scholarly journals New Materials for Spintronics

MRS Bulletin ◽  
2003 ◽  
Vol 28 (10) ◽  
pp. 706-710 ◽  
Author(s):  
Scott A. Chambers ◽  
Young K. Yoo
Keyword(s):  
Magnetic Semiconductors ◽  
Spin Injection ◽  
Heusler Alloys ◽  
Host Lattice ◽  
New Materials ◽  
New Class ◽  
Ferromagnetic Metals ◽  
Current State ◽  
Spin Polarized ◽  
Injection Materials

AbstractThis article introduces the October 2003 issue of MRS Bulletin on “New Materials for Spintronics.” As a result of quantum mechanics, the carriers in ferromagnetic metals such as Fe, Co, and Ni are spin-polarized due to an imbalance at the Fermi level in the number of spin-up and spin-down electrons. A carrier maintains its spin polarization as long as it does not encounter a magnetic impurity or interact with the host lattice by means of spin-orbit coupling. The discovery of optically induced, long-lived quantum coherent spin states in semiconductors has created a range of possibilities for a new class of devices that utilize spin. This discovery also points to the need for a wider range of spin-polarized materials that will be required for different device configurations. In this issue of MRS Bulletin, we focus on three classes of candidate spintronic materials and review the current state of our understanding of them: III–V and II–VI semiconductors, oxides, and Heusler alloys. The field of spin-polarized materials is growing very rapidly, and the search for new magnetic semiconductors and other suitable spin-injection materials with higher Curie temperatures is bringing spintronics closer to the realm of being practical.

Creation of Electrical Spin Injectors for Silicon Spintronics: Achievements and Prospects

2015 ◽  
Vol 245 ◽  
pp. 32-41
Author(s):  
Nikolay Plusnin
Keyword(s):  
Electron Spin ◽  
Spin Injection ◽  
Future Research ◽  
Research Directions ◽  
Current State ◽  
Future Research Directions ◽  
Spin Injectors ◽  
Electrical Spin ◽  
Injection Materials

Literature data on the effective electrical injectors of electron spin for silicon spintronics and stages of the investigation of corresponding magnetic tunnel contacts are reviewed up to 2015 year and a consideration of the current state of the research is given. Different structures for the spin injection, materials and possible applications in silicon spintronics are considered and also possible future research directions are outlined.

Short Review and opinion: New matter properties and applications based on Hybrids Graphene based Metamaterials

2020 ◽  
Vol 04 ◽  
Author(s):  
A. Guillermo Bracamonte
Keyword(s):  
Short Review ◽  
New Materials ◽  
Design And Synthesis ◽  
Chemical Structures ◽  
Current State ◽  
Potential Applications ◽  
Fundamental Research ◽  
Miniaturized Instrumentation ◽  
And Control ◽  
Conductive Properties

: Graphene as Organic material showed special attention due to their electronic and conductive properties. Moreover, its highly conjugated chemical structures and relative easy modification permitted varied design and control of targeted properties and applications. In addition, this Nanomaterial accompanied with pseudo Electromagnetic fields permitted photonics, electronics and Quantum interactions with their surrounding that generated new materials properties. In this context, this short Review, intends to discuss many of these studies related with new materials based on graphene for light and electronic interactions, conductions, and new modes of non-classical light generation. It should be highlighted that these new materials and metamaterials are currently in progress. For this reason it was showed and discussed some representative examples from Fundamental Research with Potential Applications as well as for their incorporations to real Advanced devices and miniaturized instrumentation. In this way, it was proposed this Special issue entitled “Design and synthesis of Hybrids Graphene based Metamaterials”, in order to open and share the knowledge of the Current State of the Art in this Multidisciplinary field.

Structural stability, electronic and magnetic behaviour of spin-polarized YCoVZ (Z = Si, Ge) and YCoTiZ (Z = Si, Ge) Heusler alloys

2016 ◽  
Vol 183 ◽  
pp. 524-533 ◽  
Author(s):  
Muhammad Nasir Rasool ◽  
Altaf Hussain ◽  
Athar Javed ◽  
Muhammad Azhar Khan ◽  
F. Iqbal
Keyword(s):  
Structural Stability ◽  
Heusler Alloys ◽  
Magnetic Behaviour ◽  
Spin Polarized

scholarly journals Phase Transitions in Borohydride Perovskites

2014 ◽  
Vol 70 (a1) ◽  
pp. C73-C73
Author(s):  
Pascal Schouwink ◽  
Radovan Cerny
Keyword(s):  
Phase Transitions ◽  
Volume Expansion ◽  
Host Lattice ◽  
High Temperature Phase ◽  
Temperature Phase ◽  
New Class ◽  
Structural Distortions ◽  
Complex Hydrides ◽  
Type Lattice

