P-type CuInSe2 thin films prepared by selenization of one-step electrodeposited precursors

2009 ◽  
Vol 24 (7) ◽  
pp. 2293-2300 ◽  
Author(s):  
Lei Wan ◽  
Yongsheng Cao ◽  
Deliang Wang
Keyword(s):  
Film Surface ◽  
Atomic Ratio ◽  
Flux Agent ◽  
Solar Cell Application ◽  
Element Transport ◽  
Good Crystalline Quality ◽  
One Step ◽  
Higher Temperature ◽  
P Type ◽  
Selenization Temperature

In this study, p-type CuInSe2 (CIS) films were prepared by selenization of one-step electrodeposited Cu-In-2Se (atomic ratio) precursors. To obtain high-quality, dense, and homogeneous CIS films for solar cell application, the effects of substrate temperatures during selenization and precursor compositions on the final microstructures were systematically investigated. The precursor layers evolved in very different ways under different selenization conditions. The final microstructures and phases of the films depended critically on the precursor compositions, selenization temperature, and the selenization thermal process history. Low melting temperature CuxSe phase, which tended to segregate at the film surface, can efficiently assist the CIS grain growth. Large hexagonal CuSe platelets were formed at a temperature as low as 170 °C in Cu-rich precursor, which acted as an element-transport flux agent at higher temperature under high Se vapor and reacted with In-Se selenide to form CIS at temperatures above 500 °C. Good crystalline quality chalcopyrite CIS film was obtained at a selenization temperature of 550 °C.

Fabrication and Characterization of CIASSe Thin Film Photovoltaic Absorbers Using CIAS Nanocrystals

2012 ◽  
Vol 512-515 ◽  
pp. 39-42
Author(s):  
Bei Zhu ◽  
Cheng Jun Zhu ◽  
Shan Chang ◽  
Yong Wen Zhang ◽  
Chao Zheng Wang
Keyword(s):  
Thin Film ◽  
Hall Effect Measurement ◽  
Optical Absorption Coefficient ◽  
X Ray Diffraction ◽  
Glass Substrates ◽  
One Step ◽  
Diffraction Peaks ◽  
P Type ◽  
Selenization Temperature

Cu(In0.8Al0.2)(SSe)2 (CIASSe) absorber layers of thin film solar cell were prepared by selenization of Cu(In0.8Al0.2)S2(CIAS) nanocrystals. The CIAS nanocrystals were synthesized by a new solution-based technique and successfully deposited on Mo-coated glass substrates in a one-step process. The phase structure, optical and electrical properties of CIASSe thin films were characterized by power X-ray diffraction (XRD), ultraviolet-visible (UV-Vis) spectrophotometer and the Hall Effect Measurement system. The results showed that single-phase CIASSe solid solution was successfully obtained for a selenization temperature of above 400oC. And the diffraction peaks shifted to the lower angle with an increase in selenization time and selenization temperature. The films selenized at 500oC were found to be p-type and the resistivity was only 0.9484×10-4Ω cm. The optical band gap of the films is 1.508eV and the optical absorption coefficient is over 104cm-1.

scholarly journals One-step synthesis of nitrogen-grafted copper-gallic acid for enhanced methylene blue removal

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Shella Permatasari Santoso ◽  
Vania Bundjaja ◽  
Artik Elisa Angkawijaya ◽  
Chintya Gunarto ◽  
Alchris Woo Go ◽  
...  
Keyword(s):  
Methylene Blue ◽  
Adsorption Capacity ◽  
Gallic Acid ◽  
Synthesis Method ◽  
Molar Ratio ◽  
X Ray Diffraction ◽  
Temperature Dependent ◽  
One Step ◽  
Detailed Assessment ◽  
Higher Temperature

AbstractNitrogen-grafting through the addition of glycine (Gly) was performed on a metal- phenolic network (MPN) of copper (Cu2+) and gallic acid (GA) to increase its adsorption capacity. Herein, we reported a one-step synthesis method of MPN, which was developed according to the metal–ligand complexation principle. The nitrogen grafted CuGA (Ng-CuGA) MPN was obtained by reacting Cu2+, GA, and Gly in an aqueous solution at a molar ratio of 1:1:1 and a pH of 8. Several physicochemical measurements, such as Fourier transform infrared (FTIR) spectroscopy, scanning electron microscopy (SEM), N2 sorption, X-ray diffraction (XRD), and thermal gravimetry analysis (TGA), were done on Ng-CuGA to elucidate its characteristics. The analysis revealed that the Ng-CuGA has non-uniform spherical shaped morphology with a pore volume of 0.56 cc/g, a pore size of 23.25 nm, and thermal stability up to 205 °C. The applicational potential of the Ng-CuGA was determined based on its adsorption capacity against methylene blue (MB). The Ng-CuGA was able to adsorb 190.81 mg MB per g adsorbent at a pH of 6 and temperature of 30 °C, which is 1.53 times higher than the non-grafted CuGA. Detailed assessment of Ng-CuGA adsorption properties revealed their pH- and temperature-dependent nature. The adsorption capacity and affinity were found to decrease at a higher temperature, demonstrating the exothermic adsorption behavior.

