Recent Advances in Bulk Crystal Growth

MRS Bulletin ◽  
2009 ◽  
Vol 34 (4) ◽  
pp. 239-244 ◽  
Author(s):  
Roberto Fornari ◽  
Michael Roth
Keyword(s):  
Crystal Growth ◽  
Materials Science ◽  
Thermodynamic Characteristics ◽  
Practical Implementation ◽  
High Melting ◽  
Light Emitting ◽  
Crystalline Materials ◽  
Bulk Crystal Growth ◽  
Introductory Article ◽  
Technological Advances

AbstractThe growth of high-quality single crystals remains a challenging endeavor of materials science. Crystals of suitable size (from fiber crystals with diameters of tens of micrometers up to crystalline ingots or blocks with volumes up to 1 m3) and perfection (free from precipitates, inclusions, and twins with good uniformity and low concentration of dislocations) are required for fundamental research and practical implementation in microelectronic circuits, electro-optic switches and modulators, solid-state lasers, light-emitting diodes, sensors, and many other devices. In this introductory article of this issue of MRS Bulletin, we describe the two main challenges of today's crystal growth, namely (1) the production of well-established crystalline materials with improved structural perfection and larger size at a lower cost and (2) the bulk growth of new categories of materials with extreme thermodynamic characteristics, such as a very high melting point, high melting dissociation pressure, incongruent phase diagram, and anisotropic segregation. The subsequent six articles provide examples of how the crystal growers took up these challenges, which led to new experimental approaches and technological advances.

TEM and cathodoluminescence of precipitates in II-VI semiconductors

1988 ◽  
Vol 46 ◽  
pp. 488-489
Author(s):  
Joanna L. Batstone
Keyword(s):  
Crystal Growth ◽  
Band Gap ◽  
Local Strain ◽  
Wide Band ◽  
Optoelectronic Device ◽  
Wide Band Gap ◽  
Bulk Crystal Growth ◽  
Transmission Electron ◽  
Device Applications ◽  
Stoichiometry Control

Interest in II-VI semiconductors centres around optoelectronic device applications. The wide band gap II-VI semiconductors such as ZnS, ZnSe and ZnTe have been used in lasers and electroluminescent displays yielding room temperature blue luminescence. The narrow gap II-VI semiconductors such as CdTe and HgxCd1-x Te are currently used for infrared detectors, where the band gap can be varied continuously by changing the alloy composition x.Two major sources of precipitation can be identified in II-VI materials; (i) dopant introduction leading to local variations in concentration and subsequent precipitation and (ii) Te precipitation in ZnTe, CdTe and HgCdTe due to native point defects which arise from problems associated with stoichiometry control during crystal growth. Precipitation is observed in both bulk crystal growth and epitaxial growth and is frequently associated with segregation and precipitation at dislocations and grain boundaries. Precipitation has been observed using transmission electron microscopy (TEM) which is sensitive to local strain fields around inclusions.

scholarly journals Dopants Modulate Crystal Growth in Molten Salts Enabled by Surface Energy Tuning

2021 ◽  
Author(s):  
Xiaoqiao Li ◽  
Linming Zhou ◽  
Han Wang ◽  
Dechao Meng ◽  
Guannan Qian ◽  
...  
Keyword(s):  
Crystal Growth ◽  
High Temperature ◽  
Surface Energy ◽  
Molten Salts ◽  
Rational Approach ◽  
Temperature Synthesis ◽  
Crystalline Materials ◽  
Size Dependent ◽  
High Temperature Synthesis ◽  
Energy Tuning

Crystalline materials are routinely produced via high-temperature synthesis and show size-dependent properties; however, a rational approach to regulating their crystal growth has not been established. Here we show that dopants...

scholarly journals Implantable Optrode Array for Optogenetic Modulation and Electrical Neural Recording

Micromachines ◽  
2021 ◽  
Vol 12 (6) ◽  
pp. 725
Author(s):  
Saeyeong Jeon ◽  
Youjin Lee ◽  
Daeho Ryu ◽  
Yoon Kyung Cho ◽  
Yena Lee ◽  
...  
Keyword(s):  
Light Emitting Diode ◽  
Neural Recording ◽  
Electrophysiological Recording ◽  
Light Emitting ◽  
Technological Advances ◽  
Neuroscience Research ◽  
Cell Type Specific ◽  
Novel Design

