A Soft Solution Processing Technique for Preparing Ferrite Films and Their Applications

MRS Bulletin ◽  
2000 ◽  
Vol 25 (9) ◽  
pp. 51-55 ◽  
Author(s):  
Masanori Abe
Keyword(s):  
Integrated Circuits ◽  
Chemical Process ◽  
Processing Technique ◽  
Solution Processing ◽  
Ferrite Film ◽  
Spinel Type ◽  
One Step ◽  
Wet Chemical ◽  
Ferrite Films ◽  
Film Synthesis

“Ferrite plating” is a typical “soft solution processing” (SSP) application; it enables the formation of oxide ferromagnetic films from an aqueous solution atT24−100°C under atmospheric pressure. Using ferrite plating, we can grow crystallized ferrite films of spinel-type (MFe)3O4(where M = Fe, Co, Ni, Zn, Al, Cr, etc.) in one step, requiring no heat treatment. This opens the door to fabricating novel ferritefilm devices using substrates of such nonheat-resistant materials as plastics and GaAs integrated circuits; conventional ferrite-film preparation techniques, such as sputtering, vacuum evaporation, molecularbeam epitaxy, liquid-phase epitaxy, and so on, require high temperatures (>∼600°C) for the crystallization of ferrites, which deteriorates the non-heat-resistant substrates. Ferrite plating is a unique technique that allows us to synthesize ferrite “films” by means of a wet chemical process. There are many techniques, for synthesizing ferrite “particles” from aqueous solutions, but no technique, to our knowledge, enables ferrite-film synthesis by a wet chemical process.

Optimization of Cu/Low-k Dual Damascene Post-Etch Residue and TiN Hard Mask Removal

2016 ◽  
Vol 255 ◽  
pp. 237-241
Author(s):  
Alexander Kabansky ◽  
Glenn Westwood ◽  
Samantha Tan ◽  
Frederic Kovacs ◽  
David Lou ◽  
...  
Keyword(s):  
Chemical Process ◽  
Advanced Technology ◽  
Hard Mask ◽  
Lifetime Optimization ◽  
One Step ◽  
Wet Chemical ◽  
The One ◽  
Technology Nodes ◽  
Low K ◽  
Etch Residue

For advanced technology nodes TiN hard mask integration into Cu/low-k via/trench DD process requires the mask to be fully stripped after DD etching. The one-step H2O2 containing wet chemical clean aiming to removing TiN mask often failed to simultaneously clean etch residue. We developed more reliable two-step wet chemical process combining a solvent-based post-etch residue clean followed by a solvent/H2O2 mixture strip for TiN mask removal. Bath lifetime optimization was also demonstrated.

scholarly journals Diacenopentalene dicarboximides as new n-type organic semiconductors for field-effect transistors

2016 ◽  
Vol 4 (37) ◽  
pp. 8758-8764 ◽  
Author(s):  
Gaole Dai ◽  
Jingjing Chang ◽  
Linzhi Jing ◽  
Chunyan Chi
Keyword(s):  
Organic Semiconductors ◽  
Electron Mobility ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Field Effect Transistors ◽  
Processing Technique ◽  
Solution Processing ◽  
Effect Transistor

Two diacenopentalene dicarboximides were synthesized, and their devices made with solution-processing technique exhibited n-type field-effect transistor behavior with electron mobility of up to 0.06 cm2 V−1 s−1.

Synthesis of Photodefinable RuO2 Precursors For Electrode Contacts

1997 ◽  
Vol 493 ◽  
Author(s):  
K. J. Law ◽  
Y. H. Spooner
Keyword(s):  
Chemical Process ◽  
Ruthenium Complexes ◽  
Ferroelectric Thin Film ◽  
X Ray Diffraction ◽  
X Ray ◽  
Ruthenium Compounds ◽  
Straight Line ◽  
Wet Chemical ◽  
Pattern Forming ◽  
Pattern Resolution

ABSTRACTA wet-chemical process for depositing and patterning RuO2 contacts for use in ferroelectric thin film capacitive devices is described. Three new ruthenium compounds containing photocrosslinkable organic groups have been synthesized which polymerize upon UV exposure. Preliminary pattern forming ability of the new precursors has been tested with the use of a simple straight line contact mask. The exposed portions of the precursor films are resistant to ethanol, acetone, and light abrasion. The formation of crystalline RuO2 upon organic pyrolysis was confirmed by x-ray diffraction. Synthesized ruthenium complexes were compared to commercially available ruthenium acetylacetonate. The synthesized organo-ruthenium complexes showed improvement in pattern resolution and clarity.

Study on the Preparation of TiO2 3D Nanostructure for Photocatalyst by Wet Chemical Process

2020 ◽  
Vol 27 (5) ◽  
pp. 381-387
Author(s):  
Duk-Hee Lee ◽  
◽  
Jae-Ryang Park ◽  
Chan-Gi Lee ◽  
Kyoung-Tae Park ◽  
...  
Keyword(s):  
Chemical Process ◽  
Wet Chemical ◽  
3D Nanostructure

scholarly journals Rapid Synthesis of Metallic Reinforced in Situ Intermetallic Composites in Ti-Al-Nb System via Resistive Sintering

2018 ◽  
Vol 16 (1) ◽  
pp. 869-875
Author(s):  
Mediha İpek ◽  
Tuba Yener ◽  
Gözde Ç. Efe ◽  
Ibrahim Altınsoy ◽  
Cuma Bindal ◽  
...  
Keyword(s):  
High Hardness ◽  
Processing Technique ◽  
Metallic Phase ◽  
Matrix Composites ◽  
Intermetallic Matrix ◽  
One Step ◽  
Intermetallic Matrix Composites ◽  
Hardness Values ◽  
A Current

AbstractIntermetallics are known as a group of materials that draws attention with their features such as ordered structure, high temperature resistance, high hardness and low density. In this paper, it is aimed to obtain intermetallic matrix composites and also to maintain some ductile Nb and Ti metallic phase by using 99.5% purity, 35-44 μm particle size titanium, niobium and aluminium powders in one step via recently developed powder metallurgy processing technique - Electric current activated/assisted sintering system (ECAS). In this way, metallic reinforced intermetallic matrix composites were produced. Dominant phases of TiAl3 and NbAl3 which were the first compounds formed between peritectic reaction of solid titanium, niobium and molten aluminum in Ti-Al-Nb system during 10, 30 and 90 s for 2000 A current and 1.5-2.0 voltage were detected by XRD and SEM-EDS analysis. Hardness values of the test samples were measured by Vickers indentation technique and it was detected that the hardnesses of intermetallic phases as 411 HVN whereas ductile metallic phase as 120 HVN.

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