Deposition of Highly (100) Oriented PZT Film Using Lanthanum Nitrate/Nickel Acetate Buffer Layer

AbstractHighly (100) oriented Pb(Zr,Ti)O3 [PZT] films were fabricated using lanthanum nitrate/nickel acetate double layers as a buffer layer, regardless of the other deposition conditions, such as the pyrolysis temperature, pyrolysis time, annealing temperature, and heating rate. The buffer layer was also acted as a very effective barrier against Pb-Si interdiffusion, thus allowing for the direct deposition of PZT films on Si, SiO2/Si, and glass substrates. The strong orientation was attributed to the formation of a crystalline intermediate phase between the PZT and lanthanum nitrate during annealing. The lanthanum nitrate/nickel acetate double layers became a lanthanum nickel oxide (LaNiO3), which shows good electrical conductivity, after an annealing process at 650°C. The nature and the role of lanthanum nitrate buffer as a layer for the growth of highly (100) oriented PZT films have been studied. The dielectric, ferroelectric, piezoelectric and electrooptic properties of the highly (100) oriented PZT films with a lanthanum nitrate/nickel acetate buffer layer were measured and compared with the values measured from the (111) and (100) oriented PZT films deposited without buffer layer.

Download Full-text

Preparation of PbZrxTi1−xO3 Films on Si Substrates Using SrTiO3 Buffer Layers

MRS Proceedings ◽

10.1557/proc-361-427 ◽

1994 ◽

Vol 361 ◽

Cited By ~ 13

Author(s):

Eisuke Tokumitsu ◽

Kensuke Itani ◽

Bum-Ki Moon ◽

Hiroshi Ishiwara

Keyword(s):

Buffer Layer ◽

Secondary Ion Mass Spectrometry ◽

Sol Gel ◽

Buffer Layers ◽

Si Substrates ◽

Pzt Film ◽

Pzt Films ◽

Evaporation Technique ◽

Gel Technique ◽

Secondary Ion

ABSTRACTWe report the preparation of PbZrxTi1−xO3 (PZT) films on Si substrates with a SrTiO3 (STO) buffer layer. STO buffer layers and PZT films were formed on Si substrates by the electron-beam assisted vacuum evaporation technique and sol-gel technique, respectively. By evaporating a thin (8nm) metal Sr layer prior to the STO deposition, which deoxidizes the SiO2 layer at the Si surface, (100)- and (111)-oriented STO thin films can be grown on Si(100) and (111) substrates, respectively. It is shown that a strongly (100)-oriented PZT film is grown on STO(100)/Si(100), whereas a strongly (111)-oriented PZT film is obtained on STO(111)/Si(111). It is also found that the STO buffer layer remains intact even after the PZT deposition. Secondary ion mass spectrometry (SIMS) analysis showed that the STO barrier layer was effective in preventing diffusion of Pb into the Si substrate.

Download Full-text

Electrooptic properties of highly oriented Pb(Zr,Ti)O3 film grown on glass substrate using lanthanum nitrate as a buffer layer

Journal of Materials Research ◽

10.1557/jmr.2004.0432 ◽

2004 ◽

Vol 19 (11) ◽

pp. 3152-3156 ◽

Cited By ~ 3

Author(s):

Jong-Jin Choi ◽

Gun-Tae Park ◽

Hyoun-Ee Kim

Keyword(s):

Single Crystal ◽

Buffer Layer ◽

Sol Gel ◽

Metal Electrode ◽

Lanthanum Nitrate ◽

Propagation Loss ◽

Optical Propagation ◽

Amorphous Substrate ◽

Pzt Films ◽

Amorphous Substrates

Materials with preferred orientation exhibit unique properties that are frequently improved in comparison with those that are randomly oriented. Optical waveguide devices require high-quality single-crystal–like thin films because of their low optical propagation loss and their near–single-crystal properties. The growth mechanisms of textured films on non-lattice matched amorphous substrates, such as glass, are different from those on single-crystal substrates or the surface of a metal electrode. In this study, highly (100) oriented Pb(Zr,Ti)O3 PZT films were grown on an amorphous substrate by means of the sol-gel multicoating method, using lanthanum nitrate as a buffer layer. The lanthanum nitrate buffer layer was also very effective as a diffusion barrier against Pb-Si interdiffusion. The electrooptic properties of the PZT films were markedly enhanced when their orientation was adjusted to the (100) direction.

