Array of silicon field effect transistors to detect charges propagation in neurons circuit

2011 ◽  
Vol 1350 ◽  
Author(s):  
C. Delacour ◽  
G. Bugnicourt ◽  
G. Bres ◽  
T. Crozes ◽  
C. Villard
Keyword(s):  
Nervous System ◽  
Electrolyte Solution ◽  
Silicon Nanowires ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Silicon Nanowire ◽  
Network Architectures ◽  
Biological Objects ◽  
Efficient Detection ◽  
Soi Substrates

ABSTRACTWe present transport properties of silicon nanowires field effect transistors realized on SOI substrates and their application to probe electrical activity of biological objects. Devices are sensitive to short and weak voltage pulses (ms, mV) applied in an electrolyte solution, allowing a future efficient detection of neuronal activity. For that purpose, the organized growth of neuronal cells along chosen patterns has been obtained, leading to an accurate coupling with silicon nanowire field effect transistors. Both network architectures, neural and semiconducting, have been designed to study some aspects of the propagation and the processing of information by the nervous system.

Field-Effect Transistors Based on Silicon Nanowire Arrays: Effect of the Good and the Bad Silicon Nanowires

2012 ◽  
Vol 4 (8) ◽  
pp. 4251-4258 ◽  
Author(s):  
Bin Wang ◽  
Thomas Stelzner ◽  
Rawi Dirawi ◽  
Ossama Assad ◽  
Nisreen Shehada ◽  
...  
Keyword(s):  
Silicon Nanowires ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Silicon Nanowire ◽  
Nanowire Arrays ◽  
Silicon Nanowire Arrays

ELECTRICAL CHARACTERIZATION OF PLANAR SILICON NANOWIRE FIELD-EFFECT TRANSISTORS

2012 ◽  
Vol 11 (04) ◽  
pp. 1240011
Author(s):  
G. ROSAZ ◽  
B. SALEM ◽  
N. PAUC ◽  
P. GENTILE ◽  
A. POTIÉ ◽  
...  
Keyword(s):  
Silicon Nanowires ◽  
Field Effect ◽  
High Performance ◽  
Field Effect Transistors ◽  
Silicon Nanowire ◽  
Electrical Characterization ◽  
Hysteretic Behavior ◽  
Oxide Shell ◽  
Back Gate ◽  
Voltage Sweep

Silicon nanowires (Si NWs) are promising candidates for field-effect transistor (FET) conduction channel. Planar configuration using a back gate is an easy way to study these devices. We demonstrate the possibility to build high performance FET using a simple silicidation process leading to high effective holes' mobility between 130 cm2⋅V-1⋅s-1 and 200 cm2⋅V-1⋅s-1 and good ION/IOFF ratio up to 105. Moreover we investigated the possibility to passivate the NWs using either a high-k dielectric layer or a thermal oxide shell around the NWs. This leads to a reduction of the hysteretic behavior during the gate voltage sweep from 30 V to 1 V depending on the material and the gate configuration.

Diffusion Instability and Tapering of Nickel Silicide Intrusions in Silicon Nanowires

2012 ◽  
Vol 1408 ◽  
Author(s):  
Alex Katsman ◽  
Michael Beregovsky ◽  
Yuval E. Yaish
Keyword(s):  
Thermal Annealing ◽  
Silicon Nanowires ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Silicon Nanowire ◽  
Nickel Silicide ◽  
Simultaneous Formation ◽  
Thermally Activated ◽  
Diffusion Instability ◽  
Nickel Silicides

ABSTRACTThermally activated axial intrusion of nickel silicides into the silicon nanowire (NW) from pre-patterned Ni reservoirs is used in formation of nickel silicide/silicon contacts in SiNW field effect transistors. This intrusion consists usually of different nickel silicide phases which grow simultaneously during thermal annealing (TA). The growth is often accompanied by local thickening and tapering of the NW, up to full disintegration of segments adjacent to the silicon. In the present work this process was investigated in SiNWs of 30-60 nm in diameters with pre-patterned Ni electrodes after a TA at 420-440°C and times up to 15 s. The process was analyzed in the framework of a model taking into account simultaneous formation of two silicide phases in the NW. Additional flux of atoms caused by the NW curvature gradients due to different radii of different silicides was taken into account as well. For a certain set of parameters thickening of the nickel-rich silicide intrusion and tapering of the monosilicide part of intrusion were obtained.

scholarly journals Neuron-gated silicon nanowire field effect transistors to follow single spike propagation within neuronal network

2020 ◽  
Author(s):  
C. Delacour ◽  
F. Veliev ◽  
T. Crozes ◽  
G. Bres ◽  
J. Minet ◽  
...  
Keyword(s):  
Silicon Nanowires ◽  
Hippocampal Neurons ◽  
Field Effect ◽  
Multiple Scales ◽  
Field Effect Transistors ◽  
Ex Vivo ◽  
Silicon Nanowire ◽  
Field Potential ◽  
Top Down ◽  
Micro Patterning

