Effects of misfit dislocation and film-thickness on the residual stresses in epitaxial thin film systems: Experimental analysis and modeling

2012 ◽  
Vol 27 (21) ◽  
pp. 2737-2745 ◽  
Author(s):  
Mei Liu ◽  
Haihui Ruan ◽  
Liangchi Zhang ◽  
Alireza Moridi
Keyword(s):  
Thin Film ◽  
Residual Stresses ◽  
Film Thickness ◽  
Misfit Dislocation ◽  
Experimental Analysis ◽  
Epitaxial Thin Film ◽  
Image Position

Abstract

The Improvement of the Micro Torsional Mirror by a Reinforced Folded Frame

2000 ◽  
Author(s):  
Hung-Yi Lin ◽  
Weileun Fang
Keyword(s):  
Thin Film ◽  
Residual Stresses ◽  
Film Thickness ◽  
Experimental Results ◽  
Dynamic Loads ◽  
Inertia Force ◽  
Optical Performance ◽  
Thin Film Thickness ◽  
Static Loads ◽  
Dynamic Inertia

Abstract Stiffness of micromachined structures is limited by thin film thickness. Hence, static loads such as thin film residual stresses, or dynamic loads such as the inertia force could significantly deform the thinness micromachined torsional mirror. This work aims to stiffen the thin film micromachinined torsional mirror. The proposed torsional mirror exploits a reinforced frame to improve the stiffness of the mirror plate. Consequently, the mirror plate has less deformation no matter subject to the residual stresses or to the dynamic inertia force. In addition the reinforced frame stiffen the mirror without increasing the mass significantly. In application of this technique, the micro torsional mirror was fabricated through the integration of DRIE, conventional bulk and surface micromachining processes. The experimental results demonstrated that the proposed design significantly improves the flatness of the mirror plate in both static and dynamic conditions. Consequently, the optical performance of the micro torsional mirror was improved.

RESIDUAL STRESSES IN OBLIQUE INCIDENCE DEPOSITED ALUMINA THIN FILM

2014 ◽  
Vol 21 (02) ◽  
pp. 1450024 ◽  
Author(s):  
LIJUN HE ◽  
CHUAN LI ◽  
XINGZHAO LIU
Keyword(s):  
Thin Film ◽  
Residual Stress ◽  
Residual Stresses ◽  
Film Thickness ◽  
Substrate Temperature ◽  
Deposition Rate ◽  
Growth Parameters ◽  
Testing Temperature ◽  
Alumina Thin Film ◽  
Inclined Angle

Residual stresses of alumina thin film deposited on silicon substrate by using electron beam evaporation with oblique angle deposition (OAD) method are studied. The growth parameters that affect the residual stresses of alumina thin film, such as the substrate temperature, the deposition rate, the film thickness, the inclined angle, and the testing temperature are discussed. The results show that the tensile stress value decreases with the increasing substrate temperature, and the compressive stress value increases with the increasing substrate temperature at various inclined angles. Along with the deposition rate increasing, the residual stress value decreases at various inclined angles. With the increasing film thickness, the residual stress value decreases at various inclined angles. With the increasing testing temperature, the residual stress value increases at various inclined angles. While the alumina thin film residual stress value is small at high inclined angle. By choosing the appropriate film preparation parameters, the alumina thin film residual stress is effectively controlled.

Geometric Phase Analysis of Nano-Scale Strain Fields Around 90° Domains in PbTiO3/SrTiO3 Epitaxial Thin Film

2009 ◽  
Vol 1199 ◽  
Author(s):  
Takanori Kiguchi ◽  
Kenta Aoyagi ◽  
Toyohiko J. Konno ◽  
Satoru Utsugi ◽  
Tomoaki Yamada ◽  
...  
Keyword(s):  
Thin Film ◽  
Phase Analysis ◽  
Misfit Dislocation ◽  
Geometric Phase ◽  
Misfit Dislocations ◽  
Epitaxial Thin Film ◽  
Strain Fields ◽  
Geometric Phase Analysis ◽  
Domain Configuration ◽  
A Domains