Download Full-text

Effects of lanthanum nitrate buffer layer on the orientation and piezoelectric property of Pb(Zr,Ti)O3 thick film

Journal of Materials Research ◽

10.1557/jmr.2004.0470 ◽

2004 ◽

Vol 19 (12) ◽

pp. 3671-3678 ◽

Cited By ~ 12

Author(s):

Jong-Jin Choi ◽

Gun-Tae Park ◽

Chee-Sung Park ◽

Jae-Wung Lee ◽

Hyoun-Ee Kim

Keyword(s):

Piezoelectric Property ◽

Buffer Layer ◽

Thick Films ◽

Sol Gel ◽

Lanthanum Nitrate ◽

Si Substrates ◽

Pzt Film ◽

Heat Treated ◽

Coating Method ◽

Ferroelectric Hysteresis

Highly oriented Pb(Zr,Ti)O3 (PZT) films were deposited on Pt/Ti/SiO2/Si substrates by the sol-gel method using lanthanum nitrate as a buffer layer. When the lanthanum nitrate buffer layer was heat treated at temperatures between 450 and 550 °C, the PZT layer coated onto this buffer layer showed a strong (100) preferred orientation. Regardless of the other deposition conditions, such as the pyrolysis temperature, pyrolysis time, annealing temperature and heating rate, the film deposited on the buffer layer had this orientation. Thick films were also fabricated using the sol-gel multi-coating method, and the (100) texture was found to be maintained up to a thickness of 10 μm. The ferroelectric hysteresis and piezoelectric coefficient (d33) of highly oriented PZT thick films were characterized, and the (100) oriented PZT film showed higher piezoelectric property than the (111) oriented film.

Download Full-text

Growth of highly (100) oriented lead zirconate titanate films on silicon and glass substrates using lanthanum nitrate as a buffer layer

Applied Physics Letters ◽

10.1063/1.1819519 ◽

2004 ◽

Vol 85 (20) ◽

pp. 4621-4623 ◽

Cited By ~ 12

Author(s):

Jong-Jin Choi ◽

Chee-Sung Park ◽

Gun-Tae Park ◽

Hyoun-Ee Kim

Keyword(s):

Buffer Layer ◽

Lead Zirconate Titanate ◽

Lead Zirconate ◽

Lanthanum Nitrate ◽

Glass Substrates ◽

Zirconate Titanate

Download Full-text

Ferroelectric and piezoelectric properties of highly oriented Pb(Zr,Ti)O3 film grown on Pt/Ti/SiO2/Si substrate using conductive lanthanum nickel nitrate buffer layer

Journal of Materials Research ◽

10.1557/jmr.2005.0087 ◽

2005 ◽

Vol 20 (3) ◽

pp. 726-733 ◽

Cited By ~ 3

Author(s):

Jong-Jin Choi ◽

Gun-Tae Park ◽

Chee-Sung Park ◽

Hyoun-Ee Kim

Keyword(s):

Thin Film ◽

Buffer Layer ◽

Lead Zirconate Titanate ◽

Piezoelectric Properties ◽

Nickel Nitrate ◽

Si Substrate ◽

Pzt Thin Film ◽

Pzt Films ◽

Lanthanum Nickel ◽

Ferroelectric And Piezoelectric Properties

The orientation and electrical properties of Pb(Zr,Ti)O3 thin films deposited on a Pt/Ti/SiO2/Si substrate using lanthanum nickel nitrate as a conductive buffer layer were analyzed. The lanthanum nickel nitrate buffer layer was not only electrically conductive but also effective in controlling the texture of the lead zirconate titanate (PZT) thin film. The role of the lanthanum nickel nitrate buffer layer and its effects on the orientation of the PZT thin film were analyzed by x-ray diffraction, electron beam back-scattered diffraction, and scanning electron microscopy. The annealed lanthanum nickel nitrate buffer layer was sufficiently conducting for use in longitudinal electrode configuration devices. The dielectric, ferroelectric, and piezoelectric properties of the highly (100) oriented PZT films grown with the lanthanum nickel nitrate buffer layer were measured and compared with those of (111) and (100) oriented PZT films deposited without a buffer layer.

