated using the sol-gel multi-coating method, and the (100) texture was found to be maintained up to a thickness of 10 μm. The ferroelectric hysteresis and piezoelectric coefficient (d33) of highly oriented PZT thick films were characterized, and the (100) oriented PZT film showed higher piezoelectric property than the (111) oriented film.

Optical and Electro-Optic Properties Of Highly Oriented (Sr,Ba)Nb2O6 Thin Films Prepared by Sol-Gel Process

1999 ◽  
Vol 597 ◽  
Author(s):  
Junmo Koo ◽  
Jae Hyeok Jang ◽  
Byeong-Soo Bae
Keyword(s):  
Thin Films ◽  
Sol Gel ◽  
Optical Scattering ◽  
Propagation Loss ◽  
Refractive Indices ◽  
Optical Propagation ◽  
Electro Optic ◽  
Sol Gel Process ◽  
Oriented Films ◽  
Preferred Oriented

AbstractHighly c-axis oriented SBN thin films with various compositions were obtained on MgO(100) and Pt(100)/MgO(100) substrates. The anisotropy of refractive indices (no and nc) of c-axis preferred oriented films on MgO(100) substrates decreases certainly as Sr content in the film composition increases. The optical propagation loss of the films decreases with increasing Sr content due to the reduction of the optical scattering by the anisotropy of refractive indices. The oriented films show the linear electro-optic effect with large electro-optic coefficients. The coefficient of the films increases as the Sr content increases because the linear electro-optic coefficient is dependent on the spontaneous polarization and the dielectric constant of the films.

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