AbstractThe nano-scale strain fields analysis around 90° domains and misfit dislocations in PbTiO3/SrTiO3 001 epitaxial thin film has been conducted using the geometric phase analysis (GPA) combined with high angle annular dark field - scanning transmission electron microscopy (HAADF-STEM). The films typically possess a-c mixed domain configuration with misfit dislocations. The PbTiO3 layer was formed from the two layer: the upper 200 nm layer shows the typical a- and c- mixed domain configuration where the a-domains are several tens nm in width; the bottom 100 nm layer shows the different domain configuration that the width is several nm. In the latter case, a-domains are terminated within the film and are short in length. On the other hand, the bottom of a-domains does not contact the film/substrate interface. It keeps away from the interface, and there is completely c-domain layer under a-domains. The HAADF-STEM-GPA shows that the strain fields around an a-domain and a misfit dislocation interact each other: the tensile strain field and lattice plane bending fit together. This result indicates that the a-domain originates from the misfit dislocation.

Film-thickness and composition dependence of epitaxial thin-film PZT-based mass-sensors

2013 ◽  
Vol 199 ◽  
pp. 98-105 ◽  
Author(s):  
Minh Duc Nguyen ◽  
Matthijn Dekkers ◽  
Hung Ngoc Vu ◽  
Guus Rijnders
Keyword(s):  
Thin Film ◽  
Film Thickness ◽  
Composition Dependence ◽  
Epitaxial Thin Film ◽  
Mass Sensors

2D AlB2 flakes for epitaxial thin film growth

2018 ◽  
Vol 33 (16) ◽  
pp. 2318-2326 ◽  
Author(s):  
Mohammad Humood ◽  
Jacob L. Meyer ◽  
Stanislav V. Verkhoturov ◽  
Tanil Ozkan ◽  
Michael Eller ◽  
...  
Keyword(s):  
Thin Film ◽  
Film Growth ◽  
Thin Film Growth ◽  
Epitaxial Thin Film ◽  
Epitaxial Thin Film Growth ◽  
Image Position

Abstract

Temperature-dependent residual stresses in a hetero-epitaxial thin film system

2015 ◽  
Vol 584 ◽  
pp. 186-191 ◽  
Author(s):  
M. Liu ◽  
H.H. Ruan ◽  
L.C. Zhang ◽  
A. Moridi
Keyword(s):  
Thin Film ◽  
Residual Stresses ◽  
Film System ◽  
Temperature Dependent ◽  
Epitaxial Thin Film ◽  
Thin Film System

In-Plane Residual Stresses in Filament-Evaporated Aluminum Films on Single Crystal Silicon Wafers

1989 ◽  
Vol 167 ◽  
Author(s):  
Hai-Woong Park ◽  
Steven Danyluk
Keyword(s):  
Thin Film ◽  
Residual Stresses ◽  
Film Thickness ◽  
Single Crystal ◽  
Single Crystal Silicon ◽  
Aluminum Film ◽  
Silicon Wafers ◽  
Crystal Silicon ◽  
Aluminum Films ◽  
P Type

AbstractThe in-plane residual stresses of single crystal silicon wafers that were coated with filament-evaporated aluminum films have been obtained from measurements of strains produced by shadow Moir interferometry. The aluminum films were deposited as thin film layers over a 8.9cm diameter area on (100) p-type, 10.16cm diameter, 0.05cm thick single crystal silicon wafers, and the stresses were determined by an analysis that accounts for the finite dimensions of the samples. The aluminum film thicknesses varied from 70 to 78Onm. The aluminum films increased the inplane stresses of the wafers by 3 to 15MPa depending on the film thickness.

Electron Optical Study of Surface Morphologies of Crystals

1980 ◽  
Vol 38 ◽  
pp. 376-377
Author(s):  
Sumio Iijima ◽  
Tung Hsu
Keyword(s):  
Thin Film ◽  
Optical Study ◽  
Regular Array ◽  
Surface Steps ◽  
Diffracted Waves ◽  
Image Position ◽  
Surface Morphologies

Suppose the thickness of a thin film of a crystal varies periodically like a regular array of surface steps, kinematical intensities of diffracted waves from this crystal are modulated by a shape transform,

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