ABSTRACTSilicon nanowire field effect transistors SiNW-FETs provide a local probe for sensing neuronal activity at the subcellular scale, thanks to their nanometer size and ultrahigh sensitivity. The combination with micro-patterning or microfluidic techniques to build model neurons networks above SiNW arrays could allow monitoring spike propagation and tailor specific stimulations, being useful to investigate network communications at multiple scales, such as plasticity or computing processes. This versatile device could be useful in many research areas, including diagnosis, prosthesis, and health security. Using top-down silicon nanowires-based array, we show here the ability to record electrical signals from matured neurons with top-down silicon nanowires, such as local field potential and unitary spike within ex-vivo preparations and hippocampal neurons grown on chip respectively. Furthermore, we demonstrate the ability to guide neurites above the sensors array during 3 weeks of cultures and follow propagation of spikes along cells. Silicon nanowire field effect transistors are obtained by top-down approach with CMOS compatible technology, showing the possibility to implement them at manufacturing level. These results confirm further the potentiality of the approach to follow spike propagation over large distances and at precise location along neuronal cells, by providing a multiscale addressing at the nano and mesoscales.

Effect of Metal - Silicon Nanowire Contacts on the Performance of Accumulation Metal Oxide Semiconductor Field Effect Transistor

2008 ◽  
Vol 1144 ◽  
Author(s):  
Pranav Garg ◽  
Yi Hong ◽  
Md. Mash-Hud Iqbal ◽  
Stephen J. Fonash
Keyword(s):  
Metal Oxide ◽  
Silicon Nanowires ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Silicon Nanowire ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Manufacturing Cost ◽  
Effect Transistor ◽  
The Impact

ABSTRACTRecently, we have experimentally demonstrated a very simply structured unipolar accumulation-type metal oxide semiconductor field effect transistor (AMOSFET) using grow-in-place silicon nanowires. The AMOSFET consists of a single doping type nanowire, metal source and drain contacts which are separated by a partially gated region. Despite its simple configuration, it is capable of high performance thereby offering the potential of a low manufacturing-cost transistor. Since the quality of the metal/semiconductor ohmic source and drain contacts impacts AMOSFET performance, we repot here on initial exploration of contact variations and of the impact of thermal process history. With process optimization, current on/off ratios of 106 and subthreshold swings of 70 mV/dec have been achieved with these simple devices

Vertical surround-gated silicon nanowire impact ionization field-effect transistors

2007 ◽  
Vol 90 (14) ◽  
pp. 142110 ◽  
Author(s):  
M. T. Björk ◽  
O. Hayden ◽  
H. Schmid ◽  
H. Riel ◽  
W. Riess
Keyword(s):  
Field Effect ◽  
Impact Ionization ◽  
Field Effect Transistors ◽  
Silicon Nanowire

scholarly journals Biologically sensitive field-effect transistors: from ISFETs to NanoFETs

2016 ◽  
Vol 60 (1) ◽  
pp. 81-90 ◽  
Author(s):  
Vivek Pachauri ◽  
Sven Ingebrandt
Keyword(s):  
Field Effect ◽  
Gate Dielectric ◽  
Gate Dielectrics ◽  
Field Effect Transistors ◽  
Silicon Nanowire ◽  
Label Free ◽  
Biomolecular Detection ◽  
New Device ◽  
Label Free Detection ◽  
History Of

Biologically sensitive field-effect transistors (BioFETs) are one of the most abundant classes of electronic sensors for biomolecular detection. Most of the time these sensors are realized as classical ion-sensitive field-effect transistors (ISFETs) having non-metallized gate dielectrics facing an electrolyte solution. In ISFETs, a semiconductor material is used as the active transducer element covered by a gate dielectric layer which is electronically sensitive to the (bio-)chemical changes that occur on its surface. This review will provide a brief overview of the history of ISFET biosensors with general operation concepts and sensing mechanisms. We also discuss silicon nanowire-based ISFETs (SiNW FETs) as the modern nanoscale version of classical ISFETs, as well as strategies to functionalize them with biologically sensitive layers. We include in our discussion other ISFET types based on nanomaterials such as carbon nanotubes, metal oxides and so on. The latest examples of highly sensitive label-free detection of deoxyribonucleic acid (DNA) molecules using SiNW FETs and single-cell recordings for drug screening and other applications of ISFETs will be highlighted. Finally, we suggest new device platforms and newly developed, miniaturized read-out tools with multichannel potentiometric and impedimetric measurement capabilities for future biomedical applications.

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