A series of complex hydrides based on the highly dynamic tetrahydroborate anion BH4-and crystallizing in theABX3type lattice has recently been discovered. They present a rare case of a family of iono-covalent hydrides that has a genuine tunable host lattice, making them an interesting new class of host compounds for not only the design of hydrogen storage materials but also hydride-properties related to heavy metals. Amongst these, preliminary results onREE-based luminescence will be discussed in the neat and doped compounds, the Ln2+excited states surprisingly not being subject to significant quenching by B-H vibrations. Unlike oxide- or halide-perovskites some members of theAB(BH4)3group do not evolve to higher symmetries as a function of temperature. We show by means ofin-situsynchrotron X-ray powder diffraction, vibrational spectroscopy andab initiocalculations in the solid state, that temperature-induced structural distortions in perovskite-typeACa(BH4)3(A= K, Rb, Cs) have their origin in close hydridic di-hydrogen contacts of repulsive nature. Coupling between internal B-H vibrations and phonons results in lattice distortions that are identical in symmetry to well-known instabilities (soft modes) in perovskites, which generally condense to lower temperatures. Anion-substitution BH4-<->X-(X= Halide) calculated on ordered models can relax distortions caused by repulsive effects. High temperature phase-transitions inACa(BH4)3can be of first or second-order, including 2-fold superlattices, simple cubic-cubic transitions accompanied by volume expansion or complex modulated superstructures accompanied by negative volume expansion, as is the case in RbCa(BH4)3. Close di-hydrogen contacts may be suggested as a tool to tailor the crystal symmetry in complex hydride perovskites in the future.

Effective modulation of spin accumulation using a ferromagnetic/nonmagnetic bilayer spin channel

2021 ◽  
Author(s):  
Taisei Ariki ◽  
Tatsuya Nomura ◽  
Kohei Ohnishi ◽  
Takashi Kimura
Keyword(s):  
Spin Injection ◽  
Spin Valve ◽  
Transverse Spin ◽  
Spin Accumulation ◽  
Spin Channel ◽  
Relative Angle ◽  
Channel Layer ◽  
Spin Polarized ◽  
Resistance Model ◽  
Large Spin

Abstract A lateral spin valve consisting of highly spin-polarized CoFeAl electrodes with a CoFeAl/Cu bilayer spin channel has been developed. Despite a large spin absorption into the CoFeAl capping channel layer, an efficient spin injection and detection using the CoFeAl electrodes enable us to observe a clear spin valve signal. We demonstrate that the nonlocal spin accumulation signal is significantly modulated depending on the relative angle of the magnetizations between the spin injector and absorber. The observed modulation phenomena is explained by the longitudinal and transverse spin absorption effects into the CoFeAl channel layer with the spin resistance model.

scholarly journals Integrated Photodetectors Based on Group IV and Colloidal Semiconductors: Current State of Affairs

Micromachines ◽  
2020 ◽  
Vol 11 (9) ◽  
pp. 842
Author(s):  
Principia Dardano ◽  
Maria Antonietta Ferrara
Keyword(s):  
Optoelectronic Devices ◽  
Group Iv ◽  
Future Research ◽  
New Materials ◽  
Light Sensing ◽  
The Past ◽  
Group Iv Semiconductors ◽  
Current State ◽  
State Of Affairs ◽  
Manufacturing Technologies

With the aim to take advantage from the existing technologies in microelectronics, photodetectors should be realized with materials compatible with them ensuring, at the same time, good performance. Although great efforts are made to search for new materials that can enhance performance, photodetector (PD) based on them results often expensive and difficult to integrate with standard technologies for microelectronics. For this reason, the group IV semiconductors, which are currently the main materials for electronic and optoelectronic devices fabrication, are here reviewed for their applications in light sensing. Moreover, as new materials compatible with existing manufacturing technologies, PD based on colloidal semiconductor are revised. This work is particularly focused on developments in this area over the past 5–10 years, thus drawing a line for future research.

scholarly journals Observation of enhanced thermopower due to spin fluctuation in weak itinerant ferromagnet

2019 ◽  
Vol 5 (2) ◽  
pp. eaat5935 ◽  
Author(s):  
Naohito Tsujii ◽  
Akinori Nishide ◽  
Jun Hayakawa ◽  
Takao Mori
Keyword(s):  
Power Factor ◽  
Waste Heat ◽  
Spin Fluctuation ◽  
Heusler Alloys ◽  
Magnetic Interaction ◽  
Weak Ferromagnetism ◽  
Thermoelectric Power Factor ◽  
Ferromagnetic Metals ◽  
Itinerant Ferromagnet ◽  
Increasing Demand

Increasing demand for higher energy efficiency calls for waste heat recovery technology. Thus, facilitating practical thermoelectric generation systems is strongly desired. One option is enhancing the thermoelectric power factor, S2/r, where S is the Seebeck coefficient and r is the electrical resistivity, although it is still challenging because of the trade-off between S and r. We demonstrate that enhanced S2/r can be achieved by incorporating magnetic interaction in ferromagnetic metals via the spin fluctuation arising from itinerant electrons. We show that electron-doped Heusler alloys exhibit weak ferromagnetism at TC near room temperature with a small magnetic moment. A pronounced enhancement around TC was observed, with a 20% improvement in the power factor from the case where spin fluctuation is suppressed by applying magnetic field. This result supports the merit of using spin fluctuation to further enhance thermoelectric properties and the potential to further probe correlations and synergy between magnetic and thermoelectric fields.

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