Synthesis of Silicon Nanowire Arrays by Metal-Assisted Chemical Etching in Aqueous NH4HF2 Solution

2012 ◽  
Vol 21 ◽  
pp. 109-115 ◽  
Author(s):  
S. Naama ◽  
T. Hadjersi ◽  
G. Nezzal ◽  
L. Guerbous
Keyword(s):  
Silicon Nanowires ◽  
Chemical Etching ◽  
Silicon Nanowire ◽  
Nanowire Arrays ◽  
Etching Time ◽  
Silicon Nanowire Arrays ◽  
Peak Intensity ◽  
One Step ◽  
Etching Parameters ◽  
P Type

One-step metal-assisted electroless chemical etching of p-type silicon substrate in NH4HF2/AgNO3 solution was investigated. The effect of different etching parameters including etching time, temperature, AgNO3 concentration and NH4HF2 concentration were investigated. The etched layers formed were investigated by scanning electron microscopy (SEM) and Photoluminescence. It was found that the etched layer was formed by well-aligned silicon nanowires. It is noted that their density and length strongly depend on etching parameters. Room temperature photoluminescence (PL) from etched layer was observed. It was observed that PL peak intensity increases significantly with AgNO3 concentration.

Highly Doped P-Type, N-Type CdS Thin Films and Diodes

1993 ◽  
Vol 329 ◽  
Author(s):  
Wen P. Shen ◽  
Hoi S. Kwok
Keyword(s):  
Thin Films ◽  
Doping Concentration ◽  
Annealing Process ◽  
Laser Deposition ◽  
Post Annealing ◽  
Gaas Substrates ◽  
Cds Thin Film ◽  
Good Crystalline Quality ◽  
Cds Thin Films ◽  
P Type

AbstractCdS thin films with doping concentration as high as 1017 cm-3 for p-type or 1021 cm-3 for n-type were achieved by pulsed excimer laser deposition without any post-annealing process. These films were grown on InP or GaAs substrates with good crystalline quality. By using this technique, CdS thin film p-n junctions were produced successfully.

scholarly journals A Microscopy and FTIR and PL Spectra Study of Polycrystalline Diamonds from Mengyin Kimberlite Pipes

2012 ◽  
Vol 2012 ◽  
pp. 1-10 ◽  
Author(s):  
Zhijun Yang ◽  
Rong Liang ◽  
Xiangqing Zeng ◽  
Mingsheng Peng
Keyword(s):  
Growth Period ◽  
Diamond Growth ◽  
Dissolution Process ◽  
Diamond Nucleation ◽  
Pl Spectra ◽  
Nucleation Stage ◽  
Diamond Single Crystals ◽  
Mantle Fluids ◽  
Higher Temperature ◽  
P Type

The results of a microscopy and FTIR and PL spectra study of the natural polycrystalline diamonds from the Mengyin kimberlite pipes show that they can be classified as the euhedral faceted polycrystalline diamonds (EFPCDs) and anhedral rounded polycrystalline diamonds (ARPCDs). Different diamond grains or their points were formed in different conditions or processes. They were not formed in diamond nucleation stage, but in the diamond growth period. They probably originated from the relatively deeper mantle and were formed in the environment like the peridotitic (P) type diamond single crystals. The EFPCDs did not undergo a remarkable dissolution process during their formation and were possibly fast formed shortly before the kimberlite eruption. The ARPCDs not only were formed at a higher temperature than the EFPCDs but also underwent a notable dissolution process and had been stored relatively longer in the mantle. Fluids or melts probably participated in the formation of the ARPCDs or modified them during the period of their storage in the mantle.

P-Type CuInSe2 Thin Films and Solar Cells Prepared by One-Step Electrodeposition

2008 ◽  
pp. 1308-1311
Author(s):  
Lei Wan ◽  
Zhizhong Bai ◽  
Bo Chen ◽  
Renliang Sun ◽  
Guoshun Jiang ◽  
...  
Keyword(s):  
Thin Films ◽  
Solar Cells ◽  
One Step ◽  
P Type

Magnetic photocatalysts with a p–n junction: Fe3O4 nanoparticle and FeWO4 nanowire heterostructures

Nanoscale ◽  
2014 ◽  
Vol 6 (21) ◽  
pp. 12366-12370 ◽  
Author(s):  
Xuan Cao ◽  
Yan Chen ◽  
Shihui Jiao ◽  
Zhenxing Fang ◽  
Man Xu ◽  
...  
Keyword(s):  
Hydrothermal Process ◽  
Fe3o4 Nanoparticle ◽  
Nanowire Heterostructures ◽  
Type Semiconductor ◽  
One Step ◽  
P Type

Magnetic n-type semiconductor Fe3O4 nanoparticle and p-type semiconductor FeWO4 nanowire heterostructures were successfully synthesized without any surfactants or templates via a facile one-step hydrothermal process at 160 °C.

scholarly journals p-Type a-Si:H Doping Using Plasma Immersion Ion Implantation for Silicon Heterojunction Solar Cell Application

Solar RRL ◽  
2017 ◽  
Vol 1 (2) ◽  
pp. 1600007 ◽  
Author(s):  
Tristan Carrere ◽  
Delfina Muñoz ◽  
Marianne Coig ◽  
Christophe Longeaud ◽  
Jean-Paul Kleider
Keyword(s):  
Solar Cell ◽  
Ion Implantation ◽  
Type A ◽  
Heterojunction Solar Cell ◽  
Solar Cell Application ◽  
Silicon Heterojunction Solar Cell ◽  
Plasma Immersion Ion Implantation ◽  
P Type
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