Download Full-text

Fabrication of Thick, Sol Gel Pzt Films: Applications to Macroscopic Piezoelectric Devices

MRS Proceedings ◽

10.1557/proc-360-103 ◽

1994 ◽

Vol 360 ◽

Cited By ~ 3

Author(s):

D.A. Barrow ◽

T.E. Petroff ◽

M. Sayer

Keyword(s):

Lead Zirconate Titanate ◽

Sol Gel ◽

Low Frequency ◽

Lead Zirconate ◽

Resonant Vibrations ◽

Pzt Film ◽

Sol Gel Process ◽

Pzt Films ◽

High Frequency Resonance ◽

Piezoelectric Devices

AbstractLead zirconate titanate (PZT) films of up to 60 μm in thickness have been fabricated on a wide variety of substrates using a new sol gel process. The dielectric properties (∈ = 900), ferroelectric (Ec = 16 kV/cm and Pr = 35 μC/cm 2) and piezoelectric properties are comparable to bulk values. The characteristic Curie point of these films is at 420 °C. Piezoelectric actuators have been developed by depositing thick PZT films on both planar and coaxial substrates. Stainless steel cantilevers and optical fibres coated with a PZT film exhibit flexure mode resonant vibrations observable with the naked eye. A low frequency in-line fibre optic modulator has been developed using a PZT coated optical fibre. The high frequency resonance of a 60 μm film on a aluminum substrate has been observed.

Download Full-text

One-Axis-Oriented Crystal Growth of Lead Zirconate Titanate Thin Films on Metal Substrates Using Perovskite-Type Oxide Nanosheet Layer

Key Engineering Materials ◽

10.4028/www.scientific.net/kem.582.15 ◽

2013 ◽

Vol 582 ◽

pp. 15-18

Author(s):

Y. Minemura ◽

Y. Kondoh ◽

H. Funakubo ◽

Hiroshi Uchida

Keyword(s):

Lead Zirconate Titanate ◽

Remanent Polarization ◽

Lead Zirconate ◽

Chemical Solution ◽

Oriented Crystal ◽

Solution Deposition ◽

Pzt Film ◽

Perovskite Type Oxide ◽

Pzt Films ◽

Perovskite Type

One-axis-oriented Pb (Zr,Ti)O3(PZT) films were fabricated using a chemical solution deposition technique on (111)Pt/TiO2/(100)Si and Inconel625 substrates buffered by nanosheet Ca2Nb3O10(ns-CN). The (001)-oriented PZT crystals (Zr/Ti=0.40:0.60, tetragonal) were preferentially grown on (001)ns-CN/Inconel625, whereas the PZT crystals deposited on (001)ns-CN/(111)Pt/ TiO2/(100)Si exhibited preferential PZT(100) orientation. The resulting PZT film on (001)ns-CN/Inconel625 indicated remanent polarization of approximately 59 μC/cm2, which was significantly larger than that on (001)ns-CN/(111)Pt/TiO2/(100)Si.

Download Full-text

Insertion of a TiO$_{2}$ Buffer Layer for the Fixation ofElectrospun TiO$_{2}$ Nanofibers on Glass Substrates

Journal of the Korean Physical Society ◽

10.3938/jkps.55.84 ◽

2009 ◽

Vol 55 (1) ◽

pp. 84-88 ◽

Cited By ~ 5

Author(s):

DeukYong Lee ◽

Jung-Eun Cho ◽

Myung-Hyun Lee ◽

Nam-Ihn Cho ◽

Yo-Seung Song

Keyword(s):

Buffer Layer ◽

Glass Substrates

Download Full-text

PZT Thin Films on Silicon Substrates: Formation and Research of Properties

Nano Hybrids and Composites ◽

10.4028/www.scientific.net/nhc.28.65 ◽

2020 ◽

Vol 28 ◽

pp. 65-70 ◽

Cited By ~ 1

Author(s):

Victor V. Petrov ◽

Yuriy N. Varzarev ◽

Anton S. Kamentsev ◽

Andrey A. Rozhko ◽

Oksana A. Pakhomova

Keyword(s):

Lead Zirconate Titanate ◽

Test Bench ◽

Surface States ◽

Lead Zirconate ◽

Silicon Substrates ◽

Ferroelectric Films ◽

Pzt Film ◽

Structure Morphology ◽

Pzt Films ◽

Electrophysical Parameters

In this paper, we consider the technological features of the formation of thin ferroelectric films of lead zirconate titanate (PZT) by the method of plasma high-frequency reactive sputtering. The crystal structure, morphology and elemental composition of films deposited on silicon and oxidized silicon substrates are investigated. It is shown that the obtained PZT films have a perovskite structure and are polycrystalline with a predominant crystallite growth in the (110) direction. An automated test bench has been designed and manufactured for measuring the electrophysical parameters of ferroelectric films. The measured CV characteristics of the Ni/PZT/Si structure show the hysteresis caused by the polarization of the PZT film. It is noted that the asymmetry of the dependence of the spontaneous polarization on the applied voltage can be caused by the presence of surface states at the PZT/Si interface.

Download Full-text