During the last decade, optogenetics has become an essential tool for neuroscience research due to its unrivaled feature of cell-type-specific neuromodulation. There have been several technological advances in light delivery devices. Among them, the combination of optogenetics and electrophysiology provides an opportunity for facilitating optogenetic approaches. In this study, a novel design of an optrode array was proposed for realizing optical modulation and electrophysiological recording. A 4 × 4 optrode array and five-channel recording electrodes were assembled as a disposable part, while a reusable part comprised an LED (light-emitting diode) source and a power line. After the characterization of the intensity of the light delivered at the fiber tips, in vivo animal experiment was performed with transgenic mice expressing channelrhodopsin, showing the effectiveness of optical activation and neural recording.

scholarly journals The genomics of adaptation

2012 ◽  
Vol 279 (1749) ◽  
pp. 5024-5028 ◽  
Author(s):  
Jacek Radwan ◽  
Wiesław Babik
Keyword(s):  
Genetic Variation ◽  
Natural Selection ◽  
Royal Society ◽  
Genetic Basis ◽  
Genomic Data ◽  
Evolutionary Change ◽  
Introductory Article ◽  
Technological Advances ◽  
A Genome ◽  
Genome Level

The amount and nature of genetic variation available to natural selection affect the rate, course and outcome of evolution. Consequently, the study of the genetic basis of adaptive evolutionary change has occupied biologists for decades, but progress has been hampered by the lack of resolution and the absence of a genome-level perspective. Technological advances in recent years should now allow us to answer many long-standing questions about the nature of adaptation. The data gathered so far are beginning to challenge some widespread views of the way in which natural selection operates at the genomic level. Papers in this Special Feature of Proceedings of the Royal Society B illustrate various aspects of the broad field of adaptation genomics. This introductory article sets up a context and, on the basis of a few selected examples, discusses how genomic data can advance our understanding of the process of adaptation.

Three-Dimensional Computations of Transport and Growth for Crystal Growth Systems

2000 ◽  
Author(s):  
Jeffrey J. Derby ◽  
Andrew Yeckel
Keyword(s):  
Finite Element ◽  
Crystal Growth ◽  
Finite Element Methods ◽  
Three Dimensional ◽  
Bulk Crystal ◽  
Time Dependent ◽  
Engineering Systems ◽  
Bulk Crystal Growth ◽  
Strongly Nonlinear ◽  
Parallel Supercomputers

Abstract Modern finite element methods implemented on parallel supercomputers promise to allow the study of three-dimensional, time-dependent continuum phenomena in many engineering systems. This paper shows several examples of the fruitful application of these approaches to bulk crystal growth systems, where strongly nonlinear coupled phenomena are important.

Electronic, Ionic, and Mixed Conduction in Polymeric Systems

2021 ◽  
Vol 51 (1) ◽  
Author(s):  
Elayne M. Thomas ◽  
Phong H. Nguyen ◽  
Seamus D. Jones ◽  
Michael L. Chabinyc ◽  
Rachel A. Segalman
Keyword(s):  
Materials Science ◽  
Transport Coefficients ◽  
Polymeric Materials ◽  
Annual Review ◽  
Publication Date ◽  
Energy Storage Devices ◽  
Polymeric Systems ◽  
Storage Devices ◽  
Technological Advances ◽  
Performance Benchmark

Polymers that simultaneously transport electrons and ions are paramount to drive the technological advances necessary for next-generation electrochemical devices, including energy storage devices and bioelectronics. However, efforts to describe the motion of ions or electrons separately within polymeric systems become inaccurate when both species are present. Herein, we highlight the basic transport equations necessary to rationalize mixed transport and the multiscale materials properties that influence their transport coefficients. Potential figures of merit that enable a suitable performance benchmark in mixed conducting systems independent of end application are discussed. Practical design and implementation of mixed conducting polymers require an understanding of the evolving nature of structure and transport with ionic and electronic carrier density to capture the dynamic disorder inherent in polymeric materials. Expected final online publication date for the Annual Review of Materials Science, Volume 51 is July 2021. Please see http://www.annualreviews.org/page/journal/pubdates for revised estimates.

Erratum to “Modeling of facet formation in SiC bulk crystal growth” [CRYS 266 (2004) 313]

2004 ◽  
Vol 268 (1-2) ◽  
pp. 328 ◽  
Author(s):  
I.D Matukov ◽  
D.S Kalinin ◽  
M.V Bogdanov ◽  
S.Yu Karpov ◽  
D.Kh Ofengeim ◽  
...  
Keyword(s):  
Crystal Growth ◽  
Bulk Crystal ◽  
Bulk Crystal Growth ◽  
Facet Formation

Modeling and bulk crystal growth processes: What is to be learned?

2010 ◽  
Author(s):  
Jeffrey J. Derby ◽  
W. Wang ◽  
Katsuo Tsukamoto ◽  
Di Wu
Keyword(s):  
Crystal Growth ◽  
Bulk Crystal ◽  
Growth Processes ◽  
Bulk Crystal Growth
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