Growth of CuO and CuGaO2 Thin Films by Spin-coating Method

2011 ◽  
Vol 1315 ◽  
Author(s):  
Afishah Alias ◽  
Masato Sakamoto ◽  
Katsuhiro Uesugi

ABSTRACTCuO and CuGaO2 thin films have been grown on Si (100) substrates using a sol-gel spincoating method. CuO films were successfully fabricated by the annealing around 700°C. At higher temperatures (>800°C), pyramidal CuO islands with 1~2μm in width and 0.4~0.8μm in height were observed. They arranged structures as a straight line parallel to the <110> and <010> directions, which suggests the self-organized growth of CuO pyramidal islands. Delafossite CuGaO2 films were fabricated as well, using Cu-Ga-O mixed solutions with Ga/(Cu+Ga) atomic ratio of 0.5. These results indicate that Cu-based compounds were fabricated by the sol-gel spincoating method.


Author(s):  
Ibrahim Mohd Yazid ◽  
Muhammad Hazim Raselan ◽  
Shafinaz Sobihana Shariffudin ◽  
Puteri Sarah Mohamad Saad ◽  
Sukreen Hana ◽  
...  


2020 ◽  
Author(s):  
A. Amali Roselin ◽  
N. Anandhan ◽  
I. Joseph Paneer Doss ◽  
G. Gopu ◽  
K. P. Ganesan ◽  
...  




Author(s):  
Ştefan Ţălu ◽  
Samah Boudour ◽  
Idris Bouchama ◽  
Bandar Astinchap ◽  
Hamta Ghanbaripour ◽  
...  


2008 ◽  
Vol 368-372 ◽  
pp. 1817-1819
Author(s):  
Cui Hua Zhao ◽  
Bo Ping Zhang ◽  
Yong Liu ◽  
Song Jie Li

LixTixNi1-2xO (x =0, 10 and 20 at. %) thin films with 200 nm in thickness were deposited on Pt/Ti/SiO2/Si (100) by a sol-gel spin-coating method. All samples have a uniform microstructure. The grain sizes grew from 100 nm to 300 nm by co-doping Li and Ti. The LiTiNiO thin films consist of NiO, NiTiO3 and Li2NiO2, while the Li-free thin films consist of NiO, NiTiO3 and NiTi0.99O3. The dielectric properties of the LiTiNiO thin films improved obviously by co-doping Li and Ti, but excess Li increases the amount of Li2NiO2 phase and decreases the dielectric properties. The dielectric constants at 100 Hz for the Li0.1Ti0.1Ni0.8O and Li0.2Ti0.2Ni0.6O thin films are 506 and 388 respectively. Appropriate co-doping contents of Li and Ti are important to obtain a high dielectric property.



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