Atomic Layer Deposition of Dielectrics on Ge and III–V Materials for Ultrahigh Performance Transistors
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AbstractThe prospect of utilizing alternative transistor channel materials for ultrahigh performance transistors will require suitable gate dielectrics for surface-channel field-effect devices. With the utilization of deposited gate dielectrics in large-scale production for Si-based integrated circuits by atomic layer deposition, extending this technology to channel materials that exhibit high bulk mobility behavior is of interest. A review of the current status for atomic layer deposited high-κ dielectrics on Ge and III–V channel materials is presented.
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2005 ◽
Vol 74
(1)
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pp. 181-187
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2004 ◽
Vol 33
(8)
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pp. 912-915
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2012 ◽
Vol 51
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pp. 121101
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2017 ◽
Vol 9
(49)
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pp. 42928-42934
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2015 ◽
Vol 46
(12)
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pp. 1